Doc No. TT4-EA-15073
Revision. 1
Product Standards
MOS FET
FCAB22370L1
FCAB22370L1
Gate resistor installed Dual N-channel MOS FET
3.05
For lithium-ion secondary battery protection circuits
Unit: mm
5
4
1
2
3
1.77
6
Features
Low source-source ON resistance:Rss(on) typ. = 3.3 mW（VGS = 3.8 V)
CSP(Chip Size Package)
RoHS compliant (EU RoHS / MSL:Level 1 compliant)
Φ0.25
0.11
0.80
Marking Symbol: 3P
(R0.175)
0.35
1.005
Packaging
Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard)
0.8775
(0.485)
0.8775
1. Source1-1 (FET1)
2. Gate1 (FET1)
3. Source1-2 (FET1)
Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Source-source Voltage
Gate-source Voltage
Source Current (DC) *1
Source Current (Pulsed) *1,*2
Total Power Dissipation *1
Channel Temperature
Storage Temperature Range
Thermal Resistance (ch-a)
Note
Rating
VSS
20
VGS
12
IS
10
ISp
100
PD
0.45
Tch
150
Tstg
-55 to +150
Rth(ch-a)
278
*1 Mounted on FR4 board ( 25.4 mm 25.4 mm t1.0 mm )
using the minimum recommended pad size (36mm Copper ).
*2 t = 10 ms, Duty Cycle 1 %
Unit
V
V
A
A
W
C
C
C/W
Panasonic
JEITA
Code
(0.6475)
4. Source2-1 (FET2)
5. Gate2 (FET2)
6. Source2-2 (FET2)
TCSP1831011-N1
—
—
Equivalent circuit
4,6(S2)
5(G2)
1,3(S1)
2(G1)
FET2
FET1
Page 1 of 5
Established : 2015-10-23
Revised
: ####-##-##
Doc No. TT4-EA-15073
Revision. 1
Product Standards
MOS FET
FCAB22370L1
Electrical Characteristics Ta = 25 C 3 C
Parameter
Symbol
Source-source Breakdown Voltage
Zero Gate Voltage Source Current
VSSS
ISSS
Gate-source Leakage Current
IGSS
Gate-source Threshold Voltage
Source-source On-state Resistance
Body Diode Forward Voltage
Input Capacitance *1
Output Capacitance *1
Reverse Transfer Capacitance
Turn-on delay Time *1,*2
Rise Time *1,*2
Turn-off delay Time *1,*2
Fall Time *1,*2
Total Gate Charge *1
Gate-source Charge *1
Gate-drain Charge *1
Gate Resistance*1
Note
*1
Vth
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
VF(s-s)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Rg
Conditions
Min
Typ
Max
Unit
20
IS = 1 mA, VGS = 0 V
VSS = 20 V, VGS = 0 V
VGS = 8 V, VSS = 0 V
VGS = 5 V, VSS = 0 V
IS = 1.41 mA, VSS = 10 V
IS = 5.0 A, VGS = 4.5 V
IS = 5.0 A, VGS = 3.8 V
IS = 5.0 A, VGS = 3.1 V
IS = 5.0 A, VGS = 2.5 V
IF = 5.0 A, VGS = 0 V
0.35
2.1
2.2
2.4
2.6
VSS = 10 V, VGS = 0 V, f = 1 kHz
VDD = 10 V, VGS = 0 to 4.0 V
IS = 5.0 A
VDD = 10 V, VGS = 4.0 to 0 V
IS = 5.0 A
VDD = 10 V
VGS = 0 to 4.0 V,
IS = 5.0 A
f = 1 kHz
400
1.0
10
1.0
1.4
4.2
4.3
6.0
9.0
1.2
0.90
3.1
3.3
3.8
4.6
0.8
3700
380
340
0.9
2.0
6
3.7
33
11
9
700 1000
V
mA
mA
V
mW
V
pF
ms
ms
nC
W
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Guaranteed by design, not subject to production testing
*2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
Note2 : Measurement circuit
VDD = 10 V
IS = 5.0 A
RL = 2W
Vout
S2
90 %
Vin
10 %
Rg
G2
90 %
G1
Rg
10 %
Vin
4V
90 %
Vout
10 %
50 W
0V
PW = 10 ms
D.C. 1 %
S1
td(on) tr
td(off) tf
Page 2 of 5
Established : 2015-10-23
Revised
: ####-##-##
Doc No. TT4-EA-15073
Revision. 1
Product Standards
MOS FET
FCAB22370L1
Technical Data ( reference )
IS - VSS
RSS(on) - IS
Source-source ON-state Resistance
RSS (on) ( mW )
12
Source Current IS ( A )
VGS = 4.5 V
10
3.8 V
8
3.1 V
6
2.5 V
4
2
※Pulse measurement
0
0
0.05
0.1
5.5
5
4.5
4
3.5
3
2.5
※Pulse measurement
2
1
2
3
IS - VGS
6
RSS(on) - VGS
10
12
Source-source ON-state Resistance
RSS (on) ( mW )
Source Current IS ( A )
5
Source Current IS (A)
Source-source Voltage VSS (V)
1
0.1
※Pulse measurement
0.01
0.5
1
8
6
Ta = 85 C
4
2
※Pulse measurement
-40 C
25 C
0
1.5
2
2.5
3
3.5
4
Gate-source Voltage VGS ( V )
IF - VF
IGS - VGS
Gate-source Leakage Current IGS ( A )
Gate-source Voltage VGS ( V )
※Pulse measurement
Ta = 85 C
1
25 C
0.1
-40 C
0.01
0
IS = 5.0 A
10
1
1.5
10
Diode Forward Current IF ( A )
4
0.2
0.4
0.6
0.8
Body Diode Forward Voltage VF ( V )
1
4.5
5
1.E-04
Ta = 85 C
25 C
1.E-06
-40 C
1.E-08
※Pulse measurement
1.E-10
0
5
10
15
Gate-source Voltage VGS (V)
Page 3 of 5
Established : 2015-10-23
Revised
: ####-##-##
Doc No. TT4-EA-15073
Revision. 1
Product Standards
MOS FET
Technical Data ( reference )
ISS - VSS
Dynamic Input/Output Characteristics
1.E-03
6.0
Gate - source Voltage VGS ( V )
Zero Gate Voltage Source Current ISS ( A )
FCAB22370L1
1.E-04
1.E-05
Ta = 85 C
1.E-06
1.E-07
25 C
1.E-08
1.E-09
-40 C
VDD = 10 V
IS = 5.0A
5.0
4.0
3.0
2.0
1.0
0.0
1.E-10
0
5
10
15
20
25
0
30
Source-source Voltage VSS ( V )
30
40
50
1000
limited by
RSS(on) （VGS = 3.8 V）
PW = 10 ms
100
100
10
1
Ta = 25 C,
Mounted on FR4 board ( 25.4 mm ͯ 25.4 mm ͯ t1.0 mm )
using the minimum recommended pad size (36mm Copper ).
0.1
0.0001 0.001 0.01
60
Safe Operating Area
1000
Source Current IS ( A )
Thermal Resistance Rth ( C/W )
20
Gate Charge ( nC )
Rth - tsw
500 ms
1 ms
10
10 ms
1
100 ms
1s
Ta = 25 C,
Mounted on FR4 board
( 25.4 mm ͯ 25.4 mm ͯ t1.0 mm )
using the minimum recommended
pad size (36mm Copper ).
0.1
DC
0.01
0.1
1
10
100 1000
Pulse Width tsw ( s )
Normalized Effective Transient Thermal Impedance
10
0.1
1
10
100
Source-source Voltage VSS ( V )
Thermal Response
10
1
Ta = 25 C,
Mounted on FR4 board ( 25.4 mm ͯ 25.4 mm ͯ t1.0 mm )
using the minimum recommended pad size (36mm Copper ).
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.0001 0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration ( s )
Page 4 of 5
Established : 2015-10-23
Revised
: ####-##-##
Doc No. TT4-EA-15073
Revision. 1
Product Standards
MOS FET
FCAB22370L1
Outline (TCSP1831011-N1)
Land Pattern (Reference)
Unit: mm
Unit: mm
Page 5 of 5
Established : 2015-10-23
Revised
: ####-##-##
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
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of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
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equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
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maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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