MA4X86200L

This product complies with the RoHS Directive (EU 2002/95/EC). Band Switching Diodes MA4X862 (MA862) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For band switching 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 1 (0.65) (0.2) di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0.60+0.10 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Reverse voltage Rating VR Forward current Single IF Double *1  Unit 35 V 100 mA 1.1+0.3 –0.1 Symbol 10˚ +0.2 0 to 0.1 1.1–0.1 Parameter 0.4±0.2 2 5˚ 0.5R 2.8+0.2 –0.3 4 M Di ain sc te on na tin nc ue e/ d 3 • Two electrically independent elements incorporated • Small diode capacitance CD • Low forward dynamic resistance rf • Optimum for a band switching of tuner 1.50+0.25 –0.05 ■ Features 1: Cathode 1 2: Cathode 2 3: Anode 2 4: Anode 1 Mini4-G1 Package 75 Operating ambient temperature *2 Topr Storage temperature Tstg −25 to +85 °C −55 to +100 °C Note) *1: Value of each diode in double diodes used. *2: Maximum ambient temperature during operation. EIAJ: SC-61 Marking Symbol: M1I Internal Connection 3 4 2 1 Parameter Forward voltage ce /D isc on tin ue ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol VF Reverse current IR an Diode capacitance Ma int en Forward dynamic resistance CD rf1 *1 rf2 *2 Conditions Min Typ Max Unit IF = 100 mA 1.0 V VR = 33 V 100 nA VR = 6 V, f = 1 MHz 1.2 pF IF = 2 mA, f = 100 MHz 0.65 Ω 0.98 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *1: Measuring instrument; Nihon Koshuha MODEL TDC-121A *2: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER Note) The part number in the parenthesis shows conventional part number. Publication date: March 2004 SKG00014CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). MA4X862 1 Forward current IF (mA) 1 Ta = 25°C 1 2 3 10 Ta = 85°C 25°C 50°C 1 10 4 3 1 M Di ain sc te on na tin nc ue e/ d 10 −1 IR  VR (1-4 pins) 102 2 4 4 3 10 Forward current IF (mA) IF  VF (2-3 pins) 102 1 2 Reverse current IR (pA) IF  VF (1-4 pins) 102 Ta = 85°C 10 −2 −20°C 0.8 1.0 1.2 1 4 3 10 −1 0 10 20 30 40 50 60 rf  I F an en int 1.6 Ma Forward dynamic resistance rf (Ω) f = 100 MHz Ta = 25°C rf Tester: TDC-121A 2.0 1.2 0.8 0.4 0 10 −1 1 10 Forward current IF (mA) 0.6 0.8 1.0 1.2 0 10 20 IF = 2 mA Ta = 25°C rf Tester: TDC-121A 6 4 2 0 102 30 1 40 IF = 2 mA Ta = 25°C rf Tester: YHP4191A 8 6 4 2 1 Frequency f (MHz) 102 10 Frequency f (MHz) rf  I F CD  VR 1.6 f = 1 MHz Ta = 25°C f = 100 MHz Ta = 25°C rf Tester: YHP4191A 2.4 1.6 0.8 1 10 Forward current IF (mA) SKG00014CED 60 rf  f 10 0 102 10 3.2 0 10 −1 50 Reverse voltage VR (V) 12 ce /D isc on tin Reverse voltage VR (V) 2.4 0.4 8 Forward dynamic resistance rf (Ω) Reverse current IR (pA) 10 2 0.2 rf  f Ta = 25°C 1 10 −2 0 Forward voltage VF (V) IR  VR (2-3 pins) 102 10 −2 Forward dynamic resistance rf (Ω) 0.6 Diode capacitance CD (pF) 0.4 Forward voltage VF (V) 2 10 −1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0.2 ue 0 Forward dynamic resistance rf (Ω) 10 −3 10 −2 −20°C 10 −1 50°C 25°C 102 1.2 0.8 0.4 0 0 10 20 30 40 Reverse voltage VR (V) 50 103 10 −1 Pulse width tW (ms) 1 10 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ue ce /D isc on tin an en int 10 −1 Ma Forward surge current IF(surge) (A) M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). MA4X862 IF (surge)  tW Ta = 25°C 102 10 1 SKG00014CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.