MA3S781F0L

This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA3S781F Silicon epitaxial planar type For high speed switching circuits Unit: mm 0.28±0.05 0.80±0.05 Unit Reverse voltage VR 30 V Maximum peak reverse voltage VRM 30 V Single Junction temperature Tj Storage temperature Tstg 0.88+0.05 –0.03 3° 0.60+0.05 –0.03 1.60+0.05 –0.03 3° mA 20 150 IFM Series (0.80) (0.80) 1: Anode 1 2: Cathode 2 3: Cathode 1 Anode 2 EIAJ : SC-81 mA 110 125 °C –55 to +125 °C (0.15) Series Peak forward current 30 IF 0.28±0.05 (0.51) 0 to 0.1 Single Forward current (0.51) (0.44) Rating di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Symbol 1.60±0.05 1 2 (0.80) M Di ain sc te on na tin nc ue e/ d 3  Absolute Maximum Ratings Ta = 25°C Parameter 0.12+0.05 –0.02 (0.44)  Optimum for high-density mounting  Short reverse recovery time trr , optimum for high-frequency rectification (0.375)  Features SSMini3-F2 Package Marking Symbol: M1U Internal Connection ue  Electrical Characteristics Ta = 25°C±3°C Symbol on tin Parameter isc VF1 VF2 ce /D Forward voltage IR an Reverse current Ct int en Terminal capacitance trr Detection efficiency η Ma Reverse recovery time * Conditions Min 3 1 2 Typ Max IF = 1 mA 0.4 IF = 30 mA 1.0 VR = 30 V 300 Unit V nA VR = 1 V, f = 1 MHz 1.5 pF IF = IR = 10 mA, Irr = 1 mA RL = 100 Ω 1.0 ns VIN = 3 V(peak) , f = 30 MHz RL = 3.9 kkΩ Ω, CL = 10 pF 65 % Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 2 000 MHz 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse tp tr 10% A Pulse Generator (PG-10N) Rs = 50 Ω Publication date: January 2005 VR Wave Form Analyzer (SAS-8130) Ri = 50 Ω SKH00143AED 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 1 mA IF = IR = 10 mA RL = 100 Ω 1 This product complies with the RoHS Directive (EU 2002/95/EC). MA3S781F MA3S781F_ IF-VF IR  VR 103 VF  Ta 103 102 Reverse current IR (µA) −20°C Ta = 125°C 1.6 10 1 10 75°C 1 25°C 1.2 0.8 0.8 0.4 1.2 Forward voltage VF (V) MA3S781F_ IR-Ta IR  Ta Terminal capacitance Ct (pF) VR = 30 V 10 V 1V 10 1 10−1 120 40 200 0 -40 30 120 40 200 Reverse voltage VR (V) Ambient temperature Ta (°C) MA3S781F_ Ct-VR MA3S781F_ IF(surge)-tW 2.0 1.0 0 IF(surge)  tW Ta = 25°C tW IF(surge) 2.0 1.0 0 10 20 Reverse voltage VR (V) on tin isc ce /D an en int Ma 1 mA 3.0 ue Ambient temperature Ta (°C) 2 20 3.0 102 Reverse current IR (µA) 10 Ct  VR 103 10−2 −40 0 F(surge) 0 10−2 3 mA di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp Forward c(A)t p surge current I life an ut e ed as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 10−2 10−1 IF = 30 mA 0.4 M Di ain sc te on na tin nc ue e/ d 10−1 Ta = 125°C Forward voltage VF (V) 75°C 25°C 102 Forward current IF (mA) MA3S781F_ VF-Ta MA3S781F_ IR-VR IF  VF SKH00143AED 30 0 10−1 1 10 Pulse width tW (ms) Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.