This product complies with the RoHS Directive (EU 2002/95/EC).
Silicon MOSFETs (Small Signal)
MTMF8231
Silicon N-channel MOSFET
For Li-ion battery protection circuit
Overview
Package
Code
SO8-F1-B
Pin Name
1: Source
3: Source
5: Drain
7: Drain
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MTMF8231 is low Ron N-channel MOSFET designed for Li-ion battery
circuit of notebook computers.
Features
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Drain-source surrender voltage
VDSS
Gate-source surrender voltage
VGSS
Drain current
ID
Peak drain current
IDP
Avalanche current
IAS
Power dissipation *
PD
Channel temperature
Tch
Storage temperature
Tstg
2: Source
4: Gate
6: Drain
8: Drain
di
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Super Low on resistance: Ron = 3 mΩ (typ.) (VGS = 10 V, ID = 5.0 A)
Thin flat-lead package
Incorporating a built-in gate protection-diode
Rating
Unit
30
V
±20
V
18
A
72
A
18
A
1.0
W
150
°C
-55 to +150
°C
Marking Symbol: AA
Intemal Connection
8
7
6
5
1
2
3
4
Note) *: Measuring on cglass epoxy board at 25.4 mm × 25.4 mm × 0.8 mm
Absolute maximum rating without heat sink for PD is 500 mA
on
tin
ue
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
ce
/D
Drain-source cutoff current
en
int
Ma
Gate threshold voltage
an
Gate-source cutoff current
Min
Typ
Max
ID = 1 mA, VGS = 0
IDSS
VDS = 30 V, VGS = 0
10
mA
VGS = ±16 V, VDS = 0
±10
mA
2.5
V
IGSS
VTH
Drain-source ON resistance
RDS(on)
Forward transfer admittance
Yfs
Short-circuit input capacitance (Common source)
Ciss
Short-circuit output capacitance (Common source)
Coss
Reverse transfer capacitance (Common source)
Crss
Avalanche energy capability
EAS
Turn-on delay time *
Turn-off delay time *
ID = 1.0 mA, VDS = 10.0 V
30
Unit
VDSS
isc
Drain-source surrender voltage
Conditions
1.4
ID = 5.0 A, VGS = 4.5 V
6.5
9.8
ID = 5.0 A, VGS = 10 V
3.0
4.2
ID = 5.0 A, VDS = 10 V
10
V
mW
S
6 000
pF
690
pF
420
pF
VDD = 24 V, VGS = 10 V to 0 V, ID = 18 A
L = 0.5 mH, Rg = 25W, Tch = 25°C (initial)
162
mJ
td(on)
VDD = 15 V, VGS = 0 V to 10 V, ID = 5.0 A
20
ns
td(off)
VDD = 15 V, VGS = 0 V to 10 V, ID = 5.0 A
30
ns
Rise time *
tr
VDD = 15 V, VGS = 10 V to 0 V, ID = 5.0 A
400
ns
Fall time *
tf
VDD = 15 V, VGS = 10 V to 0 V, ID = 5.0 A
420
ns
Note)
VDS = 10 V, VGS = 0, f = 1 MHz
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Measurement circuit
Publication date: September 2009
SJF00074BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MTMF8231
Measurement circuit
VIN
10 V
VCC = 15 V
PW = 10 µs
Duty Cycle ≤ 1%
0V
ID = 5.0 A
RL = 3 Ω
D
G
VIN
90%
10%
VIN
VOUT
VOUT
90%
10%
50 Ω
S
tr td(off)
MTMF8231_ ID-VDS
MTMF8231_ ID-VGS
ID VDS
102
18
IDP = 72 A
1
10
12
10
6
4
4
2
2
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Gate-source voltage VGS (V)
on
tin
int
14
8
6
MTMF8231_ CX-VDS
Ciss , Crss , Coss VDS
8 000
7 000
Ciss
6 000
en
16
5 000
4 000
8
3 000
VGS = 4.5 V
6
2 000
4
10 V
2
0
1
10
Drain current ID (A)
2
isc
ce
/D
an
18
Ma
Drain-source ON resistance RDS(on) (mΩ)
20
1 000
100
14
10
8
Short-circuit input capacitance (Common source) Ciss ,
Short-circuit output capacitance (Common source) Coss ,
Reverse transfer capacitance (Common source) Crss (pF)
RDS(on) ID
16
12
10
ue
Drain-source voltage VDS (V)
MTMF8231_ RDS(on)-ID
12
0
102
DS(on)
Drain current ID (A)
Drain current ID (A)
t = 100 ms
ID = 5 A
18
14
10
RDS(on) VGS
20
VDS = 10 V
16
t = 10 ms
1
MTMF8231_ RDS(on)-VGS
ID VGS
t = 1 ms
10−1
10−1
tf
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ON resistance R
ct(mΩ)
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td(on)
0
Coss
Crss
0
5
10
15
20
25
Drain-source voltage VDS (V)
SJF00074BED
30
0
0
2
4
6
8 10 12 14 16 18 20
Gate-source voltage VGS (V)
an
en
ue
on
tin
isc
ce
/D
±0.10
8
7
6
1
2
3
1.27
4
0.40 −0.05
+0.10
±0.05
±0.20
di
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Pl 0 to 0.05
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(0.50)
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(0.25)
(0.25)
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This product complies with the RoHS Directive (EU 2002/95/EC).
MTMF8231
SO8-F1-B
Unit: mm
5.00 ±0.20
5
SJF00074BED
0.22 ±0.05
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
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20080805
