LNJ236W82RA

LNJ236W82RA

  • 厂商:

    NAIS(松下)

  • 封装:

    0603

  • 描述:

    LED RED 0603 SMD

  • 数据手册
  • 价格&库存
LNJ236W82RA 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Light Emitting Diodes LNJ236W82RA Hight Bright Surface Mounting Chip LED ESS Type  Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Power dissipation PD 55 mW Forward current IF 20 mA Pulse forward current * IFP 60 mA  Lighting Color  Red Reverse voltage Operating ambient temperature Storage temperature ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so intensity e Pr ab(%)d ty d ty Relative luminous od ni o p p c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. M Di ain sc te on na tin nc ue e/ d Parameter VR 4 V Topr –30 to +85 °C Tstg –40 to +100 °C Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.  Electro-Optical Characteristics Ta = 25°C±3°C Parameter Symbol Luminous intensity *1 Reverse current Forward voltage Peak emission wavelength Dominant emission wavelength *2 Spectral half band width Note) *1: Measurement tolerance: ±20% *2: Measurement tolerance: ±2 nm IO  I F 5 3 D is 1 0.3 1 3 5 10 30 50 100 µA 2.30 V IF = 5 mA 645 λd IF = 5 mA Δλ IF = 5 mA 620 IF  VF 10 50 5 30 3 10 1 5 0.5 3 0.3 1.7 1.9 2.1 2.3 0.1 2.5 X Y 60 −30° 0° −20° −10° −40° Peak emission wavelength λP (nm) 30° 40° 50° 60° 60° 40° −70° −90° 100 10° 20° 80° 70° 20° −80° 700 640 nm 20 nm Relative luminous intensity  Ta −20 0 20 40 60 80 100 Ambient temperature Ta (°C) Directive characteristics −60° 20 630 25 −50° 40 nm IF  Ta X Publication date: December 2008 100 λP 80 650 mcd 1.95 Y 600 26.8 IF = 5 mA 1 1.5 100 550 7.0 VF Pl Relative luminous intensity (%) M Relative luminous intensity  λP 0 5.8 Forward voltage VF (V) ai nt Forward current IF (mA) Unit VR = 4 V 80 60 40 20 0 Forward current IF (mA) 0.1 an c e/ 0.5 Max IR co nt in 1 Typ IF = 5 mA Forward current IF (mA) 50 30 Min IO 100 en Luminous intensity IO (mcd) 100 Conditions 80° 20 40 60 Relative luminous intensity (%) SHD00705BEK 80 90° 100 20 15 10 5 0 −30 0 30 60 90 Ambient temperature Ta (°C) 1 This product complies with the RoHS Directive (EU 2002/95/EC). LNJ236W82RA  Package (Unit: mm) KLTFTN2K3600  Pin name 1: Anode 2: Cathode 2 SHD00705BEK Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20080805
LNJ236W82RA 价格&库存

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