MA2SD2900L

This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA2SD29 Silicon epitaxial planar type Unit: mm 0.60+0.05 –0.03 For super high speed switching 0.12+0.05 –0.02 0.80+0.05 –0.03 2 0.30±0.05 VR Repetitive peak reverse voltage VRRM Forward current (Average) IF(AV) Peak forward current IFM Non-repetitive peak forward IFSM surge current * Junction temperature Tj Storage temperature Tstg Unit 30 V 30 V 100 mA 200 mA 1 A 125 °C −55 to +125 °C (0.15) Reverse voltage 5˚ Rating 0.01±0.01 Symbol 0+0 –0.05 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ■ Absolute Maximum Ratings Ta = 25°C Parameter 1.60±0.05 1.20+0.05 –0.03 0.01±0.01 5˚ (0.80) • Low forward voltage: VF < 0.42 V (at IF = 100 mA) • Optimum for high frequency rectification because of its short reverse recovery time trr . (0.60) M Di ain sc te on na tin nc ue e/ d (0.60) 0.80±0.05 1 ■ Features 1: Anode 2: Cathode SSMini2-F1 Package Marking Symbol: 8M Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol IR1 ue Reverse current ce /D isc on tin IR2 Forward voltage VF1 VF2 Terminal capacitance Ct trr en an Reverse recovery time * Conditions Min Typ VR = 10 V VR = 30 V Max Unit 25 µA 120 IF = 10 mA 0.25 0.29 IF = 100 mA 0.39 0.42 V VR = 0 V, f = 1 MHz 11 pF IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 1 ns Ma int Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz 4. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse tp tr 10% Pulse Generator (PG-10N) Rs = 50 Ω Publication date: October 2003 A Wave Form Analyzer (SAS-8130) V R Ri = 50 Ω SKH00135AED 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 2 75°C 10 10−3 25°C 1 −25°C 10−1 0 0.1 0.2 0.3 0.4 Reverse current IR (µA) 102 0.5 Forward voltage VF (V) 0.6 0 1 Reverse voltage VR (V) di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ue ce /D isc on tin an en int Ma Forward current IF (mA) M Di ain sc te on na tin nc ue e/ d 103 IF  V F Ta = 125°C 102 75°C 10 25°C 1 5 10 15 20 SKH00135AED 25 Terminal capacitance Ct (pF) MA2SD29 This product complies with the RoHS Directive (EU 2002/95/EC). 103 IR  VR 25 Ct  VR Ta = 125°C Ta = 25°C 10−2 30 20 15 10 5 0 5 Reverse voltage VR (V) 10 15 20 25 30 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. 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