MA3X153A0L

MA3X153A0L

  • 厂商:

    NAIS(松下)

  • 封装:

    SC-59A

  • 描述:

    DIODE ARRAY GP 80V 100MA MINI3

  • 数据手册
  • 价格&库存
MA3X153A0L 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Switching Diodes MA3X153 (MA153), MA3X153A (MA153A) Silicon epitaxial planar type Unit: mm For switching circuits 0.40+0.10 –0.05 0.16+0.10 –0.06 ■ Absolute Maximum Ratings Ta = 25°C Symbol 1.9±0.1 0.4±0.2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Parameter 5˚ 2 1 (0.95) (0.95) (0.65) • Small terminal capacitance Ct • Two diodes are connected in series in the package 2.8+0.2 –0.3 M Di ain sc te on na tin nc ue e/ d ■ Features 1.50+0.25 –0.05 3 2.90+0.20 –0.05 Rating Unit 40 V MA3X153A Maximum peak reverse voltage Forward current MA3X153 80 VRM 40 MA3X153A Single 100 IF Series Single Peak forward current V 80 EIAJ: SC-59 mA Marking Symbol • MA3X153: MC 150 °C Internal Connection −55 to +150 °C 200 Series 130 Junction temperature Tj Storage temperature Tstg 1: Anode 1 2: Cathode 2 3: Anode 2 Cathode 1 Mini3-G1 Package mA 65 IFM 1.1+0.2 –0.1 VR 0 to 0.1 MA3X153 1.1+0.3 –0.1 10˚ Reverse voltage • MA3X153A: MP 3 1 2 Parameter Forward voltage ce /D isc on tin ue ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol VF Reverse voltage MA3X153 VR an MA3X153A MA3X153 IR int en Reverse current MA3X153A Ma Terminal capacitance Reverse recovery time *3 Ct trr*1 trr *2 Conditions Min Typ IF = 100 mA IR = 100 µA Max 1.2 40 Unit V V 80 VR = 40 V 100 VR = 75 V 100 VR = 0 V, f = 1 MHz 5.0 IF = 10 mA, VR = 6 V Irr = 0.1 IR, RL = 100 Ω nA pF 150 ns 9 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 100 MHz. Bias Application Unit (N-50BU) Input Pulse Output Pulse 3. *1: Between pins 2 and 3 tp tr *2: Between pins 1 and 3 t 10% trr *3: trr measurement circuit IF t A VR Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Irr = 0.1 IR IF = 10 mA VR = 6 V RL = 100 Ω Note) The part numbers in the parenthesis show conventional part number. Publication date: February 2005 SKF00036DED 1 This product complies with the RoHS Directive (EU 2002/95/EC). MA3X153, MA3X153A IF  V F Ta = 25°C D2 (3-2) 3 Forward current IF (mA) 102 2 10 D1 (1-3) D2 (3-2) 102 2 1 Reverse current IR (µA) D1 (1-3) 3 1 103 10 Ta = 125°C 1 10 −1 3 D1 (1-3) 10 −1 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) 10 −1 10 −2 0 0.2 0.4 0.6 0.8 1.0 10 −2 1.2 2 D1 (1-3) 10 −3 40 60 80 100 IR  Ta 102 an 2 0.1 mA D1 (1-3) Ma 1 D1 (1-3) 80 V 40 V 10 −1 D2 (3-2) 10 −2 0 −40 0 40 80 120 0 40 80 120 Ambient temperature Ta (°C) 50 VF  Ta 1 Ambient temperature Ta (°C) D1 (1-3) 3 D2 (3-2) 1 10 2 D2 (3-2) 1 −40 0.1 mA 3 D2 (3-2) 2 0 40 80 120 Ambient temperature Ta (°C) SKF00036DED 40 80 120 160 Ct  VR 10 f = 1 MHz Ta = 25°C 3 D1 (1-3) D2 (3-2) 1 1 2 D2 (3-2) D1 (1-3) 10 −1 0 3 mA 1 mA Ambient temperature Ta (°C) VR = 40 V D1 (1-3) IF = 10 mA 0.4 IR  Ta 10 −2 40 0.6 0 −40 160 10 −1 −40 30 0.2 2 1 102 VR = 80 V int 1 40 V en D2 (3-2) D1 (1-3) 10 Reverse current IR (nA) 3 103 3 2 1 mA 0.4 ce /D isc on tin Reverse voltage VR (V) 10 −3 3 mA 0.2 D2 (3-2) 20 0.6 Forward voltage VF (V) 1 0 20 0.8 IF = 10 mA Terminal capacitance Ct (pF) D2 (3-2) Ta = 25°C 10 1.0 ue D1 (1-3) Forward voltage VF (V) 3 D2 (3-2) Reverse voltage VR (V) 0.8 D2 (3-2) 1 Reverse current IR (µA) Reverse current IR (µA) Ta = 125°C 10 −2 0 VF  Ta D1 (1-3) 10 −1 D1 (1-3) Ta = 25°C 1.0 10 2 1 Forward voltage VF (V) IR  V R D2 (3-2) 1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 10 −2 1 D2 (3-2) 10 M Di ain sc te on na tin nc ue e/ d Forward current IF (mA) 103 Ta = 25°C D1 (1-3) 102 IR  V R IF  V F 103 0 10 20 30 40 Reverse voltage VR (V) 50 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
MA3X153A0L 价格&库存

很抱歉,暂时无法提供与“MA3X153A0L”相匹配的价格&库存,您可以联系我们找货

免费人工找货