MTM981400BBF

Doc No. TT4-EA-10096 Revision. 3 Product Standards MOS FET MTM981400BBF MTM981400BBF Silicon P-channel MOSFET Unit: mm 5.0 For switching 0.4 8 7 6 5 1 2 3 4 5.0 6.0  Features  Low drain-source On-state Resistance RDS(on) typ = 28 m (VGS = -4.5 V)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 0.95 1.27  Marking Symbol BA  Packaging Embossed type (Thermo-compression sealing) 3 000 pcs / reel (standard) 1. 2. 3. 4. Source Source Source Gate 5. 6. 7. 8. Panasonic JEITA Code  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Drain-source Voltage Gate-source Voltage Drain Current Drain Current (Pulsed) *1 Total Power dissipation Channel Temperature Operating Ambient Temperature Storage Temperature Range Note: 0.22 VDS VGS ID IDp PD Tch Topr Tstg Rating Unit -40 20 -7.0 -28 2 150 -40 to + 85 -55 to +150 V V A A W C C C Drain Drain Drain Drain SO8-F1-B SC-111AA ― Internal Connection *1 Measuring on ceramic board at 50 mm  50 mm  1.0 mm. (D) 8 (D) 7 (D) 6 (D) 5 1 (S) 2 (S) 3 (S) 4 (G) Pin Name 1. 2. 3. 4. Source Source Source Gate 5. 6. 7. 8. Drain Drain Drain Drain Page 1 of 6 Established : 2007-11-08 Revised : 2013-10-15 Doc No. TT4-EA-10096 Revision. 3 Product Standards MOS FET MTM981400BBF  Electrical Characteristics Ta = 25C  3C Static Characteristics Parameter Symbol Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-source Leakage Current Gate-source threshold Voltage Drain-source On-state Resistance *1 *1 Forward transfer admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance *1,*2 Turn-on Delay Time *1,*2 Rise Time Turn-off Delay Time *1,*2 Fall Time *1,*2 Note: VDSS IDSS IGSS Vth RDS(on)1 RDS(on)2 |Yfs| Ciss Coss Crss td(on) tr td(off) tf Conditions ID = -1 mA, VGS = 0 V VDS = -40 V, VGS = 0 V VGS = 16 V, VDS = 0 V ID = -1.0 mA, VDS = -10.0 V ID = -7.0 A, VGS = -10 V ID = -3.5 A, VGS = -4.5 V ID = -7.0 A, VDS = -10 V VDS = -10 V, VGS = 0 V, f = 1 MHz VDD = -25 V, VGS = 0 V to -10 V ID = -3.5 A VDD = -25 V, VGS = -10 V to 0 V ID = -3.5 A Min -40 Typ Max 19 28 -10 10 -2.5 25 45 -1 Unit V A A V m S 10 2 700 190 175 18 15 230 70 pF ns ns 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Pulse test *2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time Page 2 of 6 Established : 2007-11-08 Revised : 2013-10-15 Doc No. TT4-EA-10096 Revision. 3 Product Standards MOS FET MTM981400BBF *2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time VDD = -25 V ID = -3.5 A RL = 7.1  Vin Vin 0V 0V Vout PW = 10 PW = 10 s μs D.C. 1% D.C.  1% -10-10 V V D G Vin 50  S 10 % Vin 90 % 90 % Vout 10 % td(on) tr td(off) tf Page 3 of 6 Established : 2007-11-08 Revised : 2013-10-15 Doc No. TT4-EA-10096 Revision. 3 Product Standards MOS FET MTM981400BBF Technical Data ( reference ) ID - VDS ID - VGS -2.5 -3 -10.0 V -4.0 V -4.5 V -3.5 V -2 Drain current ID (A) Drain Current ID (A) -2 -1.5 VGS = -3.0 V -1 -2.5 V Ta = 85 ℃ -1 25 ℃ -0.5 -40 ℃ -2.0 V 0 0 0 -0.02 -0.04 -0.06 -0.08 -0.1 0 -0.5 VDS - VGS -2 -2.5 100 Drain-source On-state Resistance RDS(on) (m) Drain-source Voltage VDS (V) -1.5 RDS(on) - ID -0.5 -0.4 -0.3 ID = - 7.0 A -0.2 -3.5 A -0.1 -1.7 A 0 0 -2 -4 -6 -8 -4.5 V VGS = -10.0 V 10 1 -0.1 -10 -1 Gate-source Voltage VGS (V) Dynamic Input/Output Characteristics -20 Gate-source Voltage VGS (V) 1000 Ciss 100 Coss Crss 10 -0.1 -10 Drain Current ID (A) Capacitance - VDS Capacitance C (pF) -1 Gate-source voltage VGS (V) Drain-source Voltage VDS (V) VDD = - 20 V -15 -10 -5 0 -1 -10 Drain-source Voltage VDS (V) -100 0 20 40 60 80 100 Total Gate Charge Qg (nC) Page 4 of 6 Established : 2007-11-08 Revised : 2013-10-15 Doc No. TT4-EA-10096 Revision. 3 Product Standards MOS FET MTM981400BBF Technical Data ( reference ) Vth - Ta RDS(on) - Ta 50 Drain-source On-resistance RDS(on) (m) Gate-source Threshold Voltage Vth (V) -2.5 -2 -1.5 -1 -0.5 40 VGS = -4.5 V 30 -10 V 20 10 0 0 -50 0 50 100 -50 150 0 50 100 150 Temperature (℃) Temperature (℃) PD - Ta Total Power Dissipation PD (W) 5 4 Measuring on ceramic board at 50 mm  50 mm  1.0 mm 3 2 1 0 0 50 100 150 Temperature Ta (C) Rth - tsw Safe Operating Area -1000 -100 Drain Current ID (A) Thermal Resistance Rth (C/W) 1000 100 10 IDp = -28 A -10 1 ms -1 -0.1 Operation in this area is limited by RDS(on) 10 ms Ta = 25 C, Glass epoxy board (25.4  25.4  t0.8 mm) coated with copper foil, 100 ms 1s which has more than 300 mm2. 1 0.1 1 10 Pulse Width tsw (s) 100 1000 -0.01 -0.01 -0.1 DC -1 -10 -100 Drain-source Voltage VDS (V) Page 5 of 6 Established : 2007-11-08 Revised : 2013-10-15 Doc No. TT4-EA-10096 Revision. 3 Product Standards MOS FET MTM981400BBF SO8-F1-B Unit : mm 5.0±0.2 0.22±0.05 +0.10 7 6 5 1 2 3 4 (0.5) 5.0±0.1 8 6.0±0.2 0.40-0.05 0 to 0.05 (0.25) 0.95±0.05 1.27  Land Pattern (Reference) (Unit : mm) 1.15 5.45 1.27 1.27 1.27 0.5 Page 6 of 6 Established : 2007-11-08 Revised : 2013-10-15 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202