PNA1601M

PNA1601M

  • 厂商:

    NAIS(松下)

  • 封装:

    插件

  • 描述:

    PNA1601M

  • 数据手册
  • 价格&库存
PNA1601M 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Phototransistors PNA1601M (PN166) Silicon planar type For optical control systems  Features M Di ain sc te on na tin nc ue e/ d  High sensitivity  Wide sspectral sensitivity characteristics, suited for detecting various kinds of LEDs  Ultraminiature, thin side-view type package  Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open) Collector current Collector power dissipation * Operating ambient temperature Storage temperature Symbol Rating Unit VCEO 20 V IC 20 mA PC 50 mW Topr –25 to +65 °C Tstg –30 to +85 °C di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Parameter Note) *: The rate of electric power reduction is 1.5 mW/°C above Ta = 25°C.  Electrical-Optical Characteristics Ta = 25°C±3°C Parameter Symbol Sensitivity to infrared radiation *1 Collector-emitter cutoff current (Base open) Collector-emitter saturation voltage *1 5 25 mA 0.2 mA IC = 10 mA, H = 15 mW/cm2 0.5 V on tin isc 3 tr tf VCE = 10 V 850 nm The angle when the sensitivity to infrared radiation is halved 35 ° 4 µs 4 µs VCC = 10 V, IC = 5 mA, RL = 100 W int en an Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. This device is designed by disregarding radiation. *1:Source: Infrared radiation (λ = 940 nm) *2: Switching time measurement circuit Ma Note) 1. 2. 3. 4. ce /D Fall time *2 Unit VCE = 10 V θ Rise time *2 Max ICEO ue Half-power angle Typ VCE λPD = 10 V, H = 15 mW/cm2 Min SIR VCE(sat) Peak sensitivity wavelength Conditions Sig. in 50 Ω VCC RL (Input pulse) 90% 10% Sig. out (Output pulse) tr tr : Rise time tf : Fall time tf Note) The part number in the parenthesis shows conventional part number. Publication date: October 2008 SHE00002CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). PNA1601M 50 Photocurrent IL (mA) 30 20 VCE = 10 V Ta = 25°C T = 2 856K L = 1 000 lx 1.6 40 IL  L 10 Ta = 25°C T = 2 856 K 1.2 10 −1 500 lx 0.8 1 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (mW) IL  VCE 2.0 Photocurrent IL (mA) PC  Ta 60 10 20 40 60 80 0 100 ICEO  Ta 8 12 16 20 VCE = 10 V 1 10 −1 10 −2 80 VCE = 10 V T = 2 856 K 1 10 −2 −40 120 Ambient temperature Ta (°C) 0° 10° 20 ue ce /D 40° 50° 60° 70° 80° 103 80 ∆S  λ VCE = 10 V Ta = 25°C 60 40 20 0 600 120 700 800 900 1 000 1 100 1 200 Wavelength λ (nm) tr  IL VCE = 10 V Ta = 25°C tf  IL VCE = 10 V Ta = 25°C 103 102 Rise time tr (µs) Ma 40 40 103 30° an int en 60 Relative sensitivity ∆S (%) 80 102 80 Ambient temperature Ta (°C) isc 100 20° 0 on tin Directive characteristics 10 Illuminance L (lx) 102 Fall time tf (µs) 40 1 100 10 −1 0 10 −3 24 IL  Ta 10 Photocurrent IL (mA) Collector-emitter cutoff current (Base open) ICEO (nA) 4 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 10 −3 −40 0 Relative sensitivity ∆S (%) 0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 −20 10 10 −2 0.4 RL = 1 kΩ 10 500 Ω 100 Ω 1 10 −1 RL = 1 kΩ 10 500 Ω 100 Ω 1 10 −1 90° 10 −2 −2 10 10 −1 1 10 Photocurrent IL (mA) 2 SHE00002CED 102 10 −2 −2 10 10 −1 1 10 Photocurrent IL (mA) 102 an en ue on tin isc ce /D di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. int Ma M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). PNA1601M  Package (Unit: mm) LPTLSN2S0004  Pin name 1: Collector 2: Emitter SHE00002CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es ne ain ain foll htt visit d d te te ow p:/ fo d /w llo is isc nan nan ing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i / on . (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. Pl ea Ma int en an ce /D isc on tin ue 20080805
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