Doc No. TT4-EA-14293
Revision. 5
Product Standards
MOS FET
FK3P02110L
FK3P02110L
Unit: mm
Package dimension
Silicon N-channel MOSFET
For Load-switching
1.6
0.2
3
1.8
(0.25)
Features
1
0.3
2
0.7
(0.65)
0.65
2
1
(0.45)
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tin uc
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tin
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dt
yp
Marking Symbol: A1
3
0.3
M
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0.3
e)
Low drain-source ON resistance:RDS(on)typ. = 12.5m （VGS = 2.5 V)
High heat dissipated and ultra-compact package PMCP
RoHS compliant (EU RoHS / MSL:Level 1 compliant)
0.33
Packaging
Embossed type (Thermo-compression sealing) : 7 000 pcs / reel (standard)
1. Source
2. Gate
Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Ta = 25 C, DC *2
Drain current
Ta = 25 C, DC *3
Drain current Ta = 25 C *1 *2
(Pulsed)
Ta = 25 C *1 *3
Total power
Ta = 25 C, DC *2
dissipation
Ta = 25 C, DC *3
Channel temperature
Operating ambient temperature
Storage temperature range
VDS
VGS
ID1
ID2
IDp1
IDp2
PD1
PD2
Tch
Topr
Tstg
Rating
Unit
24
±12
3.0
6.0
9.0
18.0
200
750
150
-40 to +85
-55 to +150
V
V
A
Panasonic
JEITA
Code
PMCP-1816-Z1
―
―
Equivalent circuit, Pin name
A
mW
3. Drain
2
3
Rg
1. Source
2. Gate
3. Drain
°C
Note： *1 t = 10 μs, Duty Cycle < 1%
*2 When mounted on glass epoxy board typeA (Refer to Figure1)
*3 When mounted on glass epoxy board typeB (Refer to Figure2)
Electrical Characteristics Ta = 25 °C ±3 °C
Static Characteristics
Parameter
Symbol
(p
lan
ed
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Dynamicic Characteristics
Parameter
Input capacitance *1
Output capacitance *1
Reverse transfer capacitance
VDSS
IDSS
IGSS
Vth
RDS(on)
Symbol
*1
Ciss
Coss
Crss
Conditions
ID = 1.0 mA, VGS = 0 V
VDS = 24 V, VGS = 0 V
VGS = ±8 V, VDS = 0 V
ID = 1.0 mA, VDS = 10 V
ID = 3.0 A, VGS = 2.5 V
Conditions
VDS = 10 V, VGS = 0 V, f = 1 MHz
Min
1
Typ
Max
Unit
1.0
±10
0.85 1.4
12.5 20.0
V
μA
μA
V
m
Typ
Unit
24
0.4
Min
1500
140
140
Max
pF
Page 1 of 6
Established : 2012-10-25
Revised
: 2013-05-16
Doc No. TT4-EA-14293
Revision. 5
Product Standards
MOS FET
FK3P02110L
Parameter
Symbol
Turn-on delay time *1 *2
Rise time *1 *2
Turn-off delay time *1 *2
Fall time *1 *2
td(on)
tr
td(off)
tf
Conditions
Min
VDD = 10 V, VGS = 0 to 4 V,ID = 3.0 A
VDD = 10 V, VGS = 4 to 0 V,ID = 3.0 A
Typ
0.6
0.9
5.0
2.3
Max
Unit
μs
μs
M
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Note： 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuringmethods for transistors.
2. *1 Assured by design
*2 Refer to figure3, measurement circuit for Turn-on delay time / Rise time / Turn-off delay time / Fall time
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e)
Figure1: Glass epoxy board typeA
Material:FR4, Size:25.4mm x 25.4mm x t 1.0mm, Cu pad:tickness 36m, 25.3mm 2
Cu pad
25.4mm
25.4mm
Figure2: Glass epoxy board typeB
Material:FR4, Size:25.4mm x 25.4mm x t 1.0mm, Cu pad:tickness 36m, 82.0mm 2
(p
lan
ed
Cuパッド
25.4mm
25.4mm
Page 2 of 6
Established : 2012-10-25
Revised
: 2013-05-16
Doc No. TT4-EA-14293
Revision. 5
Product Standards
MOS FET
FK3P02110L
Figure3: Measurement circuit for Turn-on delay time / Rise time / Turn-off delay time / Fall time
VDD = 10 V
ID = 3 A
RL= 3.3
M
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Vin
PW = 10 s
D.C. 1 %
0V
Vout
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D
e)
4V
Rg
G
Vin
S
90 %
Vin
10 %
90 %
lan
ed
90 %
(p
Vout
10 %
td(on)
tr
10 %
td(off)
tf
Page 3 of 6
Established : 2012-10-25
Revised
: 2013-05-16
Doc No. TT4-EA-14293
Revision. 5
Product Standards
MOS FET
FK3P02110L
Technical Data ( reference )
RDS(on) - ID
4.5V
Ta = 25℃
3.8V
3.1V
8
Drain Current ID (A)
2.5V
2.0V
6
VGS = 1.8V
Ta = 25℃
18
VGS = 1.8V
16
2.0V
14
2.5V
12
3.1V
10
8
2
0
0
0.1
0.2
0.3
0.4
0.5
4
2
0
1
2
3
4
6
7
8
9
10
Drain Current
(A)(A)
Drain
currentIDID
ID - VGS
RDS(on) - VGS
50
ID = 3.0A
40
1
Drain Current ID (A)
5
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ON-state
Resistance
an Source-source
Gate Leakage Current IGS (A)
On-state
Resistance
ce Drain-source
de RSS
(on)(mΩ)
(m)
RDS (on)
typ s f
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tin uc
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Drain-source
VDS (V)
Drain-source
voltage
VDS (V)
10
4.5V
3.8V
6
M
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4
20
e)
10
Source-source
ON-state Resistance
Drain-source On-state Resistance
RSS
RDS(on)
(on) (m)
(mΩ)
ID - VDS
30
0.1
85℃
25℃
0.01
20
85℃
10
Ta = -40℃
25℃
0.001
0
0.5
1
1.5
Gate Source
VGS (V)
Gate-source
voltage
VGS (V)
IF - VF
10
Ta = -40℃
0
0
1
2
3
4
5
6
Gate-source
voltage
VGS
Gate-Source
VGS
(V) (V)
IGS - VGS
1.0E-01
1.0E-03
0.1
25℃
1.0E-05
lan
85℃
85℃
1.0E-04
ed
1
(p
Diode Foward Current IF (A)
1.0E-02
1.0E-06
Ta = -40℃
1.0E-07
25℃
1.0E-08
Ta = -40℃
1.0E-09
1.0E-10
0.01
0
0.5
Source-drain
forwardVF
voltage
Source-Drain
(V) VF (V)
1
0
3
6
9
12
15
Gate-Source
VGS
(V) (V)
Gate-source
voltage
VGS
Page 4 of 6
Established : 2012-10-25
Revised
: 2013-05-16
Doc No. TT4-EA-14293
Revision. 5
Product Standards
MOS FET
FK3P02110L
Technical Data ( reference )
Rth - tsw
100
M
Di ain
sc te
on na
tin nc
ue e/
d
Thermal Resistance Rth (°C/W)
1000
M
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tin uc
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d t ife
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, d st
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on e.
tin
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dt
yp
Ta=25℃,
Mounted on FR4 board (25.4×25.4×t1.0mm).
Surface Mounted on FR4 Board using the minimum recommended
pad size(Cu area=82.0mm2 including traces).
1
0.1
0.0001
e)
10
0.001
0.01
0.1
1
10
100
1000
Pulse
Width
Pulse
width
tsw tsw
(s) (s)
Rth - tsw
100
ed
10
Ta=25℃,
Mounted on FR4 board (25.4×25.4×t1.0mm).
Surface Mounted on FR4 Board using the minimum recommended
pad size(Cu area=25.3mm2 including traces).
lan
1
(p
Thermal Resistance Rth (°C/W)
1000
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse
Width
Pulse
width
tsw tsw
(s) (s)
Page 5 of 6
Established : 2012-10-25
Revised
: 2013-05-16
Established : 2012-10-25
Revised
: 2013-05-16
1.025
0.30±0.03
3
2
0.65 (0.45)
Land Pattern (Reference) (Unit: mm)
1.6
1.80±0.05
1.60±0.05
0.20±0.05
3
0.3
(0.25)
PMCP-1816-Z1
e)
M
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typ isc0.33±0.05
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0.30±0.03
int ed
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typ s f
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pla wi
0.25
ne ng
d d fou
isc r P
on rod
tin uc
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d t ife
(0.65)
yp cy
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0.70±0.03
, d st
isc ag
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tin
ue
dt
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1
0.3
0.7
ed
lan
(p
M
Di ain
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Doc No. TT4-EA-14293
Revision. 5
Product Standards
MOS FET
FK3P02110L
Unit: mm
2
0.30±0.03
1
0.3
0.65
0.3
Page 6 of 6
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
M
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(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
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e)
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
ed M
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(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(p
20100202
lan
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
