MA3D650

This product complies with the RoHS Directive (EU 2002/95/EC). Fast Recovery Diodes (FRD) MA3D650 (MA6D50) Silicon planar type (cathode common) Unit: mm For high-frequency rectification 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 M Di ain sc te on na tin nc ue e/ d 15.0±0.5 ■ Features Symbol Repetitive peak reverse voltage VRRM Non-repetitive peak reverse surge voltage VRSM Forward current (Average) IF(AV) Non-repetitive peak forward surge current * IFSM 1.4±0.2 1.6±0.2 Rating Unit 200 V 200 V 10 A 60 A Junction temperature Tj −40 to +150 °C Storage temperature Tstg −40 to +150 °C Solder Dip ■ Absolute Maximum Ratings Ta = 25°C Parameter φ 3.2±0.1 2.6±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 13.7±0.2 4.2±0.2 • Low forward voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown voltage • Easy-to-mount, caused by its V cut lead end 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 1: Anode 2: Cathode (Common) 3: Anode TO-220D-A1 Package 3 Internal Connection 1 2 3 Typ Max Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current) Forward voltage Symbol ce /D isc on tin Parameter ue ■ Electrical Characteristics Ta = 25°C ± 3°C VF Repetitive peak reverse current en int Thermal resistance (j-c) Ma Thermal resistance (j-a) Min Unit IF = 5 A, TC = 25°C 0.98 V IRRM1 VRRM = 200 V, TC = 25°C 100 µA IRRM2 VRRM = 200 V, Tj = 150°C 6 mA IF = 1 A, IR = 1 A 30 ns Rth(j-c) 3.0 °C/W Rth(j-a) 63 °C/W trr an Reverse recovery time * Conditions Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 10 MHz. 3. *: trr measurement circuit 50 Ω 50 Ω trr IF D.U.T IR 5.5 Ω 0.1 × IR Note) The part number in the parenthesis shows conventional part number. Publication date: March 2004 SKJ00003BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). MA3D650 IF  VF VF  Ta 102 IR  V R 104 1.6 Ta = 150°C −20°C 1 10 −1 103 IF = 10 A 1.2 Reverse current IR (µA) Ta = 150°C 5A 0.8 100°C 102 25°C 10 M Di ain sc te on na tin nc ue e/ d Forward current IF (A) 10 Forward voltage VF (V) 100°C 25°C 1A 0.4 10 −2 0.6 0.8 1.0 1.2 IR  T a 100 V 10 V 103 Reverse current IR (µA) 80 120 102 10 1 40 80 120 160 200 ce /D isc on tin Ambient temperature Ta (°C) IF(AV)  TC an 12 t0 / t1 = 1/2 en 10 DC int 1/3 Ma 1/6 6 40 20 0 50 100 150 200 t0 t1 100 140 Case temperature TC (°C) 2 250 Reverse voltage VR (V) 2 60 10 −1 0 20 SKJ00003BED 40 60 80 100 120 Reverse voltage VR (V) f = 1 MHz Ta = 25°C 4 0 20 200 60 0 0 160 Ct  VR VR = 200 V Forward current (Average) IF(AV) (A) 40 80 104 8 0 Ambient temperature Ta (°C) Forward voltage VF (V) 10 −1 −40 0 −40 300 PD(AV)  IF(AV) 30 Power dissipation (Average) PD(AV) (W) 0.4 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0.2 Terminal capacitance Ct (pF) 0 ue 10 −3 1 t0 t1 25 20 t0 / t1 = 1/6 15 1/3 1/2 DC 10 5 0 0 2 4 6 8 10 12 Forward current (Average) IF(AV) (A) Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.