NP062AN00A

NP062AN00A

  • 厂商:

    NAIS(松下)

  • 封装:

    SOT963

  • 描述:

    NP062AN00A

  • 数据手册
  • 价格&库存
NP062AN00A 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors NP062AN Silicon NPN epitaxial planar type Unit: mm For digital circuits 0.12+0.03 -0.02 4 M Di ain sc te on na tin nc ue e/ d 0.80±0.05 ■ Features 1 2 3 0.10 • Two elements incorporated into one package • Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption 0 to 0.02 0.10 5 1.00±0.05 6 (0.35) (0.35) 1.00±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V 80 mA 125 mW 125 °C −55 to +125 °C Collector current IC Total power dissipation PT Junction temperature Tj Storage temperature Tstg (0.10) • UNR32AN × 2 0.37+0.03 -0.02 ■ Basic Part Number di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Display at No.1 lead 1: Emitter (Tr1) 2: Emitter (Tr2) 3: Base (Tr2) 4: Collector (Tr2) 5: Base (Tr1) 6: Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 2N Internal Connection 6 5 Tr1 1 Tr2 2 3 Parameter ce /D isc on tin ue ■ Electrical Characteristics Ta = 25°C ± 3°C 4 Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) VCB = 50 V, IE = 0 0.1 µA ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.2 mA hFE VCE = 10 V, IC = 5 mA 80 400  hFE(Small/ VCE = 10 V, IC = 5 mA 0.50 Ma int en an ICBO Collector-emitter cutoff current (Base open) Forward current transfer ratio hFE Ratio *  0.99 Large) Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.3 mA Output voltage high level VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ Input resistance R1 Resistance ratio R1 / R 2 Transition frequency fT 0.25 4.9 −30% VCB = 10 V, IE = −2 mA, f = 200 MHz V V 4.7 0.2 V +30% kΩ 0.1  150 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between one and another Publication date: June 2003 SJJ00272BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). NP062AN IC  VCE 0.9 mA IB = 1.0 mA 0.8 mA 70 0.7 mA Collector current IC (mA) 120 100 80 60 Ta = 25°C 0.6 mA 0.5 mA 0.4 mA 0.3 mA 60 50 0.2 mA 40 1 IC / IB = 10 Ta = 85°C 0.1 −25°C M Di ain sc te on na tin nc ue e/ d Total power dissipation PT (mW) VCE(sat)  IC 80 Collector-emitter saturation voltage VCE(sat) (V) PT  Ta 140 40 20 60 80 100 120 140 Forward current transfer ratio hFE Ta = 85°C 25°C 200 150 −25°C 100 50 1 10 100 VIN  IO int Ma Input voltage VIN (V) en an VO = 0.2 V Ta = 25°C 1 0.1 0.1 1 4 6 10 12 0.01 1 10 1 0 10 20 30 100 Collector-base voltage VCB (V) 100 SJJ00272BED 40 10 100 Collector current IC (mA) f = 1 MHz Ta = 25°C Output current IO (mA) 2 8 10 ce /D isc on tin Collector current IC (mA) 10 2 Cob  VCB VCE = 10 V 250 0 Collector-emitter voltage VCE (V) hFE  IC 300 0 Output current IO (mA) 40 25°C di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 20 ue 0 Ambient temperature Ta (°C) 0 0.1 mA 20 10 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 30 IO  VIN VO = 5 V Ta = 25°C 10 1 0.1 0 0.5 1.0 1.5 2.0 Input voltage VIN (V) 2.5 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
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