MA3X74000L

This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 0.4±0.2 2.8+0.2 –0.3 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series connection) • Forward current (Average) IF(AV) = 200 mA (per single diode) rectification is possible 5˚ ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od t ni bo yp yp c. u e e uc ne t l d tl ife t/s ate cy c/ st en in cl e fo st rm ag at e. io n. ■ Features 1.50+0.25 –0.05 3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Parameter Symbol Rating Unit VR 30 V Reverse voltage Repetitive peak reverse voltage VRRM 30 V Forward current Single IF(AV) 200 mA (Average) Series  Peak forward Single current Series  Non-repetitive peak Single 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C Marking Symbol: M3C 300 mA Internal Connection 220 3 IFSM 1.0 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C forward surge current * Series  1: Anode 1 2: Cathode 2 3: Cathode 1 Anode 2 Mini3-G1 Package EIAJ: SC-59 130 IFM 1.1+0.3 –0.1 1.1+0.2 –0.1 10˚ A 0.7 1 2 Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) nt in ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol co Parameter is Forward voltage /D Reverse current ce Terminal capacitance M ai nt en an Reverse recovery time * Conditions VF IF = 200 mA Min Typ Max Unit 0.55 V 50 µA IR VR = 30 V Ct VR = 0 V, f = 1 MHz 30 pF trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 3.0 ns Pl ea Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.   3. Absolute frequency of input and output is 1 GHz. 4. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: February 2005 Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. SKH00083DED 1 This product complies with the RoHS Directive (EU 2002/95/EC). MA3X740 IF  VF IR  VR 103 0.5 100°C 25°C 10 1 10−1 0.4 103 100°C 102 10 25°C 0.1 0.2 0.3 0.4 0.5 10−1 0.6 10 Reverse current IR (µA) 10 V 5V 102 10 80 120 160 200 100 mA 0.2 f = 1 MHz Ta = 25°C 16 8 0 5 10 15 20 25 Reverse voltage VR (V) SKH00083DED 0 −40 0 40 80 120 160 Ambient temperature Ta (°C) 24 0 40 Ambient temperature Ta (°C) 2 Terminal capacitance Ct (pF) VR = 30 V 0 30 Ct  VR 32 103 1 −40 20 Reverse voltage VR (V) IR  Ta 104 0.3 1 mA 0 Forward voltage VF (V) 105 IF = 200 mA 0.1 1 0 Forward voltage VF (V) −20°C Ta = 150°C Reverse current IR (µA) Forward current IF (mA) Ta = 150°C 104 102 10−2 VF  Ta 105 30 200 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. 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