FK4B01100L1

Product Standards MOS FET FK4B01100L1 FK4B01100L1 Single N-channel MOS FET For ｌoad switching circuits Unit: mm 0.80 3 1 2 0.80 4 TOP  Low Drain-source ON resistance:RDS(on) typ. = 27 mΩ (VGS = 2.5 V)  CSP (Chip Size Package)  RoHS compliant (EU RoHS / MSL:Level 1 compliant) 0.10  Features 0.40  Marking Symbol: 1A BOTTOM  Packaging Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 ºC Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current Power Dissipation Channel Temperature Operating Ambient Temperature Storage Temperature Note *1 *2 *3 *4 VDS VGS ID1*1 ID2*2 ID3*3 IDp1*1*4 IDp2*2*4 IDp3*3*4 PD1*1 PD2*2 PD3*3 Tch Topr Tstg Rating Unit 12 ±8 3.4 5.2 6.5 27 41 52 0.36 0.82 1.3 150 -40 ~ +85 -55 ~ +150 V V 0.60 0.20 0.40 0.60 1. Gate 2. Drain Panasonic JEITA Code 3. Source 4. Source XLGA004-W-0808-RA01 — —  Internal Connection A 2(D) ○ A W °C °C °C ○ ○ 1(G) 3,4(S) FR4 board (25.4mm×25.4mm×t1.0mm)、Min Cu 36mm2 Copper FR4 board (25.4mm×25.4mm×t1.0mm)、Full Cu Ceramic substrate (70mm×70mm×t1.0mm) t = 10 μs, Duty Cycle < 1% Page 1 of 6 Product Standards MOS FET FK4B01100L1  Electrical Characteristics Ta = 25 ºC ± 3 ºC Parameter Symbol Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Gate Threshold Voltage VDSS IDSS IGSS Vth Drain-Source ON Resistance RDS(on) Input Capacitance *1 Output Capacitance *1 Reverse Transfer Capacitance *1 Turn-on delay time *1,*2 Rise time *1,*2 Turn-off delay time *1,*2 Fall time *1,*2 Total Gate Charge *1 Gate to Source Charge *1 Gate to Drain Miller Charge *1 Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VF(D-S) Note Conditions ID = 1 mA, VGS = 0 VDS = 12 V, VGS = 0 VGS = ±8 V, VDS = 0 V ID = 236 μA, VDS =10 V ID = 1.5 A, VGS = 4.5 V ID = 1.0 A, VGS = 2.5 V ID = 0.5 A, VGS = 1.8 V ID = 0.25 A, VGS = 1.5 V VDS = 10 V VGS = 0 f = 1MHz VDD = 6 V VGS = 0 to 4.5 V ID=1.0 A VDD = 6 V VGS = 4.5 V IS= 1.0 A IF = 0.2A, VGS = 0V Min Typ Max Unit 12 0.3 22 27 33 43 275 100 70 7 14 165 76 5.8 0.75 0.95 0.6 10 ±10 1.0 30 40 56 99 V μA μA V mΩ pF ns 1.2 nC nC nC V Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Guaranteed by design, not subject to production testing *2 Measurement circuit for Turn-on delay time / Rise time / Turn-off delay time / Fall time  Electrical State Discharge Characteristics Standard AEC-Q101-001 Test Type Human body model Machine model Symbol HBM MM Conditions C = 100 pF, R = 1.5 kΩ C = 200 pF, R = 0 Ω Class Value H1C >1k to ≦ 2k M2 >100 to ≦ 200 Unit V V Page 2 of 6 Product Standards MOS FET FK4B01100L1 Note2: Measurement circuit VDD = 6V Vin ID=1A RL= 6Ω 4.5V Vout D 0V PW = 10 μs D.C. ≤ 1 % G 50 Ω S Vin 90 % Vin 10 % 90 % 90 % Vout 10 % td(on) tr 10 % td(off) tf Page 3 of 6 Product Standards MOS FET FK4B01100L1 ID - VDS RDS(on) - ID 100 2 Drain source On-resistance RDS(on)(mΩ) 4.5V Drain current ID(A) 2.5V 1.5 1.8V 1.5V 1 VGS=1.2V 0.5 1.5V 1.8V 2.5V VGS=4.5V 10 0 0 0.1 0.1 0.2 0.3 Drain-source voltage VDS(V) 1 Drain current ID(A) ID - VGS RDS(on) - VGS 1 Drain-Source On-resistance RDS(on) (mΩ) 100 90 80 70 60 50 40 30 20 10 0 Drain current ID(A) 125ºC 85ºC 0.1 25ºC -40ºC 0.01 0 0.5 Gate-source voltage VGS(V) 125ºC -40ºC 25ºC 0 1 1 85ºC 2 3 4 5 6 7 Gate-source voltage VGS(V) IF - VF 8 IGS - VGS 1 1E-4 125ºC Gate-source Leakage Current IGS (A) Diode Forward Current IF (A) 10 85ºC 25ºC 0.1 - 40ºC 0.01 0 0.2 0.4 0.6 0.8 Body Diode Forward Voltage VF (V) 1 1E-5 1E-6 125ºC 1E-7 85ºC 25ºC 1E-8 - 40ºC 1E-9 0 5 10 15 Gate-source voltage VGS(V) Page 4 of 6 Product Standards MOS FET FK4B01100L1 Dynamic Input/Output Characteristics 1E-3 4.5 1E-4 4.0 1E-5 Gate to source Voltage VG(V) Zero Gate Voltage Drain Current IDS( A ) IDS - VDS 125ºC 1E-6 1E-7 85ºC 1E-8 25ºC 1E-9 1E-10 -40ºC 1E-11 0 5 10 15 3.5 VDD = 6 V 3.0 2.5 2.0 12 V 1.5 1.0 0.5 0.0 20 0 25 1 2 3 4 5 Total Gate Charge Qg (nC) Drain-source Voltage VDS ( V ) Rth - tsw Safe Operating Area 100 Min Cu 36mm2 Copper. 100 IDP=27A Drain current ID (A) Thermal resistance Rth (ºC / W) 1000 6 Full Cu 10 10 1 0.1 Ta=25ºC, Mounted on FR4 board (25.4mm×25.4mm×t1.0mm). 10us Limited by RDS(on)(VGS=4.5V) 1ms 10ms Ta=25ºC, Mounted on FR4 board (25.4mm×25.4mm×t1.0mm). Min Cu 36mm2 Copper. 100m 1s DC 1 0.001 0.1 10 Pulse Width tsw (s) 1000 0.01 0.01 0.1 1 10 100 Drain-source Voltage VDS (V) Page 5 of 6 Product Standards MOS FET FK4B01100L1  XLGA004-W-0808-RA01 Unit: mm 0.80±0.04 3 1 2 0.10±0.02 0.80±0.04 4 0.60 0.40 Φ0.20±0.03 0.40 0.60  Land Pattern (Reference) 0.40 Φ0.20±0.03 0.40 Page 6 of 6