Doc No. TT4-EA-15073
Revision. 1
Product Standards
MOS FET
FCAB22370L1
FCAB22370L1
Gate resistor installed Dual N-channel MOS FET
3.05
For lithium-ion secondary battery protection circuits
Unit: mm
5
4
1
2
3
1.77
6
Features
Low source-source ON resistance:Rss(on) typ. = 3.3 mW(VGS = 3.8 V)
CSP(Chip Size Package)
RoHS compliant (EU RoHS / MSL:Level 1 compliant)
Φ0.25
0.11
0.80
Marking Symbol: 3P
(R0.175)
0.35
1.005
Packaging
Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard)
0.8775
(0.485)
0.8775
1. Source1-1 (FET1)
2. Gate1 (FET1)
3. Source1-2 (FET1)
Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Source-source Voltage
Gate-source Voltage
Source Current (DC) *1
Source Current (Pulsed) *1,*2
Total Power Dissipation *1
Channel Temperature
Storage Temperature Range
Thermal Resistance (ch-a)
Note
Rating
VSS
20
VGS
12
IS
10
ISp
100
PD
0.45
Tch
150
Tstg
-55 to +150
Rth(ch-a)
278
*1 Mounted on FR4 board ( 25.4 mm 25.4 mm t1.0 mm )
using the minimum recommended pad size (36mm Copper ).
*2 t = 10 ms, Duty Cycle 1 %
Unit
V
V
A
A
W
C
C
C/W
Panasonic
JEITA
Code
(0.6475)
4. Source2-1 (FET2)
5. Gate2 (FET2)
6. Source2-2 (FET2)
TCSP1831011-N1
—
—
Equivalent circuit
4,6(S2)
5(G2)
1,3(S1)
2(G1)
FET2
FET1
Page 1 of 5
Established : 2015-10-23
Revised
: ####-##-##
Doc No. TT4-EA-15073
Revision. 1
Product Standards
MOS FET
FCAB22370L1
Electrical Characteristics Ta = 25 C 3 C
Parameter
Symbol
Source-source Breakdown Voltage
Zero Gate Voltage Source Current
VSSS
ISSS
Gate-source Leakage Current
IGSS
Gate-source Threshold Voltage
Source-source On-state Resistance
Body Diode Forward Voltage
Input Capacitance *1
Output Capacitance *1
Reverse Transfer Capacitance
Turn-on delay Time *1,*2
Rise Time *1,*2
Turn-off delay Time *1,*2
Fall Time *1,*2
Total Gate Charge *1
Gate-source Charge *1
Gate-drain Charge *1
Gate Resistance*1
Note
*1
Vth
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
VF(s-s)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Rg
Conditions
Min
Typ
Max
Unit
20
IS = 1 mA, VGS = 0 V
VSS = 20 V, VGS = 0 V
VGS = 8 V, VSS = 0 V
VGS = 5 V, VSS = 0 V
IS = 1.41 mA, VSS = 10 V
IS = 5.0 A, VGS = 4.5 V
IS = 5.0 A, VGS = 3.8 V
IS = 5.0 A, VGS = 3.1 V
IS = 5.0 A, VGS = 2.5 V
IF = 5.0 A, VGS = 0 V
0.35
2.1
2.2
2.4
2.6
VSS = 10 V, VGS = 0 V, f = 1 kHz
VDD = 10 V, VGS = 0 to 4.0 V
IS = 5.0 A
VDD = 10 V, VGS = 4.0 to 0 V
IS = 5.0 A
VDD = 10 V
VGS = 0 to 4.0 V,
IS = 5.0 A
f = 1 kHz
400
1.0
10
1.0
1.4
4.2
4.3
6.0
9.0
1.2
0.90
3.1
3.3
3.8
4.6
0.8
3700
380
340
0.9
2.0
6
3.7
33
11
9
700 1000
V
mA
mA
V
mW
V
pF
ms
ms
nC
W
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Guaranteed by design, not subject to production testing
*2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
Note2 : Measurement circuit
VDD = 10 V
IS = 5.0 A
RL = 2W
Vout
S2
90 %
Vin
10 %
Rg
G2
90 %
G1
Rg
10 %
Vin
4V
90 %
Vout
10 %
50 W
0V
PW = 10 ms
D.C. 1 %
S1
td(on) tr
td(off) tf
Page 2 of 5
Established : 2015-10-23
Revised
: ####-##-##
Doc No. TT4-EA-15073
Revision. 1
Product Standards
MOS FET
FCAB22370L1
Technical Data ( reference )
IS - VSS
RSS(on) - IS
Source-source ON-state Resistance
RSS (on) ( mW )
12
Source Current IS ( A )
VGS = 4.5 V
10
3.8 V
8
3.1 V
6
2.5 V
4
2
※Pulse measurement
0
0
0.05
0.1
5.5
5
4.5
4
3.5
3
2.5
※Pulse measurement
2
1
2
3
IS - VGS
6
RSS(on) - VGS
10
12
Source-source ON-state Resistance
RSS (on) ( mW )
Source Current IS ( A )
5
Source Current IS (A)
Source-source Voltage VSS (V)
1
0.1
※Pulse measurement
0.01
0.5
1
8
6
Ta = 85 C
4
2
※Pulse measurement
-40 C
25 C
0
1.5
2
2.5
3
3.5
4
Gate-source Voltage VGS ( V )
IF - VF
IGS - VGS
Gate-source Leakage Current IGS ( A )
Gate-source Voltage VGS ( V )
※Pulse measurement
Ta = 85 C
1
25 C
0.1
-40 C
0.01
0
IS = 5.0 A
10
1
1.5
10
Diode Forward Current IF ( A )
4
0.2
0.4
0.6
0.8
Body Diode Forward Voltage VF ( V )
1
4.5
5
1.E-04
Ta = 85 C
25 C
1.E-06
-40 C
1.E-08
※Pulse measurement
1.E-10
0
5
10
15
Gate-source Voltage VGS (V)
Page 3 of 5
Established : 2015-10-23
Revised
: ####-##-##
Doc No. TT4-EA-15073
Revision. 1
Product Standards
MOS FET
Technical Data ( reference )
ISS - VSS
Dynamic Input/Output Characteristics
1.E-03
6.0
Gate - source Voltage VGS ( V )
Zero Gate Voltage Source Current ISS ( A )
FCAB22370L1
1.E-04
1.E-05
Ta = 85 C
1.E-06
1.E-07
25 C
1.E-08
1.E-09
-40 C
VDD = 10 V
IS = 5.0A
5.0
4.0
3.0
2.0
1.0
0.0
1.E-10
0
5
10
15
20
25
0
30
Source-source Voltage VSS ( V )
30
40
50
1000
limited by
RSS(on) (VGS = 3.8 V)
PW = 10 ms
100
100
10
1
Ta = 25 C,
Mounted on FR4 board ( 25.4 mm ͯ 25.4 mm ͯ t1.0 mm )
using the minimum recommended pad size (36mm Copper ).
0.1
0.0001 0.001 0.01
60
Safe Operating Area
1000
Source Current IS ( A )
Thermal Resistance Rth ( C/W )
20
Gate Charge ( nC )
Rth - tsw
500 ms
1 ms
10
10 ms
1
100 ms
1s
Ta = 25 C,
Mounted on FR4 board
( 25.4 mm ͯ 25.4 mm ͯ t1.0 mm )
using the minimum recommended
pad size (36mm Copper ).
0.1
DC
0.01
0.1
1
10
100 1000
Pulse Width tsw ( s )
Normalized Effective Transient Thermal Impedance
10
0.1
1
10
100
Source-source Voltage VSS ( V )
Thermal Response
10
1
Ta = 25 C,
Mounted on FR4 board ( 25.4 mm ͯ 25.4 mm ͯ t1.0 mm )
using the minimum recommended pad size (36mm Copper ).
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.0001 0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration ( s )
Page 4 of 5
Established : 2015-10-23
Revised
: ####-##-##
Doc No. TT4-EA-15073
Revision. 1
Product Standards
MOS FET
FCAB22370L1
Outline (TCSP1831011-N1)
Land Pattern (Reference)
Unit: mm
Unit: mm
Page 5 of 5
Established : 2015-10-23
Revised
: ####-##-##
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semiconductors described in this book
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Consult our sales staff in advance for information on the following applications:
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