FK4B01120L1

Product Standards MOS FET FK4B01120L1 FK4B01120L1 Single N-channel MOS FET Unit: mm For Load switching circuits 1.0 3 1 2 1.0 4  Low Drain-source ON resistance:RDS(on) typ. = 17mΩ（VGS = 2.5 V)  CSP (Chip Size Package)  RoHS compliant (EU RoHS / MSL:Level 1 compliant) 0.10 TOP  Features 0.25 BOTTOM 2  Packaging 0.5 Embossed type (Thermo-compression sealing) : 1 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 ºC Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current Power Dissipation Channel Temperature Operating Ambient Temperature Storage Temperature Note *1 *2 *3 *4 VDS VGS ID1*1 ID2*2 ID3*3 IDp1*1*4 IDp2*2*4 IDp3*3*4 PD1*1 PD2*2 PD3*3 Tch Topr Tstg Rating Unit 12 ±8 3.9 6.5 7.9 31 52 63 0.37 0.94 1.5 150 -40 ~ +85 -55 ~ +150 V V A 1 0.75  Marking Symbol: 1C 4 0.5 3 0.75 1. Gate 2. Drain Panasonic JEITA Code 3. Source 4. Source ULGA004-W-1010-RA01 — —  Internal Connection 2(D) ○ A W °C °C °C ○ ○ 1(G) 3,4(S FR4 board (25.4mm×25.4mm×t1.0mm)、Min Cu 36mm2 Copper FR4 board (25.4mm×25.4mm×t1.0mm)、Full Cu Ceramic substrate (70mm×70mm×t1.0mm) t = 10 μs, Duty Cycle < 1% Page 1 of 6 Product Standards MOS FET FK4B01120L1  Electrical Characteristics Ta = 25 ºC ± 3 ºC Parameter Symbol Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Gate Threshold Voltage VDSS IDSS IGSS Vth Drain-Source ON Resistance RDS(on) Input Capacitance *1 Output Capacitance *1 Reverse Transfer Capacitance *1 Turn-on delay time *1,*2 Rise time *1,*2 Turn-off delay time *1,*2 Fall time *1,*2 Total Gate Charge *1 Gate to Source Charge *1 Gate to Drain Miller Charge *1 Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VF(D-S) Note Conditions ID = 1 mA, VGS = 0 VDS = 12 V, VGS = 0 VGS = ±8 V, VDS = 0 V ID = 394 μA, VDS =10 V ID = 1.5 A, VGS = 4.5 V ID = 1.0 A, VGS = 2.5 V ID = 0.5 A, VGS = 1.8 V ID = 0.25 A, VGS = 1.5 V VDS = 10 V VGS = 0 f = 1MHz Min Typ Max Unit 12 0.3 14 17 21 27 490 184 128 4.3 3.7 235 147 7 1.4 1.5 0.6 VDD = 6 V VGS = 0 to 4.5 V ID=1.0 A VDD = 6 V VGS = 4.5 V ID= 1.0 A IF = 0.2A, VGS = 0V V μA μA V 10 ±10 1.0 24 27 36 62 mΩ pF ns nC nC nC V 1.2 Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Guaranteed by design, not subject to production testing *2 Measurement circuit for Turn-on delay time / Rise time / Turn-off delay time / Fall time  Electrical State Discharge Characteristics Standard Test Type Symbol Conditions Human body model HBM C = 100 pF, R = 1.5 kΩ AEC-Q101-001 C = 200 pF, R = 0 Ω MM Machine model Class Value Unit H2 M2 >2k to ≦ 4k >100 to ≦ 200 V V Page 2 of 6 Product Standards MOS FET FK4B01120L1 Note2: Measurement circuit VDD = 6V Vin ID=1A RL= 6Ω 4.5V Vout 0V D PW = 10 μs D.C. ≤ 1 % G 50 Ω Vin S 90 % Vin 10 % 90 % 90 % Vout 10 % td(on) tr 10 % td(off) tf Page 3 of 6 Product Standards MOS FET FK4B01120L1 ID - VDS RDS(on) - ID 3.5 Drain-Source On-resistance RDS(on) (mΩ) 3 Drain current ID(A) 100 4.5V 2.5V 2.5 1.8V 2 1.5V 1.5 1 VGS=1.2V 0.5 0 0 0.1 0.2 0.3 Drain-source voltage VDS(V) ID - VGS 1.8V 2.5V VGS=4.5V 10 0.1 10 RDS(on) - VGS 40 Drain-Source On-resistance RDS(on) (mΩ) 125ºC 85ºC 25ºC 0.1 －40℃ 0.01 0 0.5 Gate-source voltage VGS(V) 30 125ºC 20 10 -40ºC 25ºC 0 1 Gate-source Leakage Current IGS (A) 85ºC 25ºC 0.1 -40ºC 0.01 0.4 2 3 4 5 6 7 8 IGS - VGS 125ºC 0.2 1 Gate-source voltage VGS(V) 1 0 85ºC 0 IF - VF Diode Forward Current IF (A) 1 Drain current ID(A) 1 Drain current ID(A) 1.5V 0.6 0.8 Body Diode Forward Voltage VF (V) 1 1.E-04 1.E-05 125ºC 1.E-06 85ºC 1.E-07 25ºC 1.E-08 －40ºC 1.E-09 0 5 10 15 Gate-source voltage VGS(V) Page 4 of 6 Product Standards MOS FET FK4B01120L1 IDS - VDS Dynamic Input/Output Characteristics Zero Gate Voltage Drain Current IDS( A ) 1.E-03 4.5 125ºC 1.E-05 1.E-06 1.E-07 85ºC 1.E-08 25ºC 1.E-09 1.E-10 -40ºC 1.E-11 0 5 10 15 20 4.0 Gate to source Voltage VG(V) 1.E-04 25 3.5 VDD = 6 V 3.0 2.5 2.0 12 V 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6 7 Total Gate Charge Qg (nC) Drain-source Voltage VDS ( V ) Rth - tsw Safe Operating Area 100 IDP=31A Min Cu 36mm2 Copper. Drain current ID (A) Thermal resistance Rth (ºC / W) 1000 100 Full Cu 10 Ta=25ºC, Mounted on FR4 board (25.4mm×25.4mm×t1.0mm). 1 0.001 8 0.1 10 Pulse Width tsw (s) 1000 10 10us Limited by RDS(on)(VGS=4.5V) 1ms 1 10ms 0.1 Ta=25ºC, Mounted on FR4 board (25.4mm×25.4mm×t1.0mm). using the minimum recommendedpad size (Cu area=47mm2 including traces). 0.01 0.01 0.1 1 100ms 1s DC 10 100 Drain-source Voltage VDS (V) Page 5 of 6 Product Standards MOS FET FK4B01120L1  ULGA004-W-1010-RA01 Unit: mm 1.00±0.05 3 1 2 0.10±0.02 1.00±0.05 4 0.75 0.50 Φ0.25±0.03 0.50 0.75  Land Pattern (Reference) 0.50 Φ0.25±0.03 0.50 Page 6 of 6