This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR221x Series (UN221x Series)
Silicon NPN epitaxial planar type
Unit: mm
0.40+0.10
–0.05
For digital circuits
0.16+0.10
–0.06
0.4±0.2
5˚
2
1
(0.95) (0.95)
1.9±0.1
(0.65)
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
• Mini type package allowing easy automatic insertion through tape
packing and magazine packing
2.8+0.2
–0.3
M
Di ain
sc te
on na
tin nc
ue e/
d
■ Features
1.50+0.25
–0.05
3
■ Resistance by Part Number
ce
/D
isc
on
tin
ue
0 to 0.1
1.1+0.3
–0.1
(R2)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
1.1+0.2
–0.1
10˚
Marking Symbol (R1)
(UN2210)
8L
47 kΩ
(UN2211)
8A
10 kΩ
(UN2212)
8B
22 kΩ
(UN2213)
8C
47 kΩ
(UN2214)
8D
10 kΩ
(UN2215)
8E
10 kΩ
(UN2216)
8F
4.7 kΩ
(UN2217)
8H
22 kΩ
(UN2218)
8I
0.51 kΩ
(UN2219)
8K
1 kΩ
(UN221D)
8M
47 kΩ
(UN221E)
8N
47 kΩ
(UN221F)
8O
4.7 kΩ
(UN221K)
8P
10 kΩ
(UN221L)
8Q
4.7 kΩ
(UN221M) EL
2.2 kΩ
(UN221N)
EX
4.7 kΩ
(UN221T)
EZ
22 kΩ
(UN221V)
FD
2.2 kΩ
(UN221Z)
FF
4.7 kΩ
an
• UNR2210
• UNR2211
• UNR2212
• UNR2213
• UNR2214
• UNR2215
• UNR2216
• UNR2217
• UNR2218
• UNR2219
• UNR221D
• UNR221E
• UNR221F
• UNR221K
• UNR221L
• UNR221M
• UNR221N
• UNR221T
• UNR221V
• UNR221Z
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2.90+0.20
–0.05
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
R1
B
C
R2
E
int
en
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Rating
Unit
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
Ma
Symbol
Collector-base voltage (Emitter open)
50
V
100
mA
PT
200
mW
Tj
150
°C
Tstg
−55 to +150
°C
Collector current
IC
Total power dissipation
Junction temperature
Storage temperature
Note) The part numbers in the parenthesis show conventional part number.
Publication date: May 2005
SJH00010DED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
50
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base
IEBO
VEB = −6 V, IC = 0
0.01
mA
Min
Typ
Max
V
0.1
cutoff current UNR2213
0.1
(Collector open) UNR2212/2214/221D/
221E/221M/221N/221T
0.2
0.4
UNR2211
0.5
UNR2219
UNR2218/221L/221V
Forward current UNR221V
transfer ratio
UNR2219/221D/221F
UNR2211
2.0
6
20
20
30
60
UNR2213/2214/221M
UNR221N/221T
200
80
80
UNR2210*/2215*/2216*/2217*
Collector-emitter saturation voltage
400
160
VCE(sat)
460
IC = 10 mA, IB = 0.3 mA
0.25
V
IC = 10 mA, IB = 1.5 mA
UNR221V
VOH
ue
Output voltage high-level
ce
/D
isc
on
tin
VOL
UNR2213/221K
UNR221D
UNR221E
an
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
en
V
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
0.2
V
VCC = 5 V, VB = 10 V, RL = 1 kΩ
VCC = 5 V, VB = 6 V, RL = 1 kΩ
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
−30%
R1
0.51
MHz
+30%
kΩ
1.0
Ma
UNR2219
4.9
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
fT
UNR2218
int
Input resistance
1.5
60
UNR221Z
Transition frequency
1.0
35
UNR2212/221E
Output voltage low-level
VCE = 10 V, IC = 5 mA
hFE
UNR2218/221K/221L
µA
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UNR221Z
UNR221F/221K
Unit
V
M
Di ain
sc te
on na
tin nc
ue e/
d
UNR2210/2215/2216/2217
Conditions
UNR221M/211V
UNR2216/221F/221L/
221N/221Z
2.2
4.7
UNR2211/2214/2215/221K
10
UNR2212/2217/221T
22
UNR2210/2213/221D/221E
47
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
2
Rank
Q
R
S
No-rank
hFE
160 to 260
210 to 340
290 to 460
160 to 460
SJH00010DED
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter
Symbol
Resistance ratio UNR221M
Conditions
Min
Typ
R1/R2
Max
Unit
0.047
UNR221N
0.1
UNR2218/2219
0.08
0.10
UNR221Z
0.12
0.21
0.17
0.21
M
Di ain
sc te
on na
tin nc
ue e/
d
UNR2214
UNR221T
UNR221F
0.37
UNR221V
0.8
UNR221K
UNR221E
UNR221D
0.47
0.47
0.57
1.0
1.0
1.2
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UNR2211/2212/2213/221L
0.25
1.70
2.13
2.60
1.70
2.14
2.60
3.7
4.7
5.7
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
200
150
100
ue
50
40
80
120
160
Ambient temperature Ta (°C)
an
Characteristics charts of UNR2210
VCE(sat) IC
int
en
IC VCE
60
IB = 1.0 mA
0.9 mA
0.8 mA
Ma
50
Collector current IC (mA)
Ta = 25°C
40
30
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.1 mA
20
10
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
100
hFE IC
400
IC / IB = 10
VCE = 10 V
Forward current transfer ratio hFE
0
Collector-emitter saturation voltage VCE(sat) (V)
0
ce
/D
isc
on
tin
Total power dissipation PT (mW)
250
10
1
Ta = 75°C
25°C
0.1
300
Ta = 75°C
25°C
200
−25°C
100
−25°C
0.01
0.1
0
1
10
Collector current IC (mA)
SJH00010DED
100
1
10
100
1 000
Collector current IC (mA)
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
IO VIN
Output current IO (µA)
4
3
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN IO
104
102
VO = 0.2 V
Ta = 25°C
10
1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
2
10
1
0.4
100
0.2 mA
40
0.1 mA
4
6
8
10
12
Collector-emitter voltage VCE (V)
an
en
1
3
2
Ta = 75°C
0.1
−25˚C
0.01
0.1
1
10
10
100
hFE IC
400
10
25°C
1
Output current IO (mA)
IC / IB = 10
Ta = 75°C
200
25°C
−25°C
100
0
100
VCE = 10 V
300
1
Collector current IC (mA)
10
100
1 000
Collector current IC (mA)
IO VIN
104
Output current IO (µA)
4
int
5
f = 1 MHz
IE = 0
Ta = 25°C
Ma
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
100
ce
/D
isc
on
tin
2
0.01
0.1
1.4
Forward current transfer ratio hFE
0.3 mA
0
1.2
103
102
VIN IO
100
VO = 5 V
Ta = 25°C
Input voltage VIN (V)
Collector current IC (mA)
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0
1.0
VCE(sat) IC
Ta = 25°C
80
0.8
ue
IC VCE
160
120
0.6
Input voltage VIN (V)
Characteristics charts of UNR2211
IB = 1.0 mA
0.9 mA
0.8 mA
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1
Collector-emitter saturation voltage VCE(sat) (V)
0
0.1
Collector-base voltage VCB (V)
VO = 0.2 V
Ta = 25°C
10
1
0.1
10
1
0
0.1
1
10
Collector-base voltage VCB (V)
4
0.1
10
1
100
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00010DED
1.4
0.01
0.1
1
10
Output current IO (mA)
100
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
Characteristics charts of UNR2212
IC VCE
VCE(sat) IC
IB = 1.0 mA
0.9 mA
0.8 mA
120
0.7 mA
0.6 mA
0.5 mA
0.4 mA
hFE IC
IC / IB = 10
400
VCE = 10 V
10
1
300
Ta = 75°C
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector current IC (mA)
Ta = 25°C
100
Forward current transfer ratio hFE
Collector-emitter saturation voltage VCE(sat) (V)
160
0.3 mA
0.2 mA
0.1 mA
0
2
4
6
8
10
12
Output current IO (µA)
3
2
10
100
Characteristics charts of UNR2213
en
an
IC VCE
int
Ma
Collector current IC (mA)
IB = 1.0 mA
Ta = 25°C
0.9 mA
0.8 mA
0.7 mA
0.6 mA
120
0.5 mA
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
−25°C
1
100
1 000
VIN IO
100
VO = 5 V
Ta = 25°C
10
VO = 0.2 V
Ta = 25°C
10
1
0.1
0.6
0.8
1.0
1.2
0.01
1.4
0.1
Input voltage VIN (V)
1
Ta = 75°C
0.1
−25°C
10
Collector current IC (mA)
SJH00010DED
100
hFE IC
10
1
10
400
IC / IB = 10
25°C
1
Output current IO (mA)
VCE(sat) IC
100
0.01
0.1
10
Collector current IC (mA)
102
1
0.4
Collector-emitter saturation voltage VCE(sat) (V)
Collector-base voltage VCB (V)
160
0
100
103
ue
1
1
10
IO VIN
4
0
0.1
1
104
f = 1 MHz
IE = 0
Ta = 25°C
5
0.01
0.1
ce
/D
isc
on
tin
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
25°C
100
Collector current IC (mA)
Collector-emitter voltage VCE (V)
6
−25°C
Input voltage VIN (V)
0
0.1
100
VCE = 10 V
Forward current transfer ratio hFE
40
Ta = 75°C
25°C
200
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80
Ta = 75°C
300
25°C
−25°C
200
100
0
1
10
100
1 000
Collector current IC (mA)
5
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
IO VIN
4
3
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
Output current IO (µA)
5
VIN IO
104
f = 1 MHz
IE = 0
Ta = 25°C
102
VO = 0.2 V
Ta = 25°C
10
1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
2
10
1
0.4
100
0.4 mA
0.3 mA
0.2 mA
4
6
8
10
12
Collector-emitter voltage VCE (V)
an
en
10
1
Ta = 75°C
3
2
25°C
0.1
1
10
100
Output current IO (mA)
hFE IC
400
IC / IB = 10
VCE = 10 V
300
Ta = 75°C
200
25°C
−25°C
100
−25°C
0.01
0.1
1
10
0
100
1
Collector current IC (mA)
10
100
1 000
Collector current IC (mA)
IO VIN
104
Output current IO (µA)
4
int
5
f = 1 MHz
IE = 0
Ta = 25°C
Ma
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
100
ce
/D
isc
on
tin
0.1 mA
2
0.01
0.1
1.4
Forward current transfer ratio hFE
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0
1.2
103
102
VIN IO
100
VO = 5 V
Ta = 25°C
Input voltage VIN (V)
Collector current IC (mA)
IB = 1.0 mA
0
1.0
VCE(sat) IC
Ta = 25°C
40
0.8
ue
IC VCE
160
80
0.6
Input voltage VIN (V)
Characteristics charts of UNR2214
120
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1
Collector-emitter saturation voltage VCE(sat) (V)
0
0.1
Collector-base voltage VCB (V)
VO = 0.2 V
Ta = 25°C
10
1
0.1
10
1
0
0.1
1
10
Collector-base voltage VCB (V)
6
0.1
10
1
100
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00010DED
1.4
0.01
0.1
1
10
Output current IO (mA)
100
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
Characteristics charts of UNR2215
IC VCE
VCE(sat) IC
120
0.7 mA
0.6 mA
0.5 mA
0.4 mA
hFE IC
400
IC / IB = 10
VCE = 10 V
10
300
Ta = 75°C
M
Di ain
sc te
on na
tin nc
ue e/
d
80
100
Forward current transfer ratio hFE
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
Collector current IC (mA)
Collector-emitter saturation voltage VCE(sat) (V)
160
0.2 mA
0.1 mA
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
Output current IO (µA)
4
3
2
1
10
100
Characteristics charts of UNR2216
en
an
IC VCE
int
Collector current IC (mA)
Ma
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
120
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
0
100
10
12
Collector-emitter voltage VCE (V)
−25°C
1
10
100
1 000
Collector current IC (mA)
VIN IO
100
VO = 5 V
Ta = 25°C
102
10
1
0.4
Collector-emitter saturation voltage VCE(sat) (V)
Collector-base voltage VCB (V)
160
10
103
ue
1
0
0.1
1
IO VIN
ce
/D
isc
on
tin
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
5
0.01
0.1
104
f = 1 MHz
IE = 0
Ta = 25°C
25°C
100
Collector current IC (mA)
Cob VCB
6
200
−25°C
Input voltage VIN (V)
0
Ta = 75°C
25°C
0.1
VO = 0.2 V
Ta = 25°C
10
1
0.1
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
VCE(sat) IC
100
10
100
hFE IC
400
IC / IB = 10
10
1
Ta = 75°C
25°C
0.1
1
Output current IO (mA)
VCE = 10 V
Forward current transfer ratio hFE
40
1
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0.3 mA
Ta = 75°C
300
25°C
−25°C
200
100
−25°C
0.01
0.1
1
10
Collector current IC (mA)
SJH00010DED
100
0
1
10
100
1 000
Collector current IC (mA)
7
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
IO VIN
Output current IO (µA)
4
3
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN IO
104
102
VO = 0.2 V
Ta = 25°C
10
1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
2
10
1
0.4
100
T = 25°C
0.4 mA
0.3 mA
0.2 mA
40
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
Cob VCB
1
en
int
3
2
1
10
100
Output current IO (mA)
hFE IC
400
IC / IB = 10
Ta = 75°C
25°C
0.1
VCE = 10 V
300
200
Ta = 75°C
25°C
−25°C
100
−25°C
0.01
0.1
1
10
0
100
1
Collector current IC (mA)
10
100
1 000
Collector current IC (mA)
IO VIN
104
Output current IO (µA)
4
f = 1 MHz
IE = 0
Ta = 25°C
Ma
5
an
6
0.01
0.1
1.4
10
ce
/D
isc
on
tin
0
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
100
ue
0.1 mA
0
1.2
103
102
VIN IO
100
VO = 5 V
Ta = 25°C
Input voltage VIN (V)
Collector current IC (mA)
80
20
1.0
VCE(sat) IC
a
IB =1 .0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
60
0.8
Forward current transfer ratio hFE
IC VCE
100
0.6
Input voltage VIN (V)
Characteristics charts of UNR2217
120
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Pl
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1
Collector-emitter saturation voltage VCE(sat) (V)
0
0.1
Collector-base voltage VCB (V)
VO = 0.2 V
Ta = 25°C
10
1
0.1
10
1
0
0.1
1
10
Collector-base voltage VCB (V)
8
0.1
10
1
100
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00010DED
1.4
0.01
0.1
1
10
Output current IO (mA)
100
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
Characteristics charts of UNR2218
VCE(sat) IC
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
160
hFE IC
160
IC / IB = 10
VCE = 10 V
10
120
Ta = 75°C
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector current IC (mA)
200
100
Forward current transfer ratio hFE
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
240
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
40
0.2 mA
0.1 mA
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
Output current IO (µA)
2
10
100
Characteristics charts of UNR2219
en
an
IC VCE
Ta = 25°C
Ma
int
Collector current IC (mA)
200
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
160
120
0.5 mA
0.4 mA
0.3 mA
80
40
0.2 mA
0.1 mA
0
0
2
4
6
8
100
1
10
12
Collector-emitter voltage VCE (V)
10
100
1 000
Collector current IC (mA)
VIN IO
100
VO = 5 V
Ta = 25°C
10
1
0.4
Collector-emitter saturation voltage VCE(sat) (V)
Collector-base voltage VCB (V)
240
10
102
ue
1
1
0
1
103
ce
/D
isc
on
tin
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
3
0
0.1
40
IO VIN
4
25°C
−25°C
−25°C
0.01
0.1
104
f = 1 MHz
IE = 0
Ta = 25°C
5
0.1
80
Collector current IC (mA)
Cob VCB
6
25°C
Input voltage VIN (V)
0
Ta = 75°C
VO = 0.2 V
Ta = 25°C
10
1
0.1
0.6
0.8
1.0
1.2
0.01
0.1
1.4
Input voltage VIN (V)
VCE(sat) IC
100
1
10
100
Output current IO (mA)
hFE IC
160
IC / IB = 10
VCE = 10 V
Forward current transfer ratio hFE
0
1
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120
10
1
Ta = 75°C
25°C
0.1
120
Ta = 75°C
80
25°C
−25°C
40
−25°C
0.01
0.1
0
1
10
Collector current IC (mA)
SJH00010DED
100
1
10
100
1 000
Collector current IC (mA)
9
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
IO VIN
Output current IO (µA)
4
3
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN IO
104
102
VO = 0.2 V
Ta = 25°C
10
1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
2
10
1
0.4
100
Collector-base voltage VCB (V)
Characteristics charts of UNR221D
15
0.2 mA
0.1 mA
10
8
10
12
an
Cob VCB
1
3
2
Ta = 75°C
25°C
0.1
−25°C
0.01
0.1
1
10
1
10
100
Output current IO (mA)
hFE IC
160
IC / IB = 10
VCE = 10 V
25°C
−25°C
80
40
0
100
Ta = 75°C
120
1
Collector current IC (mA)
10
100
1 000
Collector current IC (mA)
IO VIN
104
Output current IO (µA)
4
f = 1 MHz
IE = 0
Ta = 25°C
Ma
5
int
en
6
0.01
0.1
1.4
10
ce
/D
isc
on
tin
6
Collector-emitter voltage VCE (V)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
100
ue
5
4
1.2
103
102
10
VIN IO
100
VO = 5 V
Ta = 25°C
Input voltage VIN (V)
Collector current IC (mA)
20
2
1.0
VCE(sat) IC
Ta = 25°C
0.9 mA
0.8 mA 0.5 mA
0.7 mA
0.4 mA
25
0.6 mA
0.3 mA
IB = 1.0 mA
0
0.8
Forward current transfer ratio hFE
IC VCE
30
0
0.6
Input voltage VIN (V)
Collector-emitter saturation voltage VCE(sat) (V)
1
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0
0.1
VO = 0.2 V
Ta = 25°C
10
1
0.1
1
0
0.1
1
10
Collector-base voltage VCB (V)
10
0.1
10
1
100
1
1.5
2.0
2.5
3.0
3.5
Input voltage VIN (V)
SJH00010DED
4.0
0.01
0.1
1
10
Output current IO (mA)
100
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
Characteristics charts of UNR221E
VCE(sat) IC
IB = 1.0 mA 0.7 mA
Ta = 25°C
0.9 mA
0.6 mA
0.8 mA
40
0.3 mA 0.2 mA
0.4 mA
0.5 mA
0.1 mA
hFE IC
160
IC / IB = 10
VCE = 10 V
10
Ta = 75°C
120
25°C
−25°C
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector current IC (mA)
50
100
Forward current transfer ratio hFE
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
60
20
10
2
4
6
8
10
12
Output current IO (µA)
3
2
10
100
Characteristics charts of UNR221F
en
an
IC VCE
Ma
int
Collector current IC (mA)
Ta = 25°C
0.9 mA
0.8 mA
0.7 mA
0.6 mA
160
120
IB = 1.0 mA
0.5 mA
80
0.4 mA
0.3 mA
40
0.2 mA
0.1 mA
0
0
2
4
6
8
0
100
1
10
12
Collector-emitter voltage VCE (V)
10
100
1 000
Collector current IC (mA)
VIN IO
100
VO = 5 V
Ta = 25°C
102
VO = 0.2 V
Ta = 25°C
10
1
0.1
10
1
1.5
Collector-emitter saturation voltage VCE(sat) (V)
Collector-base voltage VCB (V)
200
10
103
ue
1
240
1
IO VIN
4
1
0.01
0.1
104
f = 1MHz
IE = 0
Ta = 25°C
0
0.1
40
−25°C
ce
/D
isc
on
tin
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
5
80
Collector current IC (mA)
Collector-emitter voltage VCE (V)
6
25°C
0.1
Input voltage VIN (V)
0
Ta = 75°C
2.0
2.5
3.0
3.5
0.01
0.1
4.0
VCE(sat) IC
100
10
100
hFE IC
160
IC / IB = 10
10
Ta = 75°C
1
1
Output current IO (mA)
Input voltage VIN (V)
VCE = 10 V
Forward current transfer ratio hFE
0
1
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30
25°C
0.1
120
Ta = 75°C
80
25°C
−25°C
40
−25°C
0.01
0.1
1
10
Collector current IC (mA)
SJH00010DED
100
0
1
10
100
1 000
Collector current IC (mA)
11
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
IO VIN
Output current IO (µA)
4
3
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN IO
104
102
VO = 0.2 V
Ta = 25°C
10
1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
2
10
1
0.4
100
160
IB = 1.2 mA
1.0 mA
0.8 mA
80
0.6 mA
0.4 mA
40
6
8
10
12
Collector-emitter voltage VCE (V)
an
en
int
5
Input voltage VIN (V)
4
3
2
10
1
25°C
Ta = 75°C
0.1
−25°C
0.01
1
10
100
1 000
Collector current IC (mA)
10
Collector-base voltage VCB (V)
100
VIN IO
VO = 0.2 V
Ta = 25°C
10
1
0.01
0.1
1
10
Output current IO (mA)
SJH00010DED
10
100
hFE IC
240
VCE = 10 V
200
160
Ta = 75°C
120
25°C
80
−25°C
40
0
1
10
100
Collector current IC (mA)
0.1
1
1
Output current IO (mA)
1
0
0.01
0.1
1.4
IC / IB = 10
100
f = 1 MHz
IE = 0
Ta = 25°C
Ma
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
100
ce
/D
isc
on
tin
0.2 mA
4
1.2
Forward current transfer ratio hFE
Collector current IC (mA)
200
2
1.0
VCE(sat) IC
Ta = 25°C
0
0.8
ue
IC VCE
240
0
0.6
Input voltage VIN (V)
Characteristics charts of UNR221K
120
di
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Pl
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pla m d m des
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co L a d t ty
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cy
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1
Collector-emitter saturation voltage VCE(sat) (V)
0
0.1
Collector-base voltage VCB (V)
12
0.1
10
1
100
1 000
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
Characteristics charts of UNR221L
VCE(sat) IC
Ta = 25°C
160
IB = 1.0 mA
0.8 mA
hFE IC
240
IC / IB = 10
10
VCE = 10 V
200
Ta = 75°C
160
120
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector current IC (mA)
200
100
Forward current transfer ratio hFE
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
240
0.6 mA
80
0.4 mA
40
0.2 mA
0
0
2
4
6
8
10
12
25°C
0.1
−25°C
0.01
10
100
−25°C
40
1 000
1
10
100
1 000
Collector current IC (mA)
VIN IO
100
f = 1 MHz
IE = 0
Ta = 25°C
Input voltage VIN (V)
4
3
2
VO = 0.2 V
Ta = 25°C
10
1
0.1
1
10
100
0.01
0.1
en
an
IC VCE
Ta = 25°C
Ma
int
240
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
200
160
0.5 mA
0.4 mA
0.3 mA
120
80
0.2 mA
40
0.1 mA
0
Collector-emitter saturation voltage VCE(sat) (V)
Characteristics charts of UNR221M
1
10
100
Output current IO (mA)
VCE(sat) IC
10
hFE IC
IC / IB = 10
1
Ta = 75°C
25°C
0.1
−25˚C
0.01
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
1
10
100
Collector current IC (mA)
SJH00010DED
1 000
VCE = 10 V
400
300
Ta = 75°C
25°C
200
−25°C
100
0
0.001
0
500
Forward current transfer ratio hFE
0
ue
1
Collector-base voltage VCB (V)
Collector current IC (mA)
25°C
80
0
1
ce
/D
isc
on
tin
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
5
Ta = 75°C
Collector current IC (mA)
Collector-emitter voltage VCE (V)
6
1
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cy
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120
1
10
100
1 000
Collector current IC (mA)
13
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
IO VIN
VIN IO
104
f = 1 MHz
IE = 0
Ta = 25°C
3
103
Input voltage VIN (V)
Output current IO (µA)
4
100
VO = 5 V
Ta = 25°C
102
VO = 0.2 V
Ta = 25°C
10
1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
5
2
0.4
100
1.0
1.2
0.01
1.4
0.1
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
0.2 mA
40
IC / IB = 10
1
0.1
Ta = 75°C
25°C
−25°C
4
6
8
10
12
Collector-emitter voltage VCE (V)
Cob VCB
int
en
an
6
Output current IO (µA)
4
10
3
2
100
hFE IC
VCE = 10 V
400
Ta = 75°C
320
25°C
240
−25°C
160
80
0
1 000
100
1
Collector current IC (mA)
10
100
1 000
Collector current IC (mA)
IO VIN
104
f = 1 MHz
IE = 0
Ta = 25°C
Ma
5
0.01
1
VIN IO
100
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
10
103
Input voltage VIN (V)
2
ce
/D
isc
on
tin
0
10
480
ue
0.1 mA
10
1
Output current IO (mA)
VCE(sat) IC
Ta = 25°C
Collector current IC (mA)
0.8
Forward current transfer ratio hFE
IC VCE
120
0.6
Input voltage VIN (V)
160
0
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life
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cy
on es
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sta
co fo
ge
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10
Collector-emitter saturation voltage VCE(sat) (V)
1
Characteristics charts of UNR221N
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
0.1
1
0
0.1
Collector-base voltage VCB (V)
102
10
1
0.1
1
0
1
10
Collector-base voltage VCB (V)
14
10
1
100
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00010DED
1.4
0.01
0.1
1
10
Output current IO (mA)
100
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
Characteristics charts of UNR221T
IC VCE
VCE(sat) IC
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
120
80
hFE IC
480
IC / IB = 10
1
VCE = 10 V
400
Ta = 75°C
320
25°C
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector current IC (mA)
Ta = 25°C
10
Forward current transfer ratio hFE
Collector-emitter saturation voltage VCE(sat) (V)
160
0.2 mA
40
0.1 mA
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
Output current IO (µA)
2
10
100
Characteristics charts of UNR221V
en
an
IC VCE
int
Ma
Collector current IC (mA)
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
80
0.6 mA
0.5 mA
40
0.4 mA
0
0
2
4
6
8
1 000
1
0.3 mA
0.2 mA
10
12
Collector-emitter voltage VCE (V)
0.8
1.0
1.2
Ta = 75°C
−25°C
240
Collector current IC (mA)
SJH00010DED
100
1 000
VCE = 10 V
200
160
Ta = 75°C
120
25°C
80
−25°C
40
0
100
10
hFE IC
25°C
10
1
Output current IO (mA)
IC / IB = 10
1
VO = 0.2 V
Ta = 25°C
0.1
0.01
0.1
1.4
1
0.01
VIN IO
1
VCE(sat) IC
0.1
1 000
10
Input voltage VIN (V)
10
100
100
10
0.6
10
Collector current IC (mA)
102
1
0.4
Collector-emitter saturation voltage VCE(sat) (V)
Collector-base voltage VCB (V)
120
100
103
ue
1
160
10
VO = 5 V
Ta = 25°C
ce
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Collector output capacitance
C (pF)
(Common base, input open circuited) ob
3
1
0
1
IO VIN
4
0
0.01
104
f = 1 MHz
IE = 0
Ta = 25°C
5
80
Collector current IC (mA)
IO VIN
6
−25°C
160
−25°C
Input voltage VIN (V)
0
25°C
Forward current transfer ratio hFE
0
Ta = 75°C
0.1
240
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1
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100
1 000
Collector current IC (mA)
15
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR221x Series
IO VIN
Output current IO (µA)
4
3
100
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN IO
104
102
VO = 0.2 V
Ta = 25°C
10
1
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Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
2
10
1
0.4
100
1.0
1.2
0.01
0.1
1.4
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
120
80
0.3 mA
0.2 mA
40
IC / IB = 10
1
Ta = 75°C
0.1
25°C
−25°C
4
6
8
10
12
Collector-emitter voltage VCE (V)
Cob VCB
an
int
4
Output current IO (µA)
Ma
5
10
100
3
2
100
hFE IC
VCE = 10 V
400
Ta = 75°C
320
240
25°C
−25°C
160
80
0
1
1 000
1
10
100
1 000
Collector current IC (mA)
Collector current IC (mA)
IO VIN
104
f = 1 MHz
IE = 0
Ta = 25°C
en
6
0.01
103
102
10
VIN IO
100
VO = 5 V
Ta = 25°C
Input voltage VIN (V)
2
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0
10
480
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0.1 mA
10
1
Output current IO (mA)
VCE(sat) IC
Ta = 25°C
Collector current IC (mA)
0.8
Forward current transfer ratio hFE
IC VCE
160
0
0.6
Input voltage VIN (V)
Characteristics charts of UNR221Z
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
0.1
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1
Collector-emitter saturation voltage VCE(sat) (V)
0
Collector-base voltage VCB (V)
VO = 0.2 V
Ta = 25°C
10
1
0.1
1
0
1
10
Collector-base voltage VCB (V)
16
10
1
100
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00010DED
1.4
0.01
0.1
1
10
Output current IO (mA)
100
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
M
Di ain
sc te
on na
tin nc
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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n.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
ea
Ma
int
en
an
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isc
on
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
