This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA3X153 (MA153), MA3X153A (MA153A)
Silicon epitaxial planar type
Unit: mm
For switching circuits
0.40+0.10
–0.05
0.16+0.10
–0.06
■ Absolute Maximum Ratings Ta = 25°C
Symbol
1.9±0.1
0.4±0.2
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Parameter
5˚
2
1
(0.95) (0.95)
(0.65)
• Small terminal capacitance Ct
• Two diodes are connected in series in the package
2.8+0.2
–0.3
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■ Features
1.50+0.25
–0.05
3
2.90+0.20
–0.05
Rating
Unit
40
V
MA3X153A
Maximum peak
reverse voltage
Forward current
MA3X153
80
VRM
40
MA3X153A
Single
100
IF
Series
Single
Peak forward
current
V
80
EIAJ: SC-59
mA
Marking Symbol
• MA3X153: MC
150
°C
Internal Connection
−55 to +150
°C
200
Series
130
Junction temperature
Tj
Storage temperature
Tstg
1: Anode 1
2: Cathode 2
3: Anode 2
Cathode 1
Mini3-G1 Package
mA
65
IFM
1.1+0.2
–0.1
VR
0 to 0.1
MA3X153
1.1+0.3
–0.1
10˚
Reverse voltage
• MA3X153A: MP
3
1
2
Parameter
Forward voltage
ce
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isc
on
tin
ue
■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol
VF
Reverse voltage
MA3X153
VR
an
MA3X153A
MA3X153
IR
int
en
Reverse current
MA3X153A
Ma
Terminal capacitance
Reverse recovery time *3
Ct
trr*1
trr
*2
Conditions
Min
Typ
IF = 100 mA
IR = 100 µA
Max
1.2
40
Unit
V
V
80
VR = 40 V
100
VR = 75 V
100
VR = 0 V, f = 1 MHz
5.0
IF = 10 mA, VR = 6 V
Irr = 0.1 IR, RL = 100 Ω
nA
pF
150
ns
9
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
3. *1: Between pins 2 and 3
tp
tr
*2: Between pins 1 and 3
t
10%
trr
*3: trr measurement circuit
IF
t
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2005
SKF00036DED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3X153, MA3X153A
IF V F
Ta = 25°C
D2 (3-2)
3
Forward current IF (mA)
102
2
10
D1 (1-3)
D2 (3-2)
102
2
1
Reverse current IR (µA)
D1 (1-3)
3
1
103
10
Ta = 125°C
1
10 −1
3
D1 (1-3)
10 −1
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage VF (V)
10 −1
10 −2
0
0.2
0.4
0.6
0.8
1.0
10 −2
1.2
2
D1 (1-3)
10 −3
40
60
80
100
IR Ta
102
an
2
0.1 mA
D1 (1-3)
Ma
1
D1 (1-3)
80 V
40 V
10 −1
D2 (3-2)
10 −2
0
−40
0
40
80
120
0
40
80
120
Ambient temperature Ta (°C)
50
VF Ta
1
Ambient temperature Ta (°C)
D1 (1-3)
3
D2 (3-2)
1
10
2
D2 (3-2)
1
−40
0.1 mA
3
D2 (3-2)
2
0
40
80
120
Ambient temperature Ta (°C)
SKF00036DED
40
80
120
160
Ct VR
10
f = 1 MHz
Ta = 25°C
3
D1 (1-3)
D2 (3-2)
1
1
2
D2 (3-2)
D1 (1-3)
10 −1
0
3 mA
1 mA
Ambient temperature Ta (°C)
VR = 40 V
D1 (1-3)
IF = 10 mA
0.4
IR Ta
10 −2
40
0.6
0
−40
160
10 −1
−40
30
0.2
2
1
102
VR = 80 V
int
1
40 V
en
D2 (3-2)
D1 (1-3)
10
Reverse current IR (nA)
3
103
3
2
1 mA
0.4
ce
/D
isc
on
tin
Reverse voltage VR (V)
10 −3
3 mA
0.2
D2 (3-2)
20
0.6
Forward voltage VF (V)
1
0
20
0.8
IF = 10 mA
Terminal capacitance Ct (pF)
D2 (3-2)
Ta = 25°C
10
1.0
ue
D1 (1-3)
Forward voltage VF (V)
3
D2 (3-2)
Reverse voltage VR (V)
0.8
D2 (3-2)
1
Reverse current IR (µA)
Reverse current IR (µA)
Ta = 125°C
10 −2
0
VF Ta
D1 (1-3)
10 −1
D1 (1-3)
Ta = 25°C
1.0
10
2
1
Forward voltage VF (V)
IR V R
D2 (3-2)
1
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10 −2
1
D2 (3-2)
10
M
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Forward current IF (mA)
103
Ta = 25°C
D1 (1-3)
102
IR V R
IF V F
103
0
10
20
30
40
Reverse voltage VR (V)
50
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
M
Di ain
sc te
on na
tin nc
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
ea
Ma
int
en
an
ce
/D
isc
on
tin
ue
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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