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MAZT082H0L

MAZT082H0L

  • 厂商:

    NAIS(松下)

  • 封装:

    SOT490

  • 描述:

    TVS DIODE 5VWM SSMINI

  • 数据手册
  • 价格&库存
MAZT082H0L 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Zener Diodes MAZTxxxH Series Silicon planar type For surge absorption circuit ■ Package M Di ain sc te on na tin nc ue e/ d ■ Features • Pin Name SSMini3-F2 • Pin Name 1: Cathode 1 2: Cathode 2 3: Anode di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. • Two elements anode-common type • Power dissipation PD : 150 mW ■ Absolute Maximum Ratings Ta = 25°C Parameter Power dissipation Symbol * PD Junction temperature Tj Storage temperature Tstg Rating Unit 150 mW 150 °C Refer to the list of the electrical characteristics −55 to +150 °C within part numbers ■ Marking Symbol Note) *: PD = 150 mW achieved with a printed circuit board. ■ Internal Connection 3 1 2 Parameter Zener voltage* ce /D isc on tin ue ■ Common Electrical Characteristics Ta = 25°C ± 3°C Symbol VZ RZK Zener operating resistance RZ en Reverse current an Zener rise operating resistance IR Conditions IZ Specified value IZ Specified value IZ Specified value VR Specified value Min Typ Refer to the list of the electrical characteristics within part numbers Max Unit V Ω Ω µA Ma int Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Electrostatic breakdown voltage: ±10 kV Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times) 3. *: The temperature must be controlled 25°C for VZ mesurement. VZ value measured at other temperature must be adjusted to VZ (25°C) VZ guaranted 20 ms after current flow. Publication date: August 2008 SKE00013FED 1 This product complies with the RoHS Directive (EU 2002/95/EC). MAZTxxxH Series ■ Electrical characteristics within part numbers Ta = 25°C ± 3°C Zener voltage Part number Reverse current Zener rise Zener operating operating resistance resistance IR (mA) VR Max (V) RZ (Ω) RZK (Ω) IZ = 5 mA IZ = 0.5 mA Max Max VZ (V) Marking symbol Nom Max MAZT062H 5.8 6.2 6.6 5 0.2 4 50 100 6.2Z MAZT068H 6.4 6.8 7.2 5 0.1 4 30 60 6.8Z MAZT082H 7.7 8.2 8.7 5 0.1 5 30 60 8.2Z M Di ain sc te on na tin nc ue e/ d Min IZ (mA) PD  Ta IZ  VZ 102 250 10 mm 10 mm A K 0.8 mm Print foil t = 0.035 mm 1 10 −2 10 −3 40 80 120 160 200 ce /D isc on tin en an Ta = 25°C Ma int MAZT062H 10 MAZT082H MAZT068H 1 10 −1 1 10 Zener current IZ (mA) 102 Temperature coefficient of zener voltage SZ (mV / °C) RZ  IZ 102 Ta = 25°C 4 6 8 10 1 10 −1 10 12 14 10 −2 0 Zener voltage VZ (V) 0.4 SZ  IZ 12 0.8 1.2 Forward voltage VF (V) Ct  VR 30 Ta = 25°C to 150°C Ta = 25°C 10 Terminal capacitance Ct (pF) 50 MAZT082H MAZT062H MAZT068H 10 −1 100 Zener operating resistance RZ (Ω) Forward current IF (mA) Zener current IZ (mA) 150 0 IF  VF 10 Ambient temperature Ta (°C) 2 102 Ta = 25°C ue Power dissipation PD (mW) 200 0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Note) ∗: IZ = 1.0 mA 8 6 MAZT082H 4 MAZT068H 2 0 20 MAZT068H MAZT062H MAZT082H 10 MAZT062H 0 10 20 30 40 50 Zener current IZ (mA) SKE00013FED 60 0 0 4 8 Reverse voltage VR (V) 12 3° 1.60 +0.05 −0.03 ±0.05 0.28 ±0.05 3 1 2 (0.51) 0.28 ±0.05 (0.51) (0.80) (0.80) SSMini3-F2 0.12 SKE00013FED +0.05 −0.03 ±0.05 di p Pl lan nclu ea e se0.1 (0.80) 0.80 0 to pla m d m des v f a n a o i 1.60 htt sit ed int int llo p:/ fo e w e /w llo dis disc nan nan ing ww wi co on ce c 3°fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat (0.44) c(0.44) yc on es le ic. t(0.375) i sta 0.88 n co fo ge .jp rm (0.15) . /en at i o / n. ue ce /D isc on tin an en int Ma M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). MAZTxxxH Series Unit: mm +0.05 −0.02 0.60 −0.03 +0.05 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
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