FCAB21350L1

Doc No. TT4-EA-15075 Revision. 1 Product Standards MOS FET FCAB21350L1 FCAB21350L1 Gate resistor installed Dual N-channel MOS FET 3.05 For lithium-ion secondary battery protection circuits Unit: mm 5 4 1 2 3 1.77 6  Features  Low source-source ON resistance:Rss(on) typ. = 2.2 mW（VGS = 3.8 V)  CSP(Chip Size Package)  RoHS compliant (EU RoHS / MSL:Level 1 compliant) Φ0.25 0.11 0.80  Marking Symbol: 3M (R0.175) 0.35 1.005  Packaging Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard) 0.8775 (0.485) 0.8775 1. Source1-1 (FET1) 2. Gate1 (FET1) 3. Source1-2 (FET1)  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Source-source Voltage Gate-source Voltage Source Current Total Power Dissipation DC *1 DC *2 Pulse *3 DC *1 DC *2 Channel Temperature Storage Temperature Range Thermal Resistance (ch-a) Note DC *1 DC *2 VSS VGS IS1 IS2 ISp PD1 PD2 Tch Tstg Rth1 Rth2 Rating Unit 12 8 12 27 120 0.45 2.1 150 -55 to +150 278 59 V V A A A W W C C C/W C/W *1 Mounted on FR4 board ( 25.4 mm  25.4 mm  t1.0 mm ) using the minimum recommended pad size (36mm Copper ). *2 Mounted on Ceramic substrate (70 mm  70 mm  t1.0 mm). *3 t = 10 ms, Duty Cycle  1 % Panasonic JEITA Code (0.6475) 4. Source2-1 (FET2) 5. Gate2 (FET2) 6. Source2-2 (FET2) TCSP1831011-N1 — — Equivalent circuit FET2 FET1 Page 1 of 5 Established : 2015-10-23 Revised : ####-##-## Doc No. TT4-EA-15075 Revision. 1 Product Standards MOS FET FCAB21350L1  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Source-source Breakdown Voltage Zero Gate Voltage Source Current VSSS ISSS Gate-source Leakage Current IGSS Gate-source Threshold Voltage Source-source On-state Resistance Body Diode Forward Voltage Input Capacitance *1 Output Capacitance *1 Reverse Transfer Capacitance Turn-on delay Time *1,*2 Rise Time *1,*2 Turn-off delay Time *1,*2 Fall Time *1,*2 Total Gate Charge *1 Gate-source Charge *1 Gate-drain Charge *1 Note *1 Vth RSS(on)1 RSS(on)2 RSS(on)3 RSS(on)4 VF(s-s) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Conditions Min IS = 1 mA, VGS = 0 V VSS = 12 V, VGS = 0 V VGS = 8 V, VSS = 0 V VGS = 5 V, VSS = 0 V IS = 1.41 mA, VSS = 10 V IS = 6.0 A, VGS = 4.5 V IS = 6.0 A, VGS = 3.8 V IS = 6.0 A, VGS = 3.1 V IS = 6.0 A, VGS = 2.5 V IF = 6.0 A, VGS = 0 V Typ Max Unit 12 0.35 0.90 1.55 2.1 1.6 2.2 1.65 2.4 1.9 3.1 0.8 4650 VSS = 10 V, VGS = 0 V, f = 1 KHz 580 530 1.2 VDD = 8 V, VGS = 0 to 4.0 V 2.3 IS = 6.0 A 9 VDD = 8 V, VGS = 4.0 to 0 V 5.0 IS = 6.0 A 43 VDD = 8 V 10 VGS = 0 to 4.0 V, IS = 6.0 A 10 1.0 10 1.0 1.40 2.75 2.85 3.95 6.1 1.2 V mA mA V mW V pF ms ms nC Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Guaranteed by design, not subject to production testing *2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time Note2 : Measurement circuit VDD = 8 V IS = 6.0 A RL = 1.33W Vout S2 90 % Vin 10 % Rg G2 90 % G1 Rg 10 % Vin 4V 90 % Vout 10 % 50 W 0V PW = 10 ms D.C.  1 % S1 td(on) tr td(off) tf Page 2 of 5 Established : 2015-10-23 Revised : ####-##-## Doc No. TT4-EA-15075 Revision. 1 Product Standards MOS FET FCAB21350L1 Technical Data ( reference ) IS - VSS RSS(on) - IS 4 Source-source ON-state Resistance RSS (on) ( mW ) 14 VGS = 4.5 V Source Current IS ( A ) 12 10 3.8 V 8 3.1 V 6 2.5 V 4 2 ※Pulse measurement 0 0 0.05 3.5 3 2.5 2 1.5 ※Pulse measurement 1 0.1 1 2 IS - VGS 5 6 RSS(on) - VGS 10 Source-source ON-state Resistance RSS (on) ( mW ) 12 1 0.1 ※Pulse measurement 0.01 0.5 1 IS = 6.0 A 10 8 6 4 Ta = 85 C 2 -40 C ※Pulse measurement 25 C 0 1 1.5 1.5 2 2.5 3 3.5 4 Gate-source Voltage VGS ( V ) Gate-source Voltage VGS ( V ) IF - VF IGS - VGS 10 Ta = 85 C 1 25 C 0.1 -40 C ※Pulse measurement 0.01 Gate-source Leakage Current IGS ( A ) Source Current IS ( A ) 4 Source Current IS (A) Source-source Voltage VSS (V) Diode Forward Current IF ( A ) 3 4.5 5 1.E-02 Ta = 85 C 1.E-04 25 C 1.E-06 -40 C 1.E-08 ※Pulse measurement 1.E-10 0 0.2 0.4 0.6 0.8 Body Diode Forward Voltage VF ( V ) 1 0 5 10 15 Gate-source Voltage VGS (V) Page 3 of 5 Established : 2015-10-23 Revised : ####-##-## Doc No. TT4-EA-15075 Revision. 1 Product Standards MOS FET Technical Data ( reference ) ISS - VSS Dynamic Input/Output Characteristics 1.E-03 1.E-04 1.E-05 Ta = 85 C 1.E-06 1.E-07 25 C 1.E-08 1.E-09 5.0 Gate - source Voltage VGS ( V ) Zero Gate Voltage Source Current ISS ( A ) FCAB21350L1 -40 C 4.0 3.0 2.0 1.0 0.0 1.E-10 0 5 10 15 VDD = 8 V IS = 6.0A 0 20 10 Source-source Voltage VSS ( V ) 40 50 60 70 Safe Operating Area 1000 1000 limited by RDS(on) （VGS = 3.8 V） 100 10 1 Ta = 25 C, Mounted on FR4 board ( 25.4 mm ͯ 25.4 mm ͯ t1.0 mm ) using the minimum recommended pad size (36mm Copper ). 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width tsw ( s ) Source Current IS ( A ) Thermal Resistance Rth ( C/W ) 30 Gate Charge ( nC ) Rth - tsw Normalized Effective Transient Thermal Impedance 20 100 PW = 10 ms 500 ms 1 ms 10 3 ms 11 ms 1 DC Ta = 25 C, Mounted on FR4 board ( 25.4 mm ͯ 25.4 mm ͯ t1.0 mm ) using the minimum recommended pad size (36mm Copper ). 0.1 0.01 0.1 1 100 ms 1s 10 100 Source-source Voltage VSS ( V ) Thermal Response 10 1 Ta = 25 C, Mounted on FR4 board ( 25.4 mm ͯ 25.4 mm ͯ t1.0 mm ) using the minimum recommended pad size (36mm Copper ). Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration ( s ) Page 4 of 5 Established : 2015-10-23 Revised : ####-##-## Doc No. TT4-EA-15075 Revision. 1 Product Standards MOS FET FCAB21350L1  Outline (TCSP1831011-N1)  Land Pattern (Reference) Unit: mm Unit: mm Page 5 of 5 Established : 2015-10-23 Revised : ####-##-## Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. 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