MA22D2800L

MA22D2800L

  • 厂商:

    NAIS(松下)

  • 封装:

    SOD-123F

  • 描述:

    DIODE SCHOTTKY 30V 1.5A MINI2

  • 数据手册
  • 价格&库存
MA22D2800L 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA22D28 Silicon epitaxial planar type For high speed switching ■ Features Unit: mm 0.80±0.05 1.6±0.1 M Di ain sc te on na tin nc ue e/ d 1 0 to 0.1 VR Repetitive peak reverse voltage Forward current (Average) *1 Non-repetitive peak forward surge current *2 VRRM IF(AV) IFSM Junction temperature Tj Storage temperature Tstg Unit 30 V 30 V 1.5 A 30 A 150 °C −55 to +150 °C 0.45±0.1 0.55±0.1 0.16+0.1 –0.06 5˚ Note) *1: Mounted on a alumina PC board *2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) 0 to 0.3 Reverse voltage 2 Rating 0 to 0.1 Symbol di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Parameter 5˚ ■ Absolute Maximum Ratings Ta = 25°C 2.6±0.1 3.5±0.1 • Forward current IF(AV) = 1.5 A rectification is possible • Low forward voltage VF 1: Anode 2: Cathode Mini2-F1 Package Marking Symbol: 3Z Parameter Symbol Forward voltage Typ Max Unit IF = 0.5 A 0.34 0.38 V IF = 1.0 A 0.38 0.42 ue ■ Electrical Characteristics Ta = 25°C ± 3°C IF = 1.5 A 0.42 0.46 IR VR = 30 V VF1 VF2 Reverse current Terminal capacitance ce /D isc on tin VF3 Ct trr an Reverse recovery time * Conditions Min µA 100 VR = 10 V, f = 1 MHz 50 pF IF = IR = 100 mA Irr = 10 mA , RL = 100 Ω 13 ns Ma int en Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *: trr measuring instrument Bias Application Unit (N-50BU) Input Pulse tp tr 10% Pulse Generator (PG-10N) Rs = 50 Ω Publication date: October 2003 Wave Form Analyzer (SAS-8130) V R Ri = 50 Ω A SKH00126AED 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 This product complies with the RoHS Directive (EU 2002/95/EC). MA22D28 IF  V F IR  VR 104 Ct  VR 250 103 Ta = 25°C Ta = 150°C 102 125°C 10 75°C 25°C 1 −20°C Ta = 150°C Terminal capacitance Ct (pF) Reverse current IR (mA) 102 125°C 10 75°C 1 200 150 100 M Di ain sc te on na tin nc ue e/ d Forward current IF (mA) 103 10−1 0.2 0.4 0.6 0.8 1.0 10−3 1.2 Rth  t 10 15 20 25 10 1 10−2 10−1 1 10 102 Ma int en an ce /D isc on tin Time t (s) 2 30 (2) ue Thermal resistance Rth (°C/W) 5 (1) 102 10−1 10−3 0 0 Reverse voltage VR (V) (1) Glass epoxy board (2) Alumina PC board Copper foil 2.0 mm × 2.0 mm 50 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 Forward voltage VF (V) 103 25°C 10−2 10−2 10−3 10−1 SKH00126AED 103 35 0 5 10 15 20 25 30 Reverse voltage VR (V) 35 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
MA22D2800L 价格&库存

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