FJ4B01110L1

Product Standards MOS FET FJ4B01110L1 FJ4B01110L1 Single P-channel MOS FET Unit: mm For Load switching circuits 0.60 3 1 2 0.60 4 TOP  Drain-source ON resistance:Rds(on) typ. = 141 mΩ ( VGS = -2.5 V )  CSP (Chip Size Package)  RoHS compliant (EU RoHS / MSL:Level 1 compliant) 0.10  Features BOTTOM  Packaging 0.30 Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 ºC Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current Power Dissipation Channel Temperature Operating Ambient Temperature Storage Temperature Note *1 *2 *3 *4 VDS VGS ID1*1 ID2*2 ID3*3 IDp1*1*4 IDp2*2*4 IDp3*3*4 PD1*1 PD2*2 PD3*3 Tch Topr Tstg Rating Unit -12 ±8 -1.4 -2.2 -2.6 -11 -17 -20 0.34 0.76 1.1 150 -40 ~ +85 -55 ~ +150 V V A 0.45  Marking Symbol: 1E 0.30 0.15 0.45 1. Gate 2. Drain Panasonic JEITA Code 3. Source 4. Source ALGA004-W-0606-RA01 — —  Internal Connection 2(D) A W °C °C °C 1(G) 3,4(S) FR4 board (25.4mm×25.4mm×t1.0mm)、Min Cu 36mm2 Copper FR4 board (25.4mm×25.4mm×t1.0mm)、Full Cu Ceramic substrate (70mm×70mm×t1.0mm) t = 10 μs, Duty Cycle < 1% Page 1 of 6 Product Standards MOS FET FJ4B01110L1  Electrical Characteristics Ta = 25 ºC ± 3 ºC Parameter Symbol Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Gate Threshold Voltage VDSS IDSS IGSS Vth Drain-Source ON Resistance RDS(on) Input Capacitance *1 Output Capacitance *1 Reverse Transfer Capacitance *1 Turn-on delay time *1,*2 Rise time *1,*2 Turn-off delay time *1,*2 Fall time *1,*2 Total Gate Charge *1 Gate to Source Charge *1 Gate to Drain Miller Charge *1 Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VF(D-S) Note Conditions ID = -1 mA, VGS = 0 VDS = -12 V, VGS = 0 VGS = ±8 V, VDS = 0 V ID = -0.598 mA, VDS =-10 V ID = -0.7 A, VGS = -4.5 V ID = -0.7 A, VGS = -2.5 V ID = -0.2 A, VGS = -1.8 V ID = -0.1 A, VGS = -1.5 V VDS = -10 V VGS = 0 f = 1MHz Min Typ Max Unit -12 -0.3 118 141 169 199 226 62 51 3.8 2.5 30 5.4 3.3 0.55 0.65 -0.7 VDD = -6 V VGS = 0 to -4.5 V ID = -1.0 A VDD = -6 V VGS = -4.5 V ID = -1.0 A IF = -0.2A, VGS = 0V V μA μA V -10 ±10 -1.0 153 183 287 597 mΩ pF ns nC nC nC V -1.2 Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Guaranteed by design, not subject to production testing *2 Measurement circuit for Turn-on delay time / Rise time / Turn-off delay time / Fall time  Electrical State Discharge Characteristics Standard Test Type Symbol Conditions Human body model HBM C = 100 pF, R = 1.5 kΩ AEC-Q101-001 C = 200 pF, R = 0 Ω MM Machine model Class Value H1B >500 to ≦ 1k M1B >50 to ≦ 100 Unit V V Page 2 of 6 Product Standards MOS FET FJ4B01110L1 Note2: Measurement circuit VDD = -6V Vin 0V -4.5 V PW = 10 μs D.C. ≦ 1 % RL = 6 Ω ID = -1A Vout D Vin G 50 Ω S 10 % Vin 90 % 90 % Vout 10 % td(on) tr td(off) tf Page 3 of 6 Product Standards MOS FET FJ4B01110L1 ID - VDS RDS(on) - ID -1.0 1000 Drain source On-resistance RDS (on) (mΩ) - 4.5 V Drain current ID (A) - 2.5 V - 1.8 V -0.5 - 1.5 V VGS = - 1.2 V -0.0 -0.0 -0.1 -0.2 - 1.5 V - 1.8 V - 2.5 V 100 VGS = - 4.5 V 10 -0.3 -0.1 -1.0 Drain current ID( A) Drain-source voltage VDS (V) ID - VGS RDS(on) - VGS Drain-source On-resistance RDS(on) (mΩ) -1.E+00 Drain current ID (A) 125 ºC 85 ºC 25 ºC -1.E-01 - 40 ºC -1.E-02 -0.0 -0.5 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 125 ºC 85 ºC 25 ºC - 40 ºC -0 -1.0 -1 Gate-source voltage VGS (V) -2 -3 -4 -5 -6 -7 -8 Gate-source voltage VGS (V) IF - VF IGS - VGS -1.E+00 -1.E-04 125 ºC 85 ºC 25 ºC -1.E-01 - 40 ºC -1.E-02 -0.0 -0.2 -0.4 -0.6 -0.8 Body Diode Forward Voltage VF (V) -1.0 Gate-source Leakage Current IGS (A) Diode Forward Current IF (A) -10.0 125 ºC -1.E-05 85 ºC -1.E-06 25 ºC -1.E-07 - 40 ºC -1.E-08 -1.E-09 -0 -5 -10 -15 -20 Gate-source voltage VGS (V) Page 4 of 6 Product Standards MOS FET FJ4B01110L1 IDS - VDS Dynamic Input/Output Characteristics Gate to source Voltage VG (V) -4.5 -1.E-04 -1.E-05 125 ºC -1.E-06 -1.E-07 -1.E-08 -1.E-09 -1.E-10 -1.E-11 25 ºC -40 ºC -1.E-12 85 ºC -1.E-13 -0 -4.0 -3.5 -3.0 VDD = - 6 V -2.5 - 12 V -2.0 -1.5 -1.0 -0.5 -0.0 0 -5 -10 -15 -20 Drain-source Voltage VDS ( V ) Rth - tsw 1 2 3 Total Gate Charge Qg (nC) 4 Safe Operating Area -1.E+02 1000 Min Cu 36mm2 Copper. IDP=-11A 100 Drain current ID (A) Thermal resistance Rth (ºC / W) Zero Gate Voltage Drain Current IDS ( A ) -1.E-03 Full Cu 10 Ta=25ºC, Mounted on FR4 board (25.4mm×25.4mm×t1.0mm). 1 0.001 0.01 0.1 1 10 Pulse Width tsw (s) 100 1000 10us -1.E+01 Limited by RDS(on)(VGS=-4.5V) -1.E+00 1ms -1.E-01 -1.E-02 -1.E-02 Ta=25ºC, Mounted on FR4 board (25.4mm×25.4mm×t1.0mm). using the minimum recommendedpad size (Cu area=47mm2 including traces). -1.E-01 -1.E+00 10ms 100ms 1s DC -1.E+01 -1.E+02 Drain-source Voltage VDS (V) Page 5 of 6 Product Standards MOS FET FJ4B01110L1  ALGA004-W-0606-RA01 Unit: mm 0.60±0.03 3 1 2 0.10±0.02 0.60±0.03 4 0.45 0.30 Φ0.15±0.03 0.30 0.45  Land Pattern (Reference) Page 6 of 6