PNA2W01M

PNA2W01M

  • 厂商:

    NAIS(松下)

  • 封装:

    插件

  • 描述:

    NPN PHOTOTRANS 800NM DOUBLE END

  • 数据手册
  • 价格&库存
PNA2W01M 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Darlington Phototransistors PNA2W01M (PN207) Silicon planar type For optical control systems  Features M Di ain sc te on na tin nc ue e/ d  High sensitivity  Easy to combine with red and infrared light emitting diodes  Small size designed for easier mounting to printed circuit board  Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-emitter voltage (Base open) VCEO 20 V Emitter-collector voltage (Base open) VECO 5 V IC 30 mA PC 100 mW Topr –25 to +85 °C Tstg –30 to +100 °C Collector current Collector power dissipation Operating ambient temperature Storage temperature di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Parameter  Electrical-Optical Characteristics Ta = 25°C±3°C Parameter Symbol Photocurrent *1 IL Collector-emitter cutoff current (Base open) Collector-emitter saturation voltage VCE(sat) Peak sensitivity wavelength *1 ue λPD on tin Half-power angle θ ce /D isc Rise time *2 an Fall time *2 tr tf VCE = 10 V, L = 2 lx Min Typ 0.5 3.0 Max Unit mA VCE = 10 V 0.1 0.5 µA IL = 1 mA, L = 100 lx 0.7 1.5 V VCE = 10 V 800 nm The angle when the photocurrent is halved 18 ° 200 µs 200 µs VCC = 10 V, IL = 5 mA, RL = 100 W int en Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. This device is designed by disregarding radiation. *1:Source: Tungsten lamp (color temperature 2 856K) *2: Switching time measurement circuit Ma Note) 1. 2. 3. 4. ICEO Conditions Sig. in VCC (Input pulse) λPD = 800 nm 50 Ω Sig. out RL 90% 10% (Output pulse) tr tr : Rise time tf : Fall time tf Note) The part number in the parenthesis shows conventional part number. Publication date: October 2008 SHE00026CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). PNA2W01M PC  Ta IL  VCE 32 100 IL  L 103 Ta = 25°C T = 2 856 K VCE = 10 V Ta = 25°C T = 2 856 K 80 60 40 Photocurrent IL (mA) Photocurrent IL (mA) PC = 100 mW 24 L = 10 lx 16 5 lx 8 102 10 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (mW) 120 40 60 80 100 ICEO  Ta Photocurrent IL (mA) 10 1 10 −1 10 −2 0 20 40 60 80 20 10 −1 24 1 100 VCE = 10 V T = 2 856 K 0 ue ce /D 30° 40° 50° 60° 70° 80° 10 102 103 Illuminance L (lx) 1 105 isc 20° 40 80 ∆S  λ VCE = 10 V Ta = 25°C 80 60 40 20 0 200 120 400 600 800 1 000 1 200 Wavelength λ (nm) tr  IL 105 VCC = 10 V Ta = 25°C 104 Rise time tr (µs) Ma 40 20 Ambient temperature Ta (°C) an int en 60 Relative sensitivity ∆S (%) 80 10° 16 10 on tin Directive characteristics 12 IL  Ta 10 −1 −40 100 Ambient temperature Ta (°C) 0° 100 8 102 VCE = 10 V 10 −3 −20 4 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 102 0 Relative sensitivity ∆S (%) 20 2 lx 1 lx tf  IL VCC = 10 V Ta = 25°C 104 RL = 1 kΩ 103 500 Ω 100 Ω 102 Fall time tf (µs) 0 0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 −20 Collector-emitter cutoff current (Base open) ICEO (µA) 1 20 RL = 1 kΩ 103 500 Ω 100 Ω 102 90° 10 10 −2 10 −1 1 Photocurrent IL (mA) 2 SHE00026CED 10 10 10 −2 10 −1 1 Photocurrent IL (mA) 10  Pin name 1: Collector 2: Emitter int an en ue on tin isc ce /D di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Ma M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). PNA2W01M  Package (Unit: mm) LPDLTN2S0001 SHE00026CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es ne ain ain foll htt visit d d te te ow p:/ fo d /w llo is isc nan nan ing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i / on . (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. Pl ea Ma int en an ce /D isc on tin ue 20080805
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