UNR212X00L

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR212x Series (UN212x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing 2.8+0.2 –0.3 M Di ain sc te on na tin nc ue e/ d ■ Features 1.50+0.25 –0.05 3 ■ Resistance by Part Number 1.1+0.3 –0.1 (R2) 2.2 kΩ 4.7 kΩ 10 kΩ 10 kΩ 5 kΩ 4.6 kΩ 1.1+0.2 –0.1 10˚ Marking Symbol (R1) (UN2121) 7A 2.2 kΩ (UN2122) 7B 4.7 kΩ (UN2123) 7C 10 kΩ (UN2124) 7D 2.2 kΩ (UN212X) 7I 0.27 kΩ (UN212Y) 7Y 3.1 kΩ 0 to 0.1 • UNR2121 • UNR2122 • UNR2123 • UNR2124 • UNR212X • UNR212Y di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 2.90+0.20 –0.05 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Internal Connection ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Collector current IC −500 mA Total power dissipation PT 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ce /D isc on tin ue Parameter R1 C B R2 E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter en an Collector-base voltage (Emitter open) int Collector-emitter voltage (Base open) Ma Collector-base cutoff current (Emitter open) UNR212X Collector-emitter cutoff current (Base open) UNR212X Emitter-base UNR2121 Symbol Conditions Min VCBO IC = −10 µA, IE = 0 −50 VCEO IC = −2 mA, IB = 0 −50 ICBO VCB = −50 V, IE = 0 ICEO VCE = −50 V, IB = 0 IEBO VEB = −6 V, IC = 0 Typ Max V V −1.0 −1.0 µA − 0.5 −5 −2 (Collector open) UNR2123/2124 −1 transfer ratio µA − 0.1 cutoff current UNR2122/212X/212Y Forward current UNR2121 Unit hFE VCE = −10 V, IC = −5 mA UNR2122/212Y 40 mA  50 UNR2123/2124 60 UNR212X 20 Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00008CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). UNR212x Series ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C Parameter Symbol Collector-emitter saturation voltage VCE(sat) Conditions Min Typ IC = −100 mA, IB = −5 mA Max Unit − 0.25 V IC = −10 mA, IB = − 0.3 mA UNR212X/212Y Output voltage high-level VOH VCC = −5 V, VB = − 0.5 V, RL = 500 Ω Output voltage low-level VOL VCC = −5 V, VB = −3.5 V, RL = 500 Ω fT VCB = −10 V, IE = 50 mA, f = 200 MHz Input resistance UNR2121/2124 − 0.2 −30% R1 V 200 M Di ain sc te on na tin nc ue e/ d Transition frequency −4.9 UNR2122 2.2 0.27 R1/R2 UNR2124 UNR212X UNR212Y kΩ di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 10 UNR212X UNR212Y +30% 4.7 UNR2123 Resistance ratio V MHz 0.8 3.1 1.0 1.2 0.17 0.22 0.27 0.043 0.054 0.065 0.53 0.67 0.81 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart ue PT  Ta ce /D isc on tin 200 en an 150 int 100 Ma Total power dissipation PT (mW) 250 50 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJH00008CED This product complies with the RoHS Directive (EU 2002/95/EC). UNR212x Series Characteristics charts of UNR2121 IC  VCE VCE(sat)  IC −100 Ta = 25°C Collector current IC (mA) −200 IB = −1.0 mA −160 −80 − 0.4 mA IC / IB = 10 −10 −1 VCE = −10 V 300 Ta = 75°C 200 M Di ain sc te on na tin nc ue e/ d −120 − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA hFE  IC 400 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) −240 − 0.3 mA −6 −8 −10 −12 Output current IO (µA) 6 4 −10 −100 Collector-base voltage VCB (V) Characteristics charts of UNR2122 int Ma Collector current IC (mA) −250 IB = −1.0 mA − 0.9 mA −200 − 0.8 mA − 0.7 mA −150 − 0.6 mA − 0.5 mA − 0.4 mA − 0.3 mA −100 − 0.2 mA −50 − 0.1 mA 0 0 −2 −4 −6 −8 −10 − 0.6 − 0.8 −1.0 −12 Collector-emitter voltage VCE (V) −1.2 −1.4 VO = − 0.2 V Ta = 25°C −10 −1 − 0.01 − 0.1 −1 VCE(sat)  IC Ta = 75°C 25°C − 0.1 −25°C −10 −100 Collector current IC (mA) SJH00008CED −100 hFE  IC 160 IC / IB = 10 −1 −10 Output current IO (mA) −10 − 0.01 −1 −1 000 VIN  IO −100 Input voltage VIN (V) −100 Ta = 25°C −100 − 0.1 −10 −1 − 0.4 Collector-emitter saturation voltage VCE(sat) (V) en an IC  VCE −300 VO = −5 V Ta = 25°C −102 ue 2 −1 −10 Collector current IC (mA) −103 ce /D isc on tin Collector output capacitance C (pF) (Common base, input open circuited) ob 8 0 − 0.1 −1 000 −25°C IO  VIN −104 f = 1 MHz IE = 0 Ta = 25°C 10 −100 Collector current IC (mA) Cob  VCB 12 −10 0 −1 Input voltage VIN (V) −4 Collector-emitter voltage VCE (V) 25°C −25°C − 0.01 −1 −1 000 VCE = −10 V Forward current transfer ratio hFE −2 0 100 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. − 0.1 mA 0 25°C − 0.1 − 0.2 mA −40 Ta = 75°C Ta = 75°C 120 25°C 80 −25°C 40 0 −1 −10 −100 −1 000 Collector current IC (mA) 3 This product complies with the RoHS Directive (EU 2002/95/EC). UNR212x Series IO  VIN 16 12 VO = −5 V Ta = 25°C −103 −100 −102 VO = − 0.2 V Ta = 25°C −10 Input voltage VIN (V) Output current IO (µA) 20 VIN  IO −104 f = 1 MHz IE = 0 Ta = 25°C −1 M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 24 8 −10 −1 − 0.4 −100 IC  VCE − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −40 − 0.2 mA − 0.1 mA −4 −6 −8 −10 −12 Collector-emitter voltage VCE (V) Cob  VCB int en an 24 f = 1 MHz IE = 0 Ta = 25°C 16 −1 12 8 −10 −100 −1 Ta = 75°C 25°C hFE  IC 200 IC / IB = 10 − 0.1 Ta = 75°C VCE = −10 V 25°C 150 −25°C 100 50 −25°C − 0.01 −1 −10 −100 0 −1 −1 000 Collector current IC (mA) −10 −100 −1 000 Collector current IC (mA) IO  VIN −104 Output current IO (µA) Ma 20 − 0.01 − 0.1 Output current IO (mA) −10 ce /D isc on tin −2 0 −1.4 VO = −5 V Ta = 25°C −103 −102 VIN  IO −100 Input voltage VIN (V) −120 Collector-emitter saturation voltage VCE(sat) (V) IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA ue Ta = 25°C −160 −1.2 VCE(sat)  IC −200 Collector current IC (mA) −1.0 −100 −240 Collector output capacitance C (pF) (Common base, input open circuited) ob − 0.8 Input voltage VIN (V) Characteristics charts of UNR2123 0 − 0.6 Forward current transfer ratio hFE −1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 − 0.1 Collector-base voltage VCB (V) VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 −10 4 0 − 0.1 −1 −10 −100 Collector-base voltage VCB (V) 4 − 0.1 −10 4 −1 − 0.4 − 0.6 − 0.8 −1.0 −1.2 Input voltage VIN (V) SJH00008CED −1.4 − 0.01 − 0.1 −1 −10 Output current IO (mA) −100 This product complies with the RoHS Directive (EU 2002/95/EC). UNR212x Series Characteristics charts of UNR2124 VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) −100 Ta = 25°C Collector current IC (mA) −250 IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA −200 IC / IB = 10 −10 −1 VCE = −10 V 300 Ta = 75°C 200 M Di ain sc te on na tin nc ue e/ d −150 hFE  IC 400 Forward current transfer ratio hFE IC  VCE −300 − 0.5 mA − 0.4 mA − 0.2 mA −50 − 0.1 mA −4 −6 −8 −10 − 0.01 −1 −12 f = 1 MHz IE = 0 Ta = 25°C Output current IO (µA) 20 16 12 8 −10 −100 Collector-base voltage VCB (V) Characteristics charts of UNR212X int Ma −200 Collector current IC (mA) Ta = 25°C IB = −1.6 mA −160 −1.4 mA −1.2 mA −120 −1.0 mA − 0.8 mA −80 − 0.6 mA − 0.4 mA −40 − 0.2 mA 0 0 −2 −4 −6 −8 −10 −12 − 0.6 − 0.8 −1.0 Collector-emitter voltage VCE (V) −1.2 −1.4 −1 000 VIN  IO −100 VO = − 0.2 V Ta = 25°C −10 −1 − 0.01 − 0.1 VCE(sat)  IC −1 Ta = 75°C 25°C −10 – 25°C −100 Collector current IC (mA) SJH00008CED −10 −100 hFE  IC 240 IC / IB = 10 − 0.1 −1 Output current IO (mA) Input voltage VIN (V) −10 − 0.01 −1 −100 − 0.1 −10 −100 Collector-emitter saturation voltage VCE(sat) (V) en an IC  VCE VO = −5 V Ta = 25°C −102 −1 − 0.4 −10 Collector current IC (mA) −103 ue 4 −240 0 −1 −1 000 IO  VIN −104 ce /D isc on tin Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 24 −1 −100 Collector current IC (mA) Collector-emitter voltage VCE (V) 0 − 0.1 −10 Input voltage VIN (V) −2 0 100 −25°C Forward current transfer ratio hFE 0 25°C − 0.1 − 0.3 mA 25°C −25°C di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. −100 Ta = 75°C −1 000 VCE = −10 V 200 160 Ta = 75°C 120 25°C 80 −25°C 40 0 −1 −10 −100 −1 000 Collector current IC (mA) 5 This product complies with the RoHS Directive (EU 2002/95/EC). UNR212x Series VIN  IO −100 f = 1 MHz IE = 0 Ta = 25°C Input voltage VIN (V) 20 16 12 VO = − 0.2 V Ta = 25°C −10 −1 M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 24 8 − 0.1 4 − 0.01 − 0.1 −100 Characteristics charts of UNR212Y IB = −1.2 mA −160 −1.0 mA − 0.8 mA −120 − 0.6 mA −80 − 0.4 mA −40 − 0.2 mA −8 −10 −12 Collector-emitter voltage VCE (V) an en 12 8 25°C −25°C − 0.01 −1 −10 −100 −1 000 Collector current IC (mA) VIN  IO −100 VO = − 0.2 V Ta = 25°C −10 −1 − 0.1 0 −1 −10 −100 − 0.01 − 0.1 −1 −10 Output current IO (mA) SJH00008CED VCE = −10 V 200 Ta = 75°C 160 25°C 120 −25°C 80 40 0 −1 −10 −100 Collector current IC (mA) 4 Collector-base voltage VCB (V) 6 Ta = 75°C − 0.1 Input voltage VIN (V) 16 int 20 f = 1 MHz IE = 0 Ta = 25°C Ma Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 24 −1 ce /D isc on tin −6 IC / IB = 10 −10 hFE  IC 240 Forward current transfer ratio hFE Collector current IC (mA) −200 −4 −100 VCE(sat)  IC Ta = 25°C −2 −10 −100 ue IC  VCE −240 0 −1 Output current IO (mA) Collector-base voltage VCB (V) 0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. −10 Collector-emitter saturation voltage VCE(sat) (V) 0 −1 −100 −1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. 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