Doc No. TT4-EA-13115
Revision. 2
Product Standards
MOS FET
MTM232270LBF
MTM232270LBF
Silicon N-channel MOS FET
Unit : mm
For switching
MTM13227 in SMini3 type package
2.0
0.3
Features
0.15
3
1.25
2.1
Low drain-source On-state resistance : RDS(on) typ = 85 m (VGS = 4.0 V)
Low drive voltage: 2.5 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
1
2
Marking Symbol : ET
0.9
(0.65)(0.65)
1.3
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1.
2.
3.
Absolute Maximum Ratings Ta = 25 C
項目
記号
Drain-source Voltage
Gate-source Voltage
Drain current
Peak drain current *1
Power dissipation *2
Channel temperature
Operating ambient temperature
Storage Temperature Range
Note)
VDS
VGS
ID
IDp
PD
Tch
Topr
Tstg
定格
20
±10
2.0
8
500
150
-40 to + 85
-55 to +150
単位
V
A
A
mW
C
C
C
Panasonic
JEITA
Code
Gate
Source
Drain
SMini3-G1-B
SC-70
SOT-323
Internal Connection
(D)
3
*1 Pulse width ≦10 s, Duty cycle ≦1 %
*2 Measuring on ceramic board at 40 38 0.1 mm
Absolute maximum rating PD without heat sink shall be made 150 mW.
1
(G)
2
(S)
Pin Name
1.
2.
3.
Gate
Source
Drain
Page 1 of 6
Established : 2011-03-09
Revised
: 2013-09-02
Doc No. TT4-EA-13115
Revision. 2
Product Standards
MOS FET
MTM232270LBF
Electrical Characteristics Ta = 25 C 3 C
項目
記号
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
条件
VDSS
IDSS
IGSS
Vth
ID = 1 mA, VGS = 0 V
VDS = 20 V, VGS = 0 V
VGS = 8 V, VDS = 0 V
ID = 1.0 mA, VDS = 10 V
RDS(ON)1 ID = 1 A, VGS = 4 V
Drain-source ON resistance *1
RDS(ON)2 ID = 0.5 A, VGS = 2.5 V
ID = 1 A, VDS = 10 V, f = 1 kHz
|Yfs|
Forward transfer admittance *1
Short-circuit input capacitance (Common source)
Ciss
Short-circuit output capacitance (Common source)
VDS = 10 V, VGS = 0, f = 1 MHz
Coss
Reverse transfer capacitance (Common source)
Crss
最小 標準 最大
20
0.4
0.85
85
100
3.0
10
10
1.3
110
150
単位
V
μA
μA
V
m
S
290
26
20
pF
Turn-on Time *2
ton
VDD = 10 V, VGS = 0 to 4 V
ID = 1 A
12
ns
Turn-off Time *2
toff
VDD = 10 V, VGS = -4 to 0 V
ID = 1 A
60
ns
Note)
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Pulse test : Pulse width ≦ 10 μs、Duty cycle ≦ 1 %
*2 Turn-on and Turn-off test circuit
Page 2 of 6
Established : 2011-03-09
Revised
: 2013-09-02
Doc No. TT4-EA-13115
Revision. 2
Product Standards
MOS FET
MTM232270LBF
VCC = 10 V
*2 Turn-on and Turn-off test circuit
ID = 1 A
RL = 10
Vin
Vout
0V
PW = 10 μs
D.C. ≦ 1 %
-4 V
D
G
Vin
50
S
90 %
Vin
10 %
90 %
Vout
10 %
t(on)
t(off)
Page 3 of 6
Established : 2011-03-09
Revised
: 2013-09-02
Doc No. TT4-EA-13115
Revision. 2
Product Standards
MOS FET
MTM232270LBF
Technical Data ( reference )
ID - VDS
ID - VGS
0.15
2
2.5 V
1.5
Drain current ID (A)
Drain current ID (A)
VGS = 4.0 V
2.0 V
1
1.5 V
0.5
Ta = 85 ℃
0.1
25 ℃
0.05
-40 ℃
-40 ℃
0
0
0
0.1
0.2
0.3
0
0.5
Drain-source voltage VDS (V)
2
RDS(on) - ID
0.5
1000
Drain source On-state Resistance
RDS(on) (m)
Drain-source Voltage VDS (V)
1.5
Gate-source voltage VGS (V)
VDS - VGS
0.4
0.3
ID = 1.0 A
0.2
0.5 A
0.1
0.25 A
0
0
1
2
3
4
5
2.5 V
100
VGS = 4.0 V
10
6
0.1
1
Gate-source Voltage VGS (V)
Drain current ID (A)
Dynamic Input/Output Characteristics
Capacitance - VDS
1000
Gate-source Voltage VGS (V)
10000
Capacitance C (pF)
1
Ciss
100
Coss
10
Crss
1
0.1
1
10
Drain-source Voltage VDS (V)
100
5
4
VDD = 10 V
3
2
1
0
0
1
2
3
4
Total Gate Charge Qg (nC)
Page 4 of 6
Established : 2011-03-09
Revised
: 2013-09-02
Doc No. TT4-EA-13115
Revision. 2
Product Standards
MOS FET
MTM232270LBF
Technical Data ( reference )
RDS(on) - Ta
1.5
150
Drain-source On-resistance
RDS(on) (mΩ)
Gate-source Threshold Voltage Vth (V)
Vth - Ta
1
0.5
VGS = 2.5 V
100
4.0 V
50
0
-50
0
-50
0
50
100
0
150
50
100
150
Temperature (℃)
Temperature (℃)
PD - Ta
Total Power Dissipation PD (W)
1
0.8
0.6
0.4
0.2
0
0
50
100
150
Temperature Ta (C)
Safe Operating Area
1000
100
IDp = 8 A
Drain current ID (A)
Thermal Resistance Rth (C/W)
Rth - tsw
100
10
1
1 ms
10 ms
0.1
0.01
Operation in this area
is limited by RDS(on)
100 ms
Ta = 25 C,
Glass epoxy board (25.4×25.4×t0.8mm)
coated with copper foil,
1s
DC
2
which has more than 300mm .
10
0.1
1
10
100
Pulse Width tsw (s)
1000
0.001
0.01
0.1
1
10
100
Drain-source Voltage VDS (V)
Page 5 of 6
Established : 2011-03-09
Revised
: 2013-09-02
Doc No. TT4-EA-13115
Revision. 2
Product Standards
MOS FET
MTM232270LBF
SMini3-G1-B
2.0±0.2
+0.10
0.15-0.05
+0.1
0.3 0.0
(8°)
2
1.3±0.1
0.2±0.1
(0.65) (0.65)
(0.425)
1
2.1±0.1
1.25±0.10
3
+0.2
0.9-0.1
0 to 0.1
0.9±0.1
(10°)
Land Pattern (Reference) (Unit : mm)
1.9
0.8
0.9
1.3
Page 6 of 6
Established : 2011-03-09
Revised
: 2013-09-02
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(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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