PNA2602M

Darlington Phototransistors PNA2602M Darlington Phototransistor Unit : mm 4.5±0.3 4.8±0.3 2.4 2.4 ø3.5±0.2 M Di ain sc te on na tin nc ue e/ d Features Not soldered For optical control systems 4.2±0.3 2.3 1.9 2-1.12 2-0.45±0.15 1.2 14.5 2.95 1.0 Darlington output, high sensitivity 36.6±0.5 Easy to combine light emission and photodetection on same printed circuit board 2-0.4±0.15 2.2±0.2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Small size, thin side-view type package Long lead and visible light cutoff design with PN205 1 2-0.6±0.15 2-0.45±0.15 2 2.54 R1.75 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Collector to emitter voltage VCEO Emitter to collector voltage VECO Collector current IC PC Operating ambient temperature Topr Storage temperature Tstg Unit 20 V 5 V 30 mA 100 mW –25 to +80 ˚C –30 to +100 ˚C 1: Emitter 2: Collector ce /D isc on tin ue Collector power dissipation Ratings Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO SIR an Sensitivity to infrared emitters int en Peak sensitivity wavelength Ma Acceptance half angle *1 Collector saturation voltage VCE = 10V θ VCE(sat) *1 VCE = 10V, H = 3.75 λP tr, tf*2 Response time Conditions min typ VCE = 10V *1 µW/cm2 0.1 max Unit 0.5 µA 3.0 mA 850 nm Measured from the optical axis to the half power point 35 deg. VCC = 10V, IC = 1mA, RL = 100Ω 150 µs IC = 100µA, H = 3.75 µW/cm2 1.5 V Measurements were made using infrared light (λ = 940 nm) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT RL ,, ,, 50Ω (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) 1 PNA2602M Darlington Phototransistors PC — Ta ICE(L) — VCE ICE(L) — L 10 3 100 80 VCE = 10V Ta = 25˚C T = 2856K Ta = 25˚C T = 2856K PC = 100mW L = 50 lx ICE(L) (mA) ICE(L) (mA) 16 12 10 2 30 lx 40 20 0 20 40 60 Ambient temperature 80 20 lx 4 10 lx 0 100 Ta (˚C ) 0 4 8 12 16 20 Collector to emitter voltage ICE(L) — Ta 10 10 1 10 –1 24 ICEO — Ta VCE = 10V T = 2856K 1 VCE (V) 10 2 10 Illuminance 100 VCE = 10V Ta = 25˚C VCE = 10V 10 1 60 Relative sensitivity 10 –1 80 S (%) ICEO (µA) 1 10 3 L (lx) Spectral sensitivity characteristics 10 2 Dark current ICE(L) (mA) 8 5 lx 2 lx 0 – 20 10 –1 40 10 –2 20 Ambient temperature 80 10 –3 – 20 120 Ta (˚C ) an Directivity characteristics 10˚ 20˚ en 0˚ 100 40 30 20 40˚ 50˚ 60˚ 70˚ 0 600 100 700 Ta (˚C ) 800 Sig. OUT RL tr 10 3 td 90% 10% tf 900 1000 1100 1200 Wavelength λ (nm) Sig.IN RL = 1kΩ 500Ω 10 2 tf — ICE(L) VCC Sig. OUT 50Ω Sig. OUT RL tr td 90% 10% tf 10 3 RL = 1kΩ 500Ω 100Ω 10 2 100Ω 80˚ 90˚ 10 10 –2 VCC = 10V Ta = 25˚C 10 –1 Collector photo current 2 80 VCC ,, , 50 60 tr — ICE(L) tr (µs) 60 40 Sig. OUT 50Ω 30˚ Rise time 70 20 Ambient temperature Sig.IN int 80 Relative sensitivity S (%) Ma 90 0 , 40 tf (µs) 0 Fall time 10 –2 – 40 ce /D isc on tin ue Collector photo current Collector photo current 60 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Collector photo current M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (mW) 120 1 10 ICE(L) (mA) 10 10 –2 VCC = 10V Ta = 25˚C 10 –1 Collector photo current 1 10 ICE(L) (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. 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