LNJ052X8ARA

LNJ052X8ARA

  • 厂商:

    NAIS(松下)

  • 封装:

    SMD,1.8x1.1mm

  • 描述:

    发光二极管/LED SMD,1.8x1.1mm

  • 数据手册
  • 价格&库存
LNJ052X8ARA 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Light Emitting Diodes LNJ052X8ARA Hight Bright Surface Mounting Chip LED SV (Side View) -0.4 Type  Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Power dissipation PD 70 mW Forward current IF 20 mA Pulse forward current * IFP 70 mA Reverse voltage VR 5 V Operating ambient temperature Topr –30 to +85 °C Storage temperature Tstg –40 to +100 °C  Lighting Color  White di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du Relative luminous n.pintensitybo(%) yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. M Di ain sc te on na tin nc ue e/ d Parameter Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.  Electro-Optical Characteristics Ta = 25°C±3°C Parameter Symbol Luminous intensity * IO Reverse current IR Forward voltage VF x Chromaticity coordinates y Note) *: Measurement tolerance: ±20% IO  IF an 50 int en 30 1 3 5 10 30 50 Forward current IF (mA) Max Unit 200 280 470 mcd 10 µA 3.7 V 2.7 IF = 10 mA 0.260 0.320  IF = 10 mA 0.208 0.357  IF  VF 10 3.0 Relative luminous intensity  Ta 5 50 30 3 10 1 5 0.5 3 0.3 1 1.0 100 Typ IF = 10 mA ue ce /D 100 Min VR = 5 V on tin Forward current IF (mA) isc 300 10 IF = 10 mA 100 500 Ma Luminous intensity IO (mcd) 1 000 Conditions 2.0 3.0 4.0 0.1 5.0 Forward voltage VF (V) −20 0 30° 20° 10° 40° X Y 50° 10° 20° 30° 40° 80° 50° 60° 60° 60° 40° 70° 70° 20° 80° 90° 100 0° 80 60 40 20 0 60 80 100 20 15 10 5 80° 20 40 60 Relative luminous intensity (%) Publication date: January 2009 Forward current IF (mA) Directive characteristics X 40 IF  Ta 25 Y 20 Ambient temperature Ta (°C) SHD00717BEK 80 90° 100 0 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) 1 an en 2 ue on tin isc ce /D  Pin name 1: Anode 2: Cathode di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. int Ma M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). LNJ052X8ARA  Package (Unit: mm) KLTFSN2K5200 SHD00717BEK Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es ne ain ain foll htt visit d d te te ow p:/ fo d /w llo is isc nan nan ing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i / on . (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. Pl ea Ma int en an ce /D isc on tin ue 20080805
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