FJ4B01120L1

Product Standards MOS FET FJ4B01120L1 FJ4B01120L1 Single P-channel MOS FET Unit: mm 1.0 ( Top View ) 4 3 1 2 Mark Identifier 0.1  Drain-source On-state Resistance : RDS(on) typ. = 40 mΩ ( VGS = -2.5 V )  CSP( Chip Size Package )  Halogen-free / RoHS compliant ( EU RoHS / UL-94 V-0 / MSL : Level 1 ) 1.0  Features ( Front View )  Marking Symbol : 1F Φ0.25 2 0.5 1 ( Bottom View ) Embossed type ( Thermo-compression sealing ) : 1 000 pcs / reel ( standard ) (0.25) 4 3 (0.25)  Packaging 0.5  Absolute Maximum Ratings Ta = 25 ºC Parameter Symbol Drain-source Voltage Gate-source Voltage DC Drain Current Pulsed *4 Total Power Dissipation Channel Temperature Operating Ambient Temperature Storage Temperature Range Note *1 *2 *3 *4 VDS VGS ID1 *1 ID2 *2 ID3 *3 IDp1 IDp2 IDp3 PD1 *1 PD2 *2 PD3 *3 Tch Topr Tstg Rating Unit -12 ±8 -2.6 -4.2 -5.4 -20 -33 -43 0.37 0.94 1.5 150 -40 to +85 -55 to +150 V V A A A A A A W W W °C °C °C FR4 board (25.4mm×25.4mm×t1.0mm)、Min Cu 36mm2 Copper. FR4 board (25.4mm×25.4mm×t1.0mm)、Full Cu. Ceramic substrate (70mm×70mm×t1.0mm). t = 10 µs, Duty Cycle ≤ 1 % 1. Gate 2. Drain 3. Source 4. Source Panasonic ULGA004-W-1010-RA01 JEITA — Code — Equivalent circuit 2(D) 1(G) 3,4(S) Page 1 of 5 Product Standards MOS FET FJ4B01120L1  Electrical Characteristics Ta = 25 ºC ± 3 ºC Parameter Symbol Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-source Leakage Current Gate-source Threshold Voltage VDSS IDSS IGSS Vth Drain-source On-state Resistance RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Body Diode Forward Voltage Input Capacitance *1 Output Capacitance *1 Reverse Transfer Capacitance *1 *1,*2 Turn-on Delay Time *1,*2 Rise Time Turn-off Delay Time *1,*2 *1,*2 Fall Time Total Gate Charge *1 Gate-source Charge *1 Gate-drain Charge *1 Note VF(s-d) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Conditions ID = -1 mA, VGS = 0 VDS = -12 V, VGS = 0 VGS = ±8 V, VDS = 0 V ID = -2 mA, VDS = -10 V ID = -2 A, VGS = -4.5 V ID = -2 A, VGS = -2.5 V ID = -0.2 A, VGS = -1.8 V ID = -0.1 A, VGS = -1.5 V IF = -0.2 A, VGS = 0 V Min Typ Max Unit -12 -0.3 34 40 48 57 -0.7 814 201 187 6 4 63 46 10.7 1.4 2.1 VDS = -10 V, VGS = 0 V f = 1 MHz VDD = -6 V, VGS = 0 to -4.5 V ID = -1 A VDD = -6 V, VGS = -4.5 to 0 V ID = -1 A VDD = -6 V, VGS = -4.5 V ID = -1 A -1 ±10 -1.0 51 61 85 170 -1.2 V μA μA V mΩ V pF ns nC Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Guaranteed by design, not subject to production testing. *2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time. VDD = -6 V 10 % RL = 6 Ω ID = -1 A Vin 90 % Vout D 90 % Vin 50 Ω G Vout 50 Ω 0V 10 % S -4.5 V PW = 10 µs D.C. ≤ 1 %  Electrical State Discharge Characteristics Standard Test Type Symbol AEC-Q101 td(off) tf td(on) tr Human Body Model Machine Model HBM MM Conditions C = 100 pF, R = 1.5 kΩ C = 200 pF, R = 0 Ω Class Value H1C > 1k to ≤ 2k M2 > 100 to ≤ 200 Unit V V Page 2 of 5 Product Standards MOS FET FJ4B01120L1 Technical Data ( reference ) 2.5 RDS(on) - ID*1 Drain-Source On-state-Resistance RDS(on) ( mΩ ) ID - VDS*1 Ta = 25 °C Drain Current , -ID ( A ) VGS = -4.5 V 2 -2.5 V 1.5 -1.8 V -1.5 V 1 -1.2 V 0.5 0 0.1 0.2 -1.5 V -1.8 V -2.5 V 60 40 20 VGS = -4.5 V 0.5 1 1.5 2 Drain Current , -ID ( A ) ID - VGS*1 RDS(on) - VGS*1 Drain-source On-state Resistance RDS(on) ( mΩ ) Ta = 125 ºC 0.1 0 Drain-source Voltage , -VDS ( V ) VDS = -10 V Drain Current , -ID ( A ) 80 0.3 1 85 ºC 25 ºC -40℃ 0.01 0 0.5 1 2.5 100 ID = -2 A 80 60 85 ºC Ta = 125 ºC 40 20 -40 ºC 25 ºC 0 1.5 0 2 4 6 8 Gate-source Voltage , -VGS ( V ) Gate-source Voltage , -VGS ( V ) IF - VF(s-d)*1 IGS - VGS*1 1 10 1.E-04 Gate-source Leakage Current -IGS ( A ) Diode Forward Current , -IF ( A ) Ta = 25 °C 0 0 Ta = 125 ºC 85 ºC 0.1 25 ºC -40 ºC 0.01 100 Ta = 125 ºC 1.E-05 1.E-06 1.E-07 85 ºC 25 ºC 1.E-08 -40 ºC 1.E-09 1.E-10 VGS = 0 V 1.E-11 0 0.2 0.4 0.6 0.8 1 Body Diode Forward Voltage , -VF(s-d) ( V ) 0 5 10 15 20 Gate-source Voltage , -VGS ( V ) Page 3 of 5 Product Standards MOS FET FJ4B01120L1 Technical Data ( reference ) IDS - VDS*1 Dynamic Input / Output Characteristics 1.E-04 Ta = 125 ºC Gate-source Voltage , -VGS ( V ) Zero Gate Voltage Drain Current -IDS ( A ) 1.E-03 85 ºC 1.E-05 1.E-06 1.E-07 1.E-08 25 ºC 1.E-09 1.E-10 -40 ºC 1.E-11 1.E-12 1.E-13 0 5 10 15 VDD = -6 V , -12 V ID = -1 A VDD = -6 V Ta = 25 °C 4 3 2 -12 V 1 0 20 0 2 4 Drain-source Voltage , -VDS ( V ) Rth - tsw*2*3 8 1 ms Drain Current, -ID ( A ) 10 100 Full Cu 10 Ta = 25 ºC 0.1 1 12 Absolute Maximum Rating Min Cu 36mm2 Copper 1 0.001 0.01 10 Safe Operating Area*2 1000 Thermal Resistance , Rth ( ºC / W ) 6 Gate Charge , Qg ( nC ) 10 100 10 ms 1 100 ms Limited by RDS(on) ( VGS = -4.5 V ) 0.1 DC 1s Ta = 25 ºC 1000 Pulse Width , tsw ( s ) 0.01 0.01 0.1 1 10 Drain-source Voltage , -VDS ( V ) Note *1 Pulse measurement *2 FR4 board (25.4mm×25.4mm×t1.0mm)、Min Cu 36mm2 Copper. *3 FR4 board (25.4mm×25.4mm×t1.0mm)、Full Cu. Page 4 of 5 Product Standards MOS FET FJ4B01120L1  Outline Unit: mm 4 3 1 2 1.0±0.03 1.0±0.03 ( Top View ) 0.1±0.02 Mark Identifier ( Front View ) Φ0.25±0.03 2 4 3 ( Bottom View ) (0.25) 0.5 (0.25) 0.5 1  Land & Stencil Pattern ( Reference ) Unit: mm 0.5 Φ0.25 0.5 Page 5 of 5