UNR211E00L

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing 2.8+0.2 –0.3 M Di ain sc te on na tin nc ue e/ d ■ Features 1.50+0.25 –0.05 3 ■ Resistance by Part Number ce /D isc on tin ue 0 to 0.1 1.1+0.3 –0.1 (R2)  10 kΩ 22 kΩ 47 kΩ 47 kΩ    5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 10 kΩ 4.7 kΩ 47 kΩ 47 kΩ 47 kΩ 2.2 kΩ 22 kΩ 1.1+0.2 –0.1 10˚ Marking Symbol (R1) (UN2110) 6L 47 kΩ (UN2111) 6A 10 kΩ (UN2112) 6B 22 kΩ (UN2113) 6C 47 kΩ (UN2114) 6D 10 kΩ (UN2115) 6E 10 kΩ (UN2116) 6F 4.7 kΩ (UN2117) 6H 22 kΩ (UN2118) 6I 0.51 kΩ (UN2119) 6K 1 kΩ (UN211D) 6M 47 kΩ (UN211E) 6N 47 kΩ (UN211F) 6O 4.7 kΩ (UN211H) 6P 2.2 kΩ (UN211L) 6Q 4.7 kΩ (UN211M) EI 2.2 kΩ (UN211N) EW 4.7 kΩ (UN211T) EY 22 kΩ (UN211V) FC 2.2 kΩ (UN211Z) FE 4.7 kΩ an • UNR2110 • UNR2111 • UNR2112 • UNR2113 • UNR2114 • UNR2115 • UNR2116 • UNR2117 • UNR2118 • UNR2119 • UNR211D • UNR211E • UNR211F • UNR211H • UNR211L • UNR211M • UNR211N • UNR211T • UNR211V • UNR211Z di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 2.90+0.20 –0.05 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Internal Connection R1 B C R2 E int en ■ Absolute Maximum Ratings Ta = 25°C Parameter Rating Unit VCBO −50 V Collector-emitter voltage (Base open) Ma Symbol Collector-base voltage (Emitter open) VCEO −50 V Collector current IC −100 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00006CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). UNR211x Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base IEBO VEB = −6 V, IC = 0 − 0.01 mA UNR2110/2115/2116/2117 Conditions Min Typ Max V V − 0.1 − 0.1 (Collector open) UNR2112/2114/211D/ 211E/211M/211N/211T − 0.2 M Di ain sc te on na tin nc ue e/ d cutoff current UNR2113 − 0.4 UNR2111 − 0.5 UNR2119 UNR2118/211L/211V Forward current UNR211V transfer ratio UNR2111 UNR211Z −2.0 6 20  30 60 60 UNR2113/2114/211M UNR211N/211T 200 80 80 UNR2110*/2115*/2116*/2117* Collector-emitter saturation voltage 400 160 VCE(sat) 460 IC = −10 mA, IB = − 0.3 mA − 0.25 V IC = −10 mA, IB = −1.5 mA UNR211V VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ ce /D isc on tin ue Output voltage high-level UNR2113 UNR211D UNR211E an en int Ma UNR2118 V − 0.2 V VCC = −5 V, VB = −10 V, RL = 1 kΩ VCC = −5 V, VB = −6 V, RL = 1 kΩ VCB = −10 V, IE = 1 mA, f = 200 MHz 80 VCB = −10 V, IE = 2 mA, f = 200 MHz 150 −30% R1 UNR2119 −4.9 VCC = −5 V, VB = −3.5 V, RL = 1 kΩ fT UNR2114/2119/211E 211F/211H Input resistance −1.5 35 UNUNR2112/211E Transition frequency −1.0 20 UNR2119/211D/211F/211H Output voltage low-level VCE = −10 V, IC = −5 mA hFE UNR2118/211L µA di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. UNR211Z UNR211F/211H Unit 0.51 MHz +30% kΩ 1.0 UNR211H/211M/211V 2.2 UNR2116/211F/211L/211N/211Z 4.7 UNR2111/2114/2115 10 UNR2112/2117/211T 22 UNR2110/2113/211D/211E 47 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification 2 Rank Q R S No-rank hFE 160 to 260 210 to 340 290 to 460 160 to 460 SJH00006CED This product complies with the RoHS Directive (EU 2002/95/EC). UNR211x Series ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C Parameter Symbol Resistance ratio UNR211M Conditions Min Typ R1/R2 Max Unit  0.047 UNR211N 0.1 UNR2118/2119 0.08 0.10 UNR211Z 0.12 0.21 0.17 M Di ain sc te on na tin nc ue e/ d UNR2114 UNR211H 0.17 UNR211T UNR211F 0.37 UNR2111/2112/2113/211L UNR211E UNR211D 0.25 0.22 0.27 0.47 0.47 0.57 1.0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. UNR211V 0.21 0.8 1.0 1.2 1.70 2.14 2.60 3.7 4.7 5.7 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT  Ta 200 150 100 ue 50 40 80 120 160 Ambient temperature Ta (°C) an Characteristics charts of UNR2110 VCE(sat)  IC en IC  VCE int −120 Collector current IC (mA) Ma Ta = 25°C IB = −1.0 mA − 0.9 mA −100 − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −60 − 0.2 mA −40 − 0.1 mA −20 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) −100 hFE  IC IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 −0.1 400 −25°C −1 −10 Collector current IC (mA) SJH00006CED VCE = –10 V Forward current transfer ratio hFE 0 Collector-emitter saturation voltage VCE(sat) (V) 0 ce /D isc on tin Total power dissipation PT (mW) 250 −100 300 Ta = 75°C 200 25°C −25°C 100 0 −1 −10 −100 −1 000 Collector current IC (mA) 3 This product complies with the RoHS Directive (EU 2002/95/EC). UNR211x Series IO  VIN 4 3 VO = −5 V Ta = 25°C −103 −100 Input voltage VIN (V) Output current IO (µA) 5 VIN  IO −104 f = 1 MHz IE = 0 Ta = 25°C −102 VO = − 0.2 V Ta = 25°C −10 −1 M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 6 2 −10 −1 − 0.4 −100 IC  VCE −1.0 − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 − 0.2 mA − 0.1 mA −6 −8 −10 −12 Collector-emitter voltage VCE (V) an Cob  VCB int en 6 f = 1 MHz IE = 0 Ta = 25°C 4 −1 3 2 Ta = 75°C 25°C − 0.1 −25°C − 0.01 − 0.1 −1 −10 −10 −100 hFE  IC 160 Ta = 75°C VCE = −10 V −25°C 80 40 0 −1 −100 25°C 120 −10 −100 −1 000 Collector current IC (mA) Collector current IC (mA) IO  VIN −104 Output current IO (µA) Ma 5 −1 Output current IO (mA) −10 ce /D isc on tin −4 − 0.01 − 0.1 VO = −5 V Ta = 25°C −103 −102 −10 VIN  IO −100 Input voltage VIN (V) − 0.8 mA Collector-emitter saturation voltage VCE(sat) (V) − 0.9 mA −2 −1.4 IC / IB = 10 ue Ta = 25°C −120 0 −1.2 VCE(sat)  IC −100 IB = −1.0 mA Collector current IC (mA) − 0.8 Input voltage VIN (V) −160 0 − 0.6 Forward current transfer ratio hFE −1 Characteristics charts of UNR2111 Collector output capacitance C (pF) (Common base, input open circuited) ob − 0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 − 0.1 Collector-base voltage VCB (V) VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 4 −10 1 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00006CED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 This product complies with the RoHS Directive (EU 2002/95/EC). UNR211x Series Characteristics charts of UNR2112 IC  VCE VCE(sat)  IC −100 − 0.5mA −80 IC / IB = 10 −10 −1 VCE = −10 V 300 Ta = 75°C M Di ain sc te on na tin nc ue e/ d − 0.4mA hFE  IC 400 Forward current transfer ratio hFE Ta = 25°C IB = −1.0 mA − 0.9mA − 0.8mA − 0.7mA − 0.6mA −120 Collector current IC (mA) Collector-emitter saturation voltage VCE(sat) (V) −160 − 0.2mA − 0.1mA −2 0 −4 −6 −8 −10 − 0.01 − 0.1 −12 Output current IO (µA) 4 3 2 −1 −10 −100 Characteristics charts of UNR2113 en an IC  VCE Ma int IB = −1.0 mA Collector current IC (mA) −120 Ta = 25°C − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA −80 − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) − 0.6 − 0.8 −1.0 −1.2 −1.4 − 0.1 − 0.01 − 0.1 Ta = 75°C − 0.1 −25°C Collector current IC (mA) SJH00006CED −10 −100 hFE  IC −1 −10 −1 400 IC / IB = 10 −1 VO = − 0.2 V Ta = 25°C Output current IO (mA) −10 − 0.01 − 0.1 VIN  IO −1 VCE(sat)  IC 25°C −1 000 −10 Input voltage VIN (V) −100 −100 −100 VO = −5 V Ta = 25°C −10 −1 − 0.4 −10 Collector current IC (mA) −102 Collector-emitter saturation voltage VCE(sat) (V) Collector-base voltage VCB (V) −160 0 −1 −100 −103 ue 1 0 − 0.1 −10 IO  VIN f = 1 MHz IE = 0 Ta = 25°C 5 −1 −104 ce /D isc on tin Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 25°C −25°C 100 Collector current IC (mA) Collector-emitter voltage VCE (V) 6 −25°C Input voltage VIN (V) 0 − 0.1 VCE = −10 V Forward current transfer ratio hFE −40 Ta = 75°C 25°C di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. − 0.3mA 200 −100 Ta = 75°C 300 25°C 200 −25°C 100 0 −1 −10 −100 −1 000 Collector current IC (mA) 5 This product complies with the RoHS Directive (EU 2002/95/EC). UNR211x Series IO  VIN Output current IO (µA) 4 3 −100 VO = −5 V Ta = 25°C −103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN  IO −104 −102 VO = − 0.2 V Ta = 25°C −10 −1 M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 6 2 −10 −1 − 0.4 −100 IC  VCE −1.0 −80 − 0.4 mA − 0.3 mA − 0.2 mA −40 − 0.1 mA −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) an Cob  VCB int en 6 f = 1 MHz IE = 0 Ta = 25°C 4 −1 Ta = 75°C 3 2 25°C − 0.1 −1 −10 −100 hFE  IC 400 IC / IB = 10 VCE = −10 V 300 Ta = 75°C 200 25°C −25°C 100 −25°C − 0.01 − 0.1 −1 −10 0 −1 −100 −10 −100 −1 000 Collector current IC (mA) Collector current IC (mA) IO  VIN −104 Output current IO (µA) Ma 5 − 0.01 − 0.1 Output current IO (mA) −10 ce /D isc on tin −2 0 −1.4 VO = −5 V Ta = 25°C −103 VIN  IO −1 000 VO = − 0.2 V Ta = 25°C −100 Input voltage VIN (V) − 0.5 mA Collector-emitter saturation voltage VCE(sat) (V) − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −120 ue IB = −1.0 mA −1.2 VCE(sat)  IC −100 Ta = 25°C Collector current IC (mA) − 0.8 Input voltage VIN (V) −160 0 − 0.6 Forward current transfer ratio hFE −1 Characteristics charts of UNR2114 Collector output capacitance C (pF) (Common base, input open circuited) ob − 0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 − 0.1 Collector-base voltage VCB (V) −102 −10 −10 −1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 6 −10 1 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00006CED −1.4 − 0.1 − 0.1 −1 −10 Output current IO (mA) −100 This product complies with the RoHS Directive (EU 2002/95/EC). UNR211x Series Characteristics charts of UNR2115 IC  VCE VCE(sat)  IC −100 − 0.9 mA − 0.8 mA − 0.7 mA −120 − 0.6 mA − 0.5 mA − 0.4 mA IC / IB = 10 VCE = −10 V −10 −1 300 Ta = 75°C M Di ain sc te on na tin nc ue e/ d −80 hFE  IC 400 Forward current transfer ratio hFE Ta = 25°C IB = −1.0 mA Collector current IC (mA) Collector-emitter saturation voltage VCE(sat) (V) −160 − 0.2 mA −40 − 0.1 mA −4 −6 −8 −10 Output current IO (µA) 4 3 2 −1 −10 −100 Collector-base voltage VCB (V) Characteristics charts of UNR2116 −10 int Ma IB = −1.0 mA Collector current IC (mA) −120 Ta = 25°C − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA − 0.2 mA −40 − 0.1 mA 0 0 −2 −4 −6 −8 − 0.6 − 0.8 −1.0 −10 −12 Collector-emitter voltage VCE (V) −1.2 −1.4 VIN  IO VO = − 0.2 V Ta = 25°C −1 − 0.1 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) hFE  IC 400 IC / IB = 10 −10 −1 Ta = 75°C − 0.01 − 0.1 −1 000 −10 VCE(sat)  IC 25°C − 0.1 −100 −100 Input voltage VIN (V) −100 Collector-emitter saturation voltage VCE(sat) (V) en an IC  VCE −160 VO = −5 V Ta = 25˚C −102 −1 − 0.4 −10 Collector current IC (mA) −103 ue 1 0 − 0.1 0 −1 −100 IO  VIN f = 1 MHz IE = 0 Ta = 25°C 5 −10 −104 ce /D isc on tin Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 6 −1 Collector current IC (mA) Collector-emitter voltage VCE (V) −25°C −25°C − 0.01 −0.1 −12 25°C 100 Input voltage VIN (V) −2 0 − 0.1 VCE = −10 V Forward current transfer ratio hFE 0 Ta = 75°C 25°C 200 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. − 0.3 mA 300 Ta = 75°C 200 25°C −25°C 100 −25°C −1 −10 Collector current IC (mA) SJH00006CED −100 0 −1 −10 −100 −1 000 Collector current IC (mA) 7 This product complies with the RoHS Directive (EU 2002/95/EC). UNR211x Series IO  VIN f = 1 MHz IE = 0 Ta = 25°C 3 −100 Input voltage VIN (V) 4 VO = −5 V Ta = 25°C −103 Output current IO (µA) 5 VIN  IO −104 −102 VO = − 0.2 V Ta = 25°C −10 −1 M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 6 2 −10 −1 − 0.4 −100 − 0.2 mA −20 − 0.1 mA −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) an Cob  VCB int en 6 f = 1 MHz IE = 0 Ta = 25°C 4 3 2 Ta = 75°C 25°C − 0.1 −25°C − 0.01 − 0.1 −1 −10 −10 −100 hFE  IC VCE = −10 V 300 Ta = 75°C 200 25°C 100 0 −1 −100 Collector current IC (mA) −25°C −10 −100 −1 000 Collector current IC (mA) IO  VIN −104 −1 400 IC / IB = 10 −1 Output current IO (µA) Ma 5 − 0.01 − 0.1 Output current IO (mA) −10 ce /D isc on tin −2 −1.4 Forward current transfer ratio hFE Collector current IC (mA) − 0.3 mA −40 0 −1.2 VO = −5 V Ta = 25°C −103 −102 −10 VIN  IO −100 Input voltage VIN (V) IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA −60 0 −1.0 VCE(sat)  IC Ta = 25°C −80 − 0.8 −100 ue IC  VCE −120 −100 − 0.6 Input voltage VIN (V) Characteristics charts of UNR2117 Collector output capacitance C (pF) (Common base, input open circuited) ob − 0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. −1 Collector-emitter saturation voltage VCE(sat) (V) 0 − 0.1 Collector-base voltage VCB (V) VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 −0.1 −1 −10 −100 Collector-base voltage VCB (V) 8 −10 1 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00006CED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 This product complies with the RoHS Directive (EU 2002/95/EC). UNR211x Series Characteristics charts of UNR2118 IC  VCE VCE(sat)  IC −100 Ta = 25°C Collector current IC (mA) −200 IB = − 1.0 mA − 0.9 mA −160 − 0.8 mA − 0.7 mA IC / IB = 10 −10 −1 VCE = −10 V 120 M Di ain sc te on na tin nc ue e/ d −120 hFE  IC 160 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) −240 −80 −40 − 0.2 mA − 0.1 mA −4 −6 −8 −10 Collector-emitter voltage VCE − 0.01 − 0.1 −12 Output current IO (µA) 4 3 2 −1 −10 −100 Collector-base voltage VCB (V) Characteristics charts of UNR2119 −10 Ta = 25°C IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA −160 −120 −80 − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA − 0.2 mA − 0.1 mA −40 0 0 −2 −4 −6 −8 −10 − 0.8 −1.0 −12 Collector-emitter voltage VCE (V) −1.2 −1.4 VIN  IO VO = − 0.2 V Ta = 25°C −1 − 0.1 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) hFE  IC 160 IC / IB = 10 −10 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 −1 000 −10 VCE(sat)  IC −1 −100 −100 Input voltage VIN (V) −100 Ma int Collector current IC (mA) −200 VO = −5 V Ta = 25°C − 0.6 −10 Collector current IC (mA) −102 −1 − 0.4 Collector-emitter saturation voltage VCE(sat) (V) en an IC  VCE −240 0 −1 −100 −103 ue 1 0 − 0.1 −10 IO  VIN f = 1 MHz IE = 0 Ta = 25°C 5 −1 −104 ce /D isc on tin Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 6 40 Collector current IC (mA) (V) Input voltage VIN (V) −2 0 25°C −25°C −25°C VCE = −10 V Forward current transfer ratio hFE 0 25°C − 0.1 Ta = 75°C 80 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA Ta = 75°C 120 Ta = 75°C 80 25°C −25°C 40 −25°C −1 −10 Collector current IC (mA) SJH00006CED −100 0 −1 −10 −100 −1 000 Collector current IC (mA) 9 This product complies with the RoHS Directive (EU 2002/95/EC). UNR211x Series IO  VIN f = 1 MHz IE = 0 Ta = 25°C 3 −100 Input voltage VIN (V) 4 VO = −5 V Ta = 25°C −103 Output current IO (µA) 5 VIN  IO −104 −102 VO = −0.2 V Ta = 25°C −10 −1 M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 6 2 −10 −1 − 0.4 −100 − 0.3 mA − 0.2 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA −20 − 0.1 mA −10 −2 0 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Cob  VCB int en an 6 f = 1 MHz IE = 0 Ta = 25°C 4 − 0.01 − 0.1 −1 Ta = 75°C 3 2 25°C − 0.1 −1 −10 −100 Output current IO (mA) hFE  IC 160 IC / IB = 10 VCE = −10 V Ta = 75°C 120 25°C −25°C 80 40 −25°C − 0.01 − 0.1 −1 −10 0 −1 −100 −10 −100 −1 000 Collector current IC (mA) Collector current IC (mA) IO  VIN −104 Output current IO (µA) Ma 5 −1.4 −10 ce /D isc on tin 0 −1.2 VO = −5 V Ta = 25°C −103 −102 −10 VIN  IO −100 Input voltage VIN (V) Ta = 25˚C ue Collector current IC (mA) −100 −40 −30 −1.0 VCE(sat)  IC IB = − 1.0 mA − 0.9 mA − 0.8 mA −50 − 0.8 Forward current transfer ratio hFE IC  VCE −60 − 0.6 Input voltage VIN (V) Characteristics charts of UNR211D Collector output capacitance C (pF) (Common base, input open circuited) ob − 0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. −1 Collector-emitter saturation voltage VCE(sat) (V) 0 − 0.1 Collector-base voltage VCB (V) VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 10 −10 1 −1 −1.5 −2.0 −2.5 −3.0 −3.5 Input voltage VIN (V) SJH00006CED −4.0 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 This product complies with the RoHS Directive (EU 2002/95/EC). UNR211x Series Characteristics charts of UNR211E IC  VCE Collector-emitter saturation voltage VCE(sat) (V) IB = −1.0 mA Ta = 25°C − 0.9 mA − 0.8 mA − 0.7 mA −50 −40 − 0.3 mA −30 − 0.2 mA hFE  IC 400 IC / IB = 10 −10 −1 VCE = −10 V 300 M Di ain sc te on na tin nc ue e/ d Collector current IC (mA) VCE(sat)  IC −100 Forward current transfer ratio hFE −60 − 0.1 mA −10 −2 0 −4 −6 −8 −10 Output current IO (µA) 2 −10 −100 Characteristics charts of UNR211F en an IC  VCE int Ma Collector current IC (mA) Ta = 25°C IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −160 −120 − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 0 − 0.2 mA 0 −2 −4 −6 −8 − 0.1 mA −10 −12 Collector-emitter voltage VCE (V) 25°C −25°C VO = −5 V Ta = 25°C −2.0 −2.5 −3.0 −3.5 −1 000 −4.0 VIN  IO VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 − 0.01 − 0.1 −1 −10 −100 Output current IO (mA) VCE(sat)  IC hFE  IC 160 IC / IB = 10 −10 −1 Ta = 75°C 25°C − 0.1 − 0.01 − 0.1 −100 −100 Input voltage VIN (V) −100 −10 Collector current IC (mA) −10 −1 −1.5 Collector-emitter saturation voltage VCE(sat) (V) Collector-base voltage VCB (V) −200 0 −1 −100 −102 ue 1 −240 −10 −103 ce /D isc on tin Collector output capacitance C (pF) (Common base, input open circuited) ob 3 Ta = 75°C 100 IO  VIN 4 −1 −1 −104 f = 1 MHz IE = 0 Ta = 25°C 0 − 0.1 200 Collector current IC (mA) Cob  VCB 5 −25°C − 0.01 − 0.1 −12 Collector-emitter voltage VCE (V) 6 − 0.1 Input voltage VIN (V) 0 25°C VCE = −10 V Forward current transfer ratio hFE −20 Ta = 75°C di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. − 0.6 mA − 0.5 mA − 0.4 mA 120 Ta = 75°C 25°C 80 −25°C 40 −25°C −1 −10 Collector current IC (mA) SJH00006CED −100 0 −1 −10 −100 −1 000 Collector current IC (mA) 11 This product complies with the RoHS Directive (EU 2002/95/EC). UNR211x Series IO  VIN Output current IO (µA) 4 3 −100 VO = −5 V Ta = 25°C −103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN  IO −104 −102 VO = − 0.2 V Ta = 25°C −10 −1 M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 6 2 −10 −1 − 0.4 −100 IC  VCE − 0.4 mA −60 − 0.3 mA −40 − 0.2 mA −20 − 0.1 mA −6 −8 −10 −12 Collector-emitter voltage VCE (V) Cob  VCB en int 25°C −0.1 −25°C 3 2 −10 −100 −1 000 VIN  IO VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 −1 −10 −100 Collector-base voltage VCB (V) − 0.01 − 0.1 −1 −10 Output current IO (mA) SJH00006CED −10 −100 hFE  IC VCE = −10 V 200 160 Ta = 75°C 120 25°C 80 −25°C 40 0 −0.1 −1 −10 Collector current IC (mA) Collector current IC (mA) −100 −1 240 IC / IB = 10 Ta = 75°C −0.01 −1 Input voltage VIN (V) 4 f = 1 MHz IE = 0 Ta = 25°C Ma 5 an 6 − 0.01 − 0.1 Output current IO (mA) −1 ce /D isc on tin −4 −1.4 Forward current transfer ratio hFE Collector current IC (mA) IB = − 0.5 mA −2 −1.2 −10 ue Ta = 25°C 0 −1.0 −100 −100 0 − 0.8 VCE(sat)  IC −120 −80 − 0.6 Input voltage VIN (V) Characteristics charts of UNR211H Collector output capacitance C (pF) (Common base, input open circuited) ob − 0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. −1 Collector-emitter saturation voltage VCE(sat) (V) 0 − 0.1 Collector-base voltage VCB (V) 12 −10 1 −100 −100 This product complies with the RoHS Directive (EU 2002/95/EC). UNR211x Series Characteristics charts of UNR211L VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) −100 Ta = 25°C Collector current IC (mA) −200 −160 IB = −1.0 mA IC / IB = 10 −10 −1 VCE = −10 V 200 160 M Di ain sc te on na tin nc ue e/ d −120 hFE  IC 240 Forward current transfer ratio hFE IC  VCE −240 − 0.6 mA −80 − 0.4 mA −40 − 0.2 mA 0 0 –2 –4 –6 –8 –10 Collector-emitter voltage VCE Input voltage VIN (V) 4 25°C −25°C 40 −100 0 −1 −1 000 −10 −100 −1 000 Collector current IC (mA) 3 2 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 −10 −100 − 0.01 − 0.1 en an IC  VCE Ta = 25°C Ma int −240 −200 IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −160 −120 − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 − 0.2 mA − 0.1 mA 0 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) Characteristics charts of UNR211M −1 −10 −100 Output current IO (mA) VCE(sat)  IC −10 hFE  IC IC / IB = 10 −1 Ta = 75°C −0.1 25°C −25°C −0.01 −0.001 −1 500 Forward current transfer ratio hFE 0 −1 ue 1 ce /D isc on tin Collector output capacitance C (pF) (Common base, input open circuited) ob 80 Ta = 75°C VIN  IO Collector-base voltage VCB (V) Collector current IC (mA) −10 −100 f = 1 MHz IE = 0 Ta = 25°C 5 120 Collector current IC (mA) (V) Cob  VCB 6 −25°C − 0.1 − 0.01 −1 –12 Ta = 75°C 25°C di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. − 0.8 mA −10 −100 Collector current IC (mA) SJH00006CED −1 000 VCE = −10 V 400 300 Ta = 75°C 200 25°C −25°C 100 0 −1 −10 −100 −1 000 Collector current IC (mA) 13 This product complies with the RoHS Directive (EU 2002/95/EC). UNR211x Series IO  VIN VIN  IO −104 Output current IO (µA) 8 6 4 −103 −100 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C VO = −5 V Ta = 25°C −102 VO = − 0.2 V Ta = 25°C −10 −1 M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 10 −10 −1 −0.4 −100 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA − 0.2 mA − 0.1 mA −2 0 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) an Cob  VCB −0.01 −0.1 3 2 −1 −10 −100 Output current IO (mA) hFE  IC 300 IC / IB = 10 −1 VCE = −10 V 25°C −25°C 150 Ta = 75°C −0.1 Ta = 75°C 200 25°C 100 −25°C −0.01 −1 −10 −100 50 0 –1 −1 000 Collector current IC (mA) –10 –100 –1 000 Collector current IC (mA) IO  VIN −104 Output current IO (µA) 4 f = 1 MHz IE = 0 Ta = 25°C Ma 5 int en 6 −1.4 250 ce /D isc on tin 0 −1.2 Forward current transfer ratio hFE IB = −1.0 mA −10 ue Collector current IC (mA) Ta = 25°C −50 −1.0 VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) IC  VCE −100 −0.8 Input voltage VIN (V) −200 −150 −0.6 VO = −5 V Ta = 25°C VIN  IO −100 VO = − 0.2 V Ta = 25°C −10 −103 Input voltage VIN (V) −1 Characteristics charts of UNR211N Collector output capacitance C (pF) (Common base, input open circuited) ob −0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 −0.1 Collector-base voltage VCB (V) −102 −1 −0.1 –10 1 0 –1 –10 –100 Collector-base voltage VCB (V) 14 −10 2 –1 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 Input voltage VIN (V) SJH00006CED −1.6 −0.01 −0.1 −1 −10 Output current IO (mA) −100 This product complies with the RoHS Directive (EU 2002/95/EC). UNR211x Series Characteristics charts of UNR211T IC  VCE VCE(sat)  IC Ta = 25°C Collector current IC (mA) −150 IB = −1.0 mA –0.9 mA –0.8 mA –0.7 mA –0.6 mA –0.5 mA hFE  IC 300 IC / IB = 10 −1 VCE = −10 V 250 Ta = 75°C 200 25°C M Di ain sc te on na tin nc ue e/ d −100 −10 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) −200 − 0.1 − 0.3 mA − 0.2 mA − 0.1 mA −2 0 −4 −6 −8 −10 − 0.01 −1 −12 Collector-emitter voltage VCE (V) 0 −1 −1 000 −10 −100 −1 000 Collector current IC (mA) Input voltage VIN (V) −10 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 − 0.8 −1 −1.2 −1.4 − 0.01 − 0.1 ce /D isc on tin − 0.6 ue Output current IO (µA) −100 VIN  IO −102 −1 − 0.4 Input voltage VIN (V) Characteristics charts of UNR211V int Ma −10 Ta = 25°C IB = −1.0 mA − 0.9 mA − 0.8 mA −8 − 0.7 mA − 0.6 mA −6 − 0.5 mA −4 − 0.4 mA − 0.3 mA −2 − 0.2 mA − 0.1 mA 0 −2 −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) en an IC  VCE −12 Collector current IC (mA) −10 −100 VO = −5 V Ta = 25°C −103 0 50 Collector current IC (mA) IO  VIN −104 −25°C −25°C 100 −1 −10 −100 Output current IO (mA) VCE(sat)  IC −10 hFE  IC IC / IB = 10 −1 Ta = 75°C 25°C −0.1 −0.01 −1 12 Forward current transfer ratio hFE 0 25°C di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. − 0.4 mA −50 Ta = 75°C 150 −25°C −10 −100 Collector current IC (mA) SJH00006CED −1 000 10 VCE = −10 V Ta = 75°C 25°C 8 6 −25°C 4 2 0 –1 –10 –1 00 Collector current IC (mA) 15 This product complies with the RoHS Directive (EU 2002/95/EC). UNR211x Series IO  VIN VIN  IO −100 VO = −5 V Ta = 25°C VO = − 0.2 V Ta = 25°C −10 Input voltage VIN (V) −103 −102 −1 M Di ain sc te on na tin nc ue e/ d Output current IO (µA) −104 −0.1 −10 −1.0 −1.2 −0.01 −0.1 −1.4 Characteristics charts of UNR211Z IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −100 − 0.4 mA −50 − 0.3 mA − 0.2 mA − 0.1 mA −6 −8 −10 −12 Collector-emitter voltage VCE (V) an en 3 2 25°C −25°C − 0.01 −1 −10 −100 250 25°C 150 −25°C 100 50 −10 −100 −1 000 Collector current IC (mA) Collector current IC (mA) IO  VIN −104 Ta = 75°C 200 0 −1 −1 000 VCE = −10 V VO = –5 V Ta = 25°C −103 −102 −10 VIN  IO −100 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 1 0 −1 −10 −100 Collector-base voltage VCB (V) 16 − 0.1 Output current IO (µA) 4 int 5 f = 1 MHz IE = 0 Ta = 25°C Ma Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 6 Ta = 75°C ce /D isc on tin −4 IC / IB = 10 −1 hFE  IC 300 Forward current transfer ratio hFE Collector current IC (mA) −150 −2 −100 VCE(sat)  IC Ta = 25°C 0 −10 −10 ue IC  VCE −200 0 −1 Output current IO (mA) Input voltage VIN (V) Input voltage VIN (V) −0.8 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. −0.6 Collector-emitter saturation voltage VCE(sat) (V) −1 −0.4 –1 − 0.4 − 0.6 − 0.8 −1 −1.2 Input voltage VIN (V) SJH00006CED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.