LNA2W01L

This product complies with the RoHS Directive (EU 2002/95/EC). Infrared Light Emitting Diodes LNA2W01L (LN57) GaAs Infrared Light Emitting Diode For optical control systems  Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. M Di ain sc te on na tin nc ue e/ d  High-power output, high-efficiency: PO = 4.5 mW (typ.)  Emitted light spectrum suited for silicon photodetectors  Infrared light emission close to monochromatic light: λP = 950 nm (typ.)  Wide directivity: θ = 18° (typ.)  Ultra-miniature double ended package Symbol Rating Unit Power dissipation PD 75 mW Forward current IF 50 mA Pulse forward current * IFP 1 A Reverse voltage VR 3 V Operating ambient temperature Topr –25 to +85 °C Storage temperature Tstg –30 to +100 °C Note) *: f = 100 Hz, Duty cycle = 0.1%  Electrical-Optical Characteristics Ta = 25°C±3°C Symbol PO Reverse current IR Forward voltage VF Conditions IF = 50 mA Ct isc Terminal capacitance ce /D Peak emission wavelength an Spectral half band width en Half-power angle λP Δλ θ Min Typ 3.0 4.5 VR = 3 V IF = 50 mA on tin Radiant power * ue Parameter 1.25 Max Unit mW 10 µA 1.50 V VR = 0 V, f = 1 MHz 35 pF IF = 50 mA 950 nm IF = 50 mA 50 nm The angle when the radiant power is halved. 18 ° int Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. Ma 2. Cutoff frequency: 1 MHz PO at f = fC fC : 10 × log = −3 PO at f = 50 kHz 3. *: A light detection element uses a silicon diode have proofread a load with a standard device. Note) The part number in the parenthesis shows conventional part number. Publication date: October 2008 SHC00034CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). LNA2W01L IF  Ta 60 IFP  Duty cycle 102 IF  VF 80 Ta = 25°C Ta = 25°C 30 10 Forward current IF (mA) Pulse forward current IFP (A) 40 1 10 −1 20 60 40 20 M Di ain sc te on na tin nc ue e/ d Forward current IF (mA) 50 10 −2 10 20 40 60 80 10 −3 −2 10 100 IFP  VF 102 10 1 0 0.4 0.8 1.2 1.6 Forward voltage VF (V) ∆PO  IFP 103 Ta = 25°C tW = 10 µs (1) f = 100 Hz (2) f = 21 kHz (3) f = 42 kHz (4) f = 60 kHz Ta = 25°C 80 60 40 102 (1) 10 (2) (4) (3) 1 20 1 2 3 0 5 4 ue Ma 0.4 0 40 30 40 50 60 10 −1 10 80 Ambient temperature Ta (°C) 120 1 000 IF = 50 mA 102 10 1 −40 0 40 80 Ambient temperature Ta (°C) SHC00034CED 102 104 103 Pulse forward current IFP (mA) ∆PO  Ta on tin int 1 mA Relative radiant power ∆PO isc ce /D an en 10 mA 0 −40 20 103 IF = 50 mA 0.8 10 Forward current IF (mA) VF  Ta 1.2 0 Peak emission wavelength λP (nm) 0 1.6 Forward voltage VF (V) 0 102 100 Relative radiant power ∆PO Pulse forward current IFP (mA) tW = 10 µs Duty cycle = 0.1% Ta = 25°C Forward voltage VF (V) 2 10 ∆PO  IF 120 103 10 −1 1 Duty cycle (%) Ambient temperature Ta (°C) 104 10 −1 Relative radiant power ∆PO 0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 −25 120 λP  Ta IF = 50 mA 980 960 940 920 900 −40 0 40 80 Ambient temperature Ta (°C) 120 an en ue on tin isc ce /D IF = 50 mA Ta = 25°C 900 940 980 Wavelength λ (nm) 0° 100 Directive characteristics 90 80 70 80 60 60 50 40 40 30 20 20 1 020 1 060 1 100 SHC00034CED 10° 40° 50° 60° 70° Modulation output Relative radiant intensity  λ Relative radiant intensity (%) 100 Frequency f (kHz) di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. int 0 860 Ma Relative radiant intensity (%) M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). LNA2W01L 20° 102 Modulation output  f 30° 10 −2 Ta = 25°C 10 1 80° 10 −1 90° 1 10 102 103 3 4 an en ue on tin isc ce /D di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. int  Pin name 1: Anode 2: Cathode Ma M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). LNA2W01L  Package (Unit: mm) LETLTN2S0001 SHC00034CED Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es ne ain ain foll htt visit d d te te ow p:/ fo d /w llo is isc nan nan ing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i / on . (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. Pl ea Ma int en an ce /D isc on tin ue 20080805