This product complies with the RoHS Directive (EU 2002/95/EC).
Silicon MOS FETs (Small Signal)
MTMC8E28
Dual N-channel MOS FET
For lithium-ion secondary battery protection circuit
Package
The MTMC8E28 features the industry's lowest on-resistance, which has been
realized by leading-edge fine processing, and the adoption of ultra-miniature
package, which is most suitable for battery packs for mobile devices.
Code
WMini8-F1
Pin Name
1: Source 1
2: Gate 1
3: Source 2
4: Gate 2
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Overview
Features
Symbol
Drain-source surrender voltage
VDSS
Gate-source surrender voltage
VGSS
ID
Peak drain current
IDP
Power dissipation *
PD
Channel temperature
Tch
Storage temperature
Tstg
Internal Connection
Rating
Unit
20
V
±10
V
7.0
A
42
A
1.0
W
150
°C
–55 to +150
°C
(D)
7
(D)
6
(D)
5
1
2
3
4
(S1) (G1) (S2) (G2)
ue
Drain current
Marking Symbo: 4A
(D)
8
Absolute Maximum Ratings Ta = 25°C
Parameter
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Low on-resistance: Ron = 15 mΩ (typ.) (VGS = 4.5 V)
Mini type package and surface mounting type
2.9 mm × 2.8 mm (height 0.8 mm)
Drain common 2 elements
Halogen free
5: Drain
6: Drain
7: Drain
8: Drain
on
tin
Note) *: Glass epoxy board: 25.4 mm × 25.4 mm × 0.8 mm
Copper foil of the drain portion should have a area of 300 mm2 or more
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PD absolute maximum rating without a heat shink: 400 mW
Publication date: May 2008
SJF00087BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTMC8E28
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
20
Unit
Drain-source surrender voltage
VDSS
ID = 1 mA, VGS = 0
V
Drain-source cutoff current
IDSS
VDS = 20 V, VGS = 0
1.0
mA
Gate-source cutoff current
IGSS
VGS = ±8 V, VDS = 0
±10
mA
Gate threshold voltage
VTH
ID = 1.0 mA, VDS = 10.0 V
0.85
1.3
V
0.4
RDS(on)1 ID = 2.0 A, VGS = 4.5 V
15
21
mW
Drain-source ON resistance 2
RDS(on)2 ID = 2.0 A, VGS = 3.7 V
18
25
mW
Drain-source ON resistance 3
RDS(on)3 ID = 1.0 A, VGS = 2.5 V
22
33
mW
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Drain-source ON resistance 1
Forward transfer admittance
Yfs
Ciss
Short-circuit output capacitance (Common source)
Coss
Reverse transfer capacitance (Common source)
Crss
Turn-on delay time *
td(on)
Turn-off delay time *
td(off)
Rise time *
tr
Fall time *
tf
3.0
S
1 500
pF
110
pF
100
pF
VDD = 10 V, VGS = 0 V to 4 V, ID = 1.0 A
14
ns
VDD = 10 V, VGS = 4 V to 0 V, ID = 1.0 A
18
ns
VDD = 10 V, VGS = 0 V to 4 V, ID = 1.0 A
130
ns
VDD = 10 V, VGS = 4 V to 0 V, ID = 1.0 A
80
ns
VDS = 10 V, VGS = 0, f = 1 MHz
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Short-circuit input capacitance (Common source)
ID = 1.0 A, VDS = 10 V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Test circuit
4V
VIN
PW = 10 µs
Duty Cycle ≤ 1%
0V
G
VIN
50 Ω
VCC = 10 V
ID = 1 A
RL = 10 Ω
D
90%
VOUT
VOUT
S
ue
td(on)
on
tin
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2
10%
VIN
SJF00087BED
tr td(off)
90%
10%
tf
This product complies with the RoHS Directive (EU 2002/95/EC).
MTMC8E28
MTMC8E28_ IF-VSD
ID VGS
104
IDS VDS
1.0
102
VGS = 0 V
Drain-source current IDS (mA)
VDS = 10 V
10
Drain current ID (mA)
103
102
10
1
10−1
VGS = 1.2 V
0.8
1.1 V
0.6
0.4
1.0 V
0.2
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Forward current IF (mA)
MTMC8E28_ IDS-VDS
MTMC8E28_ ID-VGS
IF VSD
0
0.4
0.8
10−3
1.2
Source-drain voltage VSD (V)
MTMC8E28_ RDS(on)-VGS
RDS(on) VGS
10−1
0
0.4
0.8
1.2
4
6
8
MTMC8E28_ RDS(on)-VGS
MTMC8E28_ RDS(on)-ID
an
en
int
DS(on)
VGS = 2.5 V
25°C
3.7 V
0°C
0
2
4
6
8
Gate-source voltage VGS (V)
10−2
10−1
4.5 V
1
10
Drain current ID (A)
Ciss , Crss , Coss VDS
2 000
1 600
Ciss
1 200
Ma
Forward transfer admittance Yfs (S)
VDS = 10 V
50°C
MTMC8E28_Ciss , Crss , Coss -VDS
Short-circuit forward transfer capacitance (Common source) Ciss ,
Reverse transfer capacitance (Common source) Crss ,
Short-circuit output capacitance (Common source) Coss (pF)
ce
/D
102
isc
Yfs ID
RDS(on) ID
100°C
on
tin
MTMC8E28_ Yfs-ID
3.0
1
ID = 1.0 A
ue
Gate-source voltage VGS (V)
2.0
10−1
10−2
10
1.0
Gate-source voltage VGS (V)
Drain-source ON resistance RDS(on) (Ω)
2
0.9 V
Drain-source voltage VDS (V)
10−1
ID = 2.0 A
0
0
RDS(on) VGS
Drain-source ON resistance RDS(on) (Ω)
10−2
0
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ON resistance R c (Ω)
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1
10−2
10
800
400
1
1
10
102
103
Drain current ID (mA)
104
Coss
1
1
10
Crss
20
Drain-source voltage VDS (V)
SJF00087BED
3
4
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on
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/D
5°
±0.05
±0.10
8
7
6
5
1
2
3
4
0.65
8-0.30 −0.05
+0.10
±0.10
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This product complies with the RoHS Directive (EU 2002/95/EC).
MTMC8E28
WMini8-F1
Unit: mm
2.90 ±0.10
0.16 −0.05
SJF00087BED
+0.10
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
