LNJ836W83RA

LNJ836W83RA

  • 厂商:

    NAIS(松下)

  • 封装:

    ESS类LED

  • 描述:

    LED ORANGE 0603 SMD

  • 数据手册
  • 价格&库存
LNJ836W83RA 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Light Emitting Diodes LNJ836W83RA Hight Bright Surface Mounting Chip LED ESS Type  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit PD 55 mW IF 20 mA  Orange M Di ain sc te on na tin nc ue e/ d Power dissipation  Lighting Color Pulse forward current * Reverse voltage Operating ambient temperature Storage temperature ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur sintensitya(%) d t d e Pr Relative luminous o od t ni bo yp yp c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. Forward current IFP 60 mA VR 4 V Topr –30 to +85 °C Tstg –40 to +100 °C Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.  Electro-Optical Characteristics Ta = 25°C±3°C Parameter Symbol Luminous intensity *1 Reverse current Forward voltage Peak emission wavelength Dominant emission wavelength *2 Spectral half band width Note) *1: Measurement tolerance: ±20% *2: Measurement tolerance: ±2 nm IO  I F e/ D 5 1 3 en 5 10 30 50 100 Forward current IF (mA) λd IF = 5 mA Δλ IF = 5 mA 615 IF  VF 10 50 5 30 3 10 1 5 0.5 3 0.3 1.9 2.1 2.3 0.1 2.5 0° −20° −10° 30° 40° 80° 50° 60° 60° 40° −70° 70° 20° −80° −90° 750 100 10° 20° 80 60 40 20 0 627 nm 13 nm Relative luminous intensity  Ta −20 0 20 40 60 80 100 Ambient temperature Ta (°C) Directive characteristics −30° nm 620 IF  Ta 25 −60° Publication date: November 2008 V 630 −40° X Y−50° Peak emission wavelength λP (nm) 2.30 IF = 5 mA Pl M Relative luminous intensity (%) 60 700 µA λP X 650 mcd 100 1.95 Y 600 47.3 IF = 5 mA 80 0 550 17.5 VF 1 1.7 100 20 11.5 Forward voltage VF (V) Relative luminous intensity  λP 40 Unit VR = 4 V Forward current IF (mA) 1 an c 3 Max IF = 5 mA Forward current IF (mA) is 10 Typ IR co nt in 30 Min IO 100 50 ai nt Luminous intensity IO (mcd) 100 Conditions 20 15 10 5 80° 20 40 60 Relative luminous intensity (%) SHD00732AEK 80 90° 100 0 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) 1 This product complies with the RoHS Directive (EU 2002/95/EC). LNJ836W83RA  Package (Unit: mm) KLTFTN2K3600  Pin name 1: Anode 2: Cathode 2 SHD00732AEK Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20080805
LNJ836W83RA 价格&库存

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LNJ836W83RA
  •  国内价格 香港价格
  • 1+3.606111+0.46749
  • 10+2.4806610+0.32159
  • 100+1.76380100+0.22866
  • 500+1.44081500+0.18678
  • 1000+1.334191000+0.17296
  • 2000+1.243492000+0.16121

库存:4049