This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR411x Series (UN411x Series)
Silicon PNP epitaxial planar type
Unit: mm
4.0±0.2
2.0±0.2
■ Features
7.6
(0.8)
3.0±0.2
For digital circuits
(R1)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
(R2)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
ue
UNR4110 (UN4110)
UNR4111 (UN4111)
UNR4112 (UN4112)
UNR4113 (UN4113)
UNR4114 (UN4114)
UNR4115 (UN4115)
UNR4116 (UN4116)
UNR4117 (UN4117)
UNR4118 (UN4118)
UNR4119 (UN4119)
UNR411D (UN411D)
UNR411E (UN411E)
UNR411F (UN411F)
UNR411H (UN411H)
UNR411L (UN411L)
UNR411M
UNR411N
ce
/D
isc
on
tin
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
15.6±0.5
di
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■ Resistance by Part Number
(0.8)
M
Di ain
sc te
on na
tin nc
ue e/
d
0.75 max.
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
• New S type package, allowing supply with the radial taping
0.45+0.20
–0.10
0.45+0.20
–0.10
(2.5) (2.5)
1
2
0.7±0.1
3
1: Emitter
2: Collector
3: Base
NS-B1 Package
Internal Connection
R1
B
C
R2
E
■ Absolute Maximum Ratings Ta = 25°C
Parameter
an
Collector-base voltage (Emitter open)
Rating
Unit
VCBO
−50
V
VCEO
−50
V
IC
−100
mA
300
mW
150
°C
−55 to +150
°C
Ma
int
Collector current
en
Collector-emitter voltage (Base open)
Symbol
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00018DED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR411x Series
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−50
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
Emitter-base
IEBO
VEB = −6 V, IC = 0
− 0.01
mA
UNR4110/4115/4116/4117
Conditions
Min
Typ
Max
V
V
− 0.1
− 0.1
(Collector open) UNR4112/4114/411D/
411E/411M/411N
− 0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
cutoff current UNR4113
− 0.5
UNR411F/411H
−1.0
UNR4118/411L
Forward current UNR4118/411L
transfer ratio
VCE = −10 V, IC = −5 mA
hFE
UNR4119/411D/411F/411H
UNR4111
−1.5
−2.0
20
30
35
UNR4112/411E
60
UNR4113/4114/411M
UNR411N
UNR4110 */4115 */4116 */
4117 *
Collector-emitter saturation voltage
80
VCE(sat)
80
400
160
460
IC = −10 mA, IB = − 0.3 mA
Output voltage high-level
VOH
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
− 0.25
−4.9
V
V
− 0.2
V
VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
UNR4113
VCC = −5 V, VB = −10 V, RL = 1 kΩ
ue
UNR411D
ce
/D
isc
on
tin
UNR411E
Transition frequency
µA
di
p
Pl
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UNR4111
UNR4119
Unit
fT
Input resistance UNR4118
VCC = −5 V, VB = −6 V, RL = 1 kΩ
VCB = −10 V, IE = 1 mA, f = 200 MHz
−30%
R1
UNR4119
an
UNR411H/411M
en
UNR4116/411F/411L/411N
Ma
int
UNR4111/4114/4115
UNR4112/4117
80
0.51
MHz
+30%
kΩ
1.0
2.2
4.7
10
22
UNR4110/4113/411D/411E
47
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
2
Rank
Q
R
S
No-rank
hFE
160 to 260
210 to 340
290 to 460
160 to 460
SJH00018DED
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR411x Series
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter
Symbol
Resistance ratio UNR411M
Conditions
Min
Typ
R1/R2
Max
Unit
0.047
UNR411N
0.1
UNR4118/4119
0.08
0.10
0.12
0.17
0.21
0.25
UNR411H
0.17
0.22
0.27
M
Di ain
sc te
on na
tin nc
ue e/
d
UNR4114
0.37
0.47
0.57
UNR4111/4112/4113/411L
0.8
1.0
1.2
UNR411E
1.70
2.14
2.60
UNR411D
3.7
4.7
5.7
di
p
Pl
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UNR411F
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
Total power dissipation PT (mW)
400
300
200
40
80
120
160
Ambient temperature Ta (°C)
an
Characteristics charts of UNR4110
VCE(sat) IC
en
IC VCE
int
−120
Ta = 25°C
Collector current IC (mA)
Ma
IB = −1.0 mA
− 0.9 mA
−100
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
−80
− 0.4 mA
− 0.3 mA
−60
− 0.2 mA
−40
− 0.1 mA
−20
0
0
−2
−4
−6
−8
−10
Collector-emitter voltage VCE
−12
(V)
−100
hFE IC
−10
−1
Ta = 75°C
25°C
− 0.1
− 0.01
−0.1
400
IC / IB = 10
−25°C
−1
−10
Collector current IC (mA)
SJH00018DED
VCE = –10 V
Forward current transfer ratio hFE
0
Collector-emitter saturation voltage VCE(sat) (V)
0
ce
/D
isc
on
tin
ue
100
−100
300
Ta = 75°C
200
25°C
−25°C
100
0
−1
−10
−100
−1 000
Collector current IC (mA)
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR411x Series
IO VIN
4
3
VO = −5 V
Ta = 25°C
−103
−100
Input voltage VIN (V)
Output current IO (µA)
5
VIN IO
−104
f = 1 MHz
IE = 0
Ta = 25°C
−102
VO = − 0.2 V
Ta = 25°C
−10
−1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
2
−10
−1
− 0.4
−100
IC VCE
−1.0
− 0.7 mA
− 0.6 mA
− 0.5 mA
−80
− 0.4 mA
− 0.3 mA
−40
− 0.2 mA
− 0.1 mA
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
an
Cob VCB
int
en
6
f = 1 MHz
IE = 0
Ta = 25°C
4
−1
3
2
Ta = 75°C
25°C
− 0.1
−25°C
− 0.01
− 0.1
−1
−10
−10
−100
hFE IC
160
Ta = 75°C
VCE = −10 V
−25°C
80
40
0
−1
−100
25°C
120
Collector current IC (mA)
−10
−100
−1 000
Collector current IC (mA)
IO VIN
−104
Output current IO (µA)
Ma
5
−1
Output current IO (mA)
−10
ce
/D
isc
on
tin
−4
− 0.01
− 0.1
VO = −5 V
Ta = 25°C
−103
−102
−10
VIN IO
−100
Input voltage VIN (V)
− 0.8 mA
Collector-emitter saturation voltage VCE(sat) (V)
− 0.9 mA
−2
−1.4
IC / IB = 10
ue
Ta = 25°C
−120
0
−1.2
VCE(sat) IC
−100
IB = −1.0 mA
Collector current IC (mA)
− 0.8
Input voltage VIN (V)
−160
0
− 0.6
Forward current transfer ratio hFE
−1
Characteristics charts of UNR4111
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
− 0.1
di
p
Pl
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0
− 0.1
Collector-base voltage VCB (V)
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
1
0
− 0.1
−1
−10
−100
Collector-base voltage VCB (V)
4
−10
1
−1
− 0.4
− 0.6
− 0.8
−1.0
−1.2
Input voltage VIN (V)
SJH00018DED
−1.4
− 0.01
− 0.1
−1
−10
Output current IO (mA)
−100
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR411x Series
Characteristics charts of UNR4112
IC VCE
VCE(sat) IC
−100
− 0.5mA
IC / IB = 10
−10
−1
VCE = −10 V
300
Ta = 75°C
M
Di ain
sc te
on na
tin nc
ue e/
d
−80
hFE IC
400
Forward current transfer ratio hFE
Ta = 25°C
IB = −1.0 mA
− 0.9mA
− 0.8mA
− 0.7mA
− 0.6mA
−120
Collector current IC (mA)
Collector-emitter saturation voltage VCE(sat) (V)
−160
− 0.3mA
− 0.2mA
− 0.1mA
−2
0
−4
−6
−8
−10
− 0.01
− 0.1
−12
Output current IO (µA)
4
3
2
−1
−10
−100
Collector-base voltage VCB (V)
Characteristics charts of UNR4113
Ma
int
IB = −1.0 mA
Collector current IC (mA)
−120
Ta = 25°C
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
−40
− 0.1 mA
0
0
−2
−4
−6
−8
− 0.8
−1.0
−10
−12
Collector-emitter voltage VCE (V)
−1.2
−1.4
− 0.1
− 0.01
− 0.1
Ta = 75°C
− 0.1
−25°C
Collector current IC (mA)
SJH00018DED
−10
−100
hFE IC
−1
−10
−1
400
IC / IB = 10
−1
VO = − 0.2 V
Ta = 25°C
Output current IO (mA)
−10
− 0.01
− 0.1
VIN IO
−1
VCE(sat) IC
25°C
−1 000
−10
Input voltage VIN (V)
−100
− 0.9 mA
− 0.8 mA
− 0.7 mA
−80
− 0.6
−100
−100
VO = −5 V
Ta = 25°C
−10
−1
− 0.4
−10
Collector current IC (mA)
−102
Collector-emitter saturation voltage VCE(sat) (V)
en
an
IC VCE
−160
0
−1
−100
−103
ue
1
0
− 0.1
−10
IO VIN
f = 1 MHz
IE = 0
Ta = 25°C
5
−1
−104
ce
/D
isc
on
tin
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
25°C
−25°C
100
Collector current IC (mA)
Collector-emitter voltage VCE (V)
6
−25°C
Input voltage VIN (V)
0
− 0.1
VCE = −10 V
Forward current transfer ratio hFE
−40
Ta = 75°C
25°C
200
di
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− 0.4mA
−100
Ta = 75°C
300
25°C
200
−25°C
100
0
−1
−10
−100
−1 000
Collector current IC (mA)
5
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR411x Series
IO VIN
Output current IO (µA)
4
3
−100
VO = −5 V
Ta = 25°C
−103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN IO
−104
−102
VO = − 0.2 V
Ta = 25°C
−10
−1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
2
−10
−1
− 0.4
−100
IC VCE
−1.0
−1.2
− 0.4 mA
− 0.3 mA
− 0.2 mA
−40
− 0.1 mA
−4
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
an
Cob VCB
int
en
6
4
−1
Ta = 75°C
3
2
25°C
−100
hFE IC
VCE = −10 V
300
Ta = 75°C
200
25°C
−25°C
100
−25°C
− 0.01
− 0.1
−1
−10
0
−1
−100
−10
−100
−1 000
Collector current IC (mA)
Collector current IC (mA)
IO VIN
−104
Output current IO (µA)
Ma
5
f = 1 MHz
IE = 0
Ta = 25°C
−10
400
IC / IB = 10
− 0.1
−1
Output current IO (mA)
−10
ce
/D
isc
on
tin
−2
0
− 0.01
− 0.1
VO = −5 V
Ta = 25°C
−103
VIN IO
−1 000
VO = − 0.2 V
Ta = 25°C
−100
Input voltage VIN (V)
− 0.5 mA
−80
Collector-emitter saturation voltage VCE(sat) (V)
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
−120
ue
IB = −1.0 mA
−1.4
VCE(sat) IC
−100
Ta = 25°C
Collector current IC (mA)
− 0.8
Input voltage VIN (V)
−160
0
− 0.6
Forward current transfer ratio hFE
−1
Characteristics charts of UNR4114
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
− 0.1
di
p
Pl
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0
− 0.1
Collector-base voltage VCB (V)
−102
−10
−10
−1
1
0
− 0.1
−1
−10
−100
Collector-base voltage VCB (V)
6
−10
1
−1
− 0.4
− 0.6
− 0.8
−1.0
Input voltage VIN
SJH00018DED
−1.2
(V)
−1.4
− 0.1
− 0.1
−1
−10
Output current IO (mA)
−100
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR411x Series
Characteristics charts of UNR4115
IC VCE
VCE(sat) IC
−100
− 0.9 mA
− 0.8 mA
− 0.7 mA
−120
− 0.6 mA
− 0.5 mA
− 0.4 mA
IC / IB = 10
VCE = −10 V
−10
−1
300
Ta = 75°C
M
Di ain
sc te
on na
tin nc
ue e/
d
−80
hFE IC
400
Forward current transfer ratio hFE
Ta = 25°C
IB = −1.0 mA
Collector current IC (mA)
Collector-emitter saturation voltage VCE(sat) (V)
−160
− 0.2 mA
−40
− 0.1 mA
−4
−6
−8
−10
Output current IO (µA)
4
3
2
−1
−10
−100
Collector-base voltage VCB (V)
Characteristics charts of UNR4116
int
Ma
IB = −1.0 mA
Collector current IC (mA)
−120
Ta = 25°C
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
−80
− 0.4 mA
− 0.3 mA
− 0.2 mA
−40
− 0.1 mA
0
0
−2
−4
−6
−8
− 0.6
− 0.8
−1.0
−10
−12
Collector-emitter voltage VCE (V)
−1.2
−1.4
VIN IO
VO = − 0.2 V
Ta = 25°C
−1
− 0.1
− 0.01
− 0.1
−1
−10
−100
Output current IO (mA)
VCE(sat) IC
hFE IC
400
IC / IB = 10
−10
−1
Ta = 75°C
− 0.01
− 0.1
−1 000
−10
Input voltage VIN (V)
25°C
− 0.1
−100
−100
−10
−100
Collector-emitter saturation voltage VCE(sat) (V)
en
an
IC VCE
−160
VO = −5 V
Ta = 25˚C
−102
−1
− 0.4
−10
Collector current IC (mA)
−103
ue
1
0
− 0.1
0
−1
−100
IO VIN
f = 1 MHz
IE = 0
Ta = 25°C
5
−10
−104
ce
/D
isc
on
tin
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
−1
Collector current IC (mA)
Collector-emitter voltage VCE (V)
−25°C
−25°C
− 0.01
−0.1
−12
25°C
100
Input voltage VIN (V)
−2
0
− 0.1
VCE = −10 V
Forward current transfer ratio hFE
0
Ta = 75°C
25°C
200
di
p
Pl
lan nclu
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pla m d m des
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− 0.3 mA
300
Ta = 75°C
200
25°C
−25°C
100
−25°C
−1
−10
Collector current IC (mA)
SJH00018DED
−100
0
−1
−10
−100
−1 000
Collector current IC (mA)
7
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR411x Series
IO VIN
4
3
VO = −5 V
Ta = 25°C
−103
−100
Input voltage VIN (V)
Output current IO (µA)
5
VIN IO
−104
f = 1 MHz
IE = 0
Ta = 25°C
−102
VO = − 0.2 V
Ta = 25°C
−10
−1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
2
−10
−1
− 0.4
−100
− 0.2 mA
−20
− 0.1 mA
−4
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
en
an
Cob VCB
Ma
int
6
f = 1 MHz
IE = 0
Ta = 25°C
4
3
2
Ta = 75°C
25°C
− 0.1
−25°C
− 0.01
− 0.1
−1
−10
−10
−100
hFE IC
VCE = −10 V
300
Ta = 75°C
200
25°C
100
0
−1
−100
Collector current IC (mA)
−25°C
−10
−100
−1 000
Collector current IC (mA)
IO VIN
−104
−1
400
IC / IB = 10
−1
Output current IO (µA)
5
− 0.01
− 0.1
Output current IO (mA)
−10
ce
/D
isc
on
tin
−2
−1.4
Forward current transfer ratio hFE
Collector current IC (mA)
− 0.3 mA
−40
0
−1.2
VIN IO
VO = −5 V
Ta = 25°C
−103
−100
Input voltage VIN (V)
IB = −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
−60
0
−1.0
VCE(sat) IC
Ta = 25°C
−80
− 0.8
−100
ue
IC VCE
−120
−100
− 0.6
Input voltage VIN (V)
Characteristics charts of UNR4117
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
− 0.1
di
p
Pl
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cy
on es
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−1
Collector-emitter saturation voltage VCE(sat) (V)
0
− 0.1
Collector-base voltage VCB (V)
−102
−10
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
1
0
−0.1
−1
−10
−100
Collector-base voltage VCB (V)
8
−10
1
−1
− 0.4
− 0.6
− 0.8
−1.0
−1.2
Input voltage VIN (V)
SJH00018DED
−1.4
− 0.01
− 0.1
−1
−10
Output current IO (mA)
−100
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR411x Series
Characteristics charts of UNR4118
IC VCE
VCE(sat) IC
−100
Ta = 25°C
Collector current IC (mA)
−200
IB = − 1.0 mA
− 0.9 mA
−160
− 0.8 mA
− 0.7 mA
IC / IB = 10
−10
−1
VCE = −10 V
120
M
Di ain
sc te
on na
tin nc
ue e/
d
−120
hFE IC
160
Forward current transfer ratio hFE
Collector-emitter saturation voltage VCE(sat) (V)
−240
−80
−40
− 0.2 mA
− 0.1 mA
−4
−6
−8
−10
− 0.01
− 0.1
−12
Output current IO (µA)
4
3
2
−10
−100
Collector-base voltage VCB (V)
Characteristics charts of UNR4119
−10
Ta = 25°C
Ma
int
Collector current IC (mA)
−200
IB = −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
−160
−120
−80
− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
− 0.2 mA
− 0.1 mA
−40
0
0
−2
−4
−6
−8
−10
− 0.6
− 0.8
−1.0
−12
Collector-emitter voltage VCE (V)
−1.2
−1.4
VIN IO
VO = − 0.2 V
Ta = 25°C
−1
− 0.1
− 0.01
− 0.1
−1
−10
−100
Output current IO (mA)
hFE IC
160
IC / IB = 10
−10
Ta = 75°C
25°C
− 0.1
− 0.01
− 0.1
−1 000
−10
VCE(sat) IC
−1
−100
−100
Input voltage VIN (V)
−100
Collector-emitter saturation voltage VCE(sat) (V)
en
an
IC VCE
−240
VO = −5 V
Ta = 25°C
−102
−1
− 0.4
−10
Collector current IC (mA)
−103
ue
1
−1
0
−1
−100
IO VIN
f = 1 MHz
IE = 0
Ta = 25°C
0
− 0.1
−10
−104
ce
/D
isc
on
tin
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
5
40
Collector current IC (mA)
Collector-emitter voltage VCE (V)
6
−1
Input voltage VIN (V)
−2
0
25°C
−25°C
−25°C
VCE = −10 V
Forward current transfer ratio hFE
0
25°C
− 0.1
Ta = 75°C
80
di
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Pl
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− 0.6 mA
− 0.5 mA
− 0.4 mA
− 0.3 mA
Ta = 75°C
120
Ta = 75°C
80
25°C
−25°C
40
−25°C
−1
−10
Collector current IC (mA)
SJH00018DED
−100
0
−1
−10
−100
−1 000
Collector current IC (mA)
9
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR411x Series
IO VIN
f = 1 MHz
IE = 0
Ta = 25°C
3
−100
Input voltage VIN (V)
4
VO = −5 V
Ta = 25°C
−103
Output current IO (µA)
5
VIN IO
−104
−102
VO = −0.2 V
Ta = 25°C
−10
−1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
2
−10
−1
− 0.4
−100
− 0.3 mA
− 0.2 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
−20
− 0.1 mA
−10
−2
0
−4
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
Cob VCB
int
en
an
6
f = 1 MHz
IE = 0
Ta = 25°C
4
− 0.01
− 0.1
−1
Ta = 75°C
3
2
25°C
− 0.1
−1
−10
−100
Output current IO (mA)
hFE IC
160
IC / IB = 10
VCE = −10 V
Ta = 75°C
120
25°C
−25°C
80
40
−25°C
− 0.01
− 0.1
−1
−10
0
−1
−100
−10
−100
−1 000
Collector current IC (mA)
Collector current IC (mA)
IO VIN
−104
Output current IO (µA)
Ma
5
−1.4
−10
ce
/D
isc
on
tin
0
−1.2
VO = −5 V
Ta = 25°C
−103
−102
−10
VIN IO
−100
Input voltage VIN (V)
Ta = 25˚C
ue
Collector current IC (mA)
−100
−40
−30
−1.0
VCE(sat) IC
IB = − 1.0 mA
− 0.9 mA
− 0.8 mA
−50
− 0.8
Forward current transfer ratio hFE
IC VCE
−60
− 0.6
Input voltage VIN (V)
Characteristics charts of UNR411D
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
− 0.1
di
p
Pl
lan nclu
ea
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se
pla m d m des
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d te t o
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co L a d t ty
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n.p bo yp pe
ct
life
an ut e
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cy
on es
cle
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sta
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.jp rm
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−1
Collector-emitter saturation voltage VCE(sat) (V)
0
− 0.1
Collector-base voltage VCB (V)
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
1
0
− 0.1
−1
−10
−100
Collector-base voltage VCB (V)
10
−10
1
−1
−1.5
−2.0
−2.5
−3.0
−3.5
Input voltage VIN (V)
SJH00018DED
−4.0
− 0.01
− 0.1
−1
−10
Output current IO (mA)
−100
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR411x Series
Characteristics charts of UNR411E
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
IB = −1.0 mA
Ta = 25°C
− 0.9 mA
− 0.8 mA − 0.7 mA
−50
−40
− 0.3 mA
−30
− 0.2 mA
hFE IC
400
IC / IB = 10
−10
−1
VCE = −10 V
300
200
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector current IC (mA)
VCE(sat) IC
−100
Forward current transfer ratio hFE
−60
− 0.1 mA
−10
−2
0
−4
−6
−8
−10
Output current IO (µA)
2
−10
−100
Characteristics charts of UNR411F
en
an
IC VCE
int
Ma
IB = −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
−200
Collector current IC (mA)
Ta = 25°C
−160
−120
− 0.5 mA
−80
− 0.4 mA
− 0.3 mA
−40
0
− 0.2 mA
0
−2
−4
−6
−8
− 0.1 mA
−10 −12
Collector-emitter voltage VCE (V)
VO = −5 V
Ta = 25°C
−10
−1
−1.5
−2.0
−2.5
−3.0
−3.5
−100
−1 000
−4.0
VIN IO
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
− 0.01
− 0.1
−1
−10
−100
Output current IO (mA)
VCE(sat) IC
hFE IC
160
IC / IB = 10
−10
−1
Ta = 75°C
25°C
− 0.1
− 0.01
− 0.1
−10
−100
Input voltage VIN (V)
−100
Collector-emitter saturation voltage VCE(sat) (V)
Collector-base voltage VCB (V)
25°C
−25°C
Collector current IC (mA)
−102
ue
1
−240
0
−1
−100
−103
ce
/D
isc
on
tin
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
3
−1
−10
IO VIN
4
0
− 0.1
−1
−104
f = 1 MHz
IE = 0
Ta = 25°C
Ta = 75°C
100
Collector current IC (mA)
Cob VCB
5
−25°C
− 0.01
− 0.1
−12
Collector-emitter voltage VCE (V)
6
− 0.1
Input voltage VIN (V)
0
25°C
VCE = −10 V
Forward current transfer ratio hFE
−20
Ta = 75°C
di
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Pl
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life
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− 0.6 mA
− 0.5 mA
− 0.4 mA
120
Ta = 75°C
25°C
80
−25°C
40
−25°C
−1
−10
Collector current IC (mA)
SJH00018DED
−100
0
−1
−10
−100
−1 000
Collector current IC (mA)
11
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR411x Series
IO VIN
Output current IO (µA)
4
3
−100
VO = −5 V
Ta = 25°C
−103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN IO
−104
−102
VO = − 0.2 V
Ta = 25°C
−10
−1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
2
−10
−1
− 0.4
−100
IC VCE
− 0.4 mA
−60
− 0.3 mA
−40
− 0.2 mA
−20
− 0.1 mA
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
Cob VCB
en
int
25°C
−0.1
−25°C
3
2
−10
−100
−1 000
VIN IO
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
1
0
−1
−10
−100
Collector-base voltage VCB (V)
− 0.01
− 0.1
−1
−10
Output current IO (mA)
SJH00018DED
−10
−100
hFE IC
VCE = −10 V
200
160
Ta = 75°C
120
25°C
80
−25°C
40
0
−0.1
−1
−10
Collector current IC (mA)
Collector current IC (mA)
−100
−1
240
IC / IB = 10
Ta = 75°C
−0.01
−1
Input voltage VIN (V)
4
f = 1 MHz
IE = 0
Ta = 25°C
Ma
5
an
6
− 0.01
− 0.1
Output current IO (mA)
−1
ce
/D
isc
on
tin
−4
−1.4
Forward current transfer ratio hFE
Collector current IC (mA)
IB = − 0.5 mA
−2
−1.2
−10
ue
Ta = 25°C
0
−1.0
−100
−100
0
− 0.8
VCE(sat) IC
−120
−80
− 0.6
Input voltage VIN (V)
Characteristics charts of UNR411H
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
− 0.1
di
p
Pl
lan nclu
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n.p bo yp pe
ct
life
an ut e
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cy
on es
cle
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−1
Collector-emitter saturation voltage VCE(sat) (V)
0
− 0.1
Collector-base voltage VCB (V)
12
−10
1
−100
−100
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR411x Series
Characteristics charts of UNR411L
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
−100
Ta = 25°C
Collector current IC (mA)
−200
−160
IB = −1.0 mA
IC / IB = 10
−10
−1
VCE = −10 V
200
160
120
M
Di ain
sc te
on na
tin nc
ue e/
d
−120
hFE IC
240
Forward current transfer ratio hFE
IC VCE
−240
− 0.6 mA
−80
− 0.4 mA
−40
− 0.2 mA
0
0
–2
–4
–6
–8
–10
Ta = 75°C
25°C
−25°C
40
−100
0
−1
−1 000
−10
−100
−1 000
Collector current IC (mA)
VIN IO
f = 1 MHz
IE = 0
Ta = 25°C
Input voltage VIN (V)
4
3
2
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
−10
−100
− 0.01
− 0.1
Characteristics charts of UNR411M
− 0.5 mA
− 0.4 mA
−60
− 0.3 mA
−40
− 0.2 mA
−20
− 0.1 mA
0
0
−2
−4
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
Collector-emitter saturation voltage VCE(sat) (V)
Ta = 25°C
− 0.6 mA
−80
−10
−100
VCE(sat) IC
−100
Ma
int
IB = −1.0 mA
− 0.9 mA
−120
− 0.8 mA
− 0.7 mA
−100
en
an
IC VCE
−140
−1
Output current IO (mA)
hFE IC
200
IC / IB = 33.3
Ta = 75°C
Forward current transfer ratio hFE
0
−1
ue
1
Collector-base voltage VCB (V)
Collector current IC (mA)
−10
−100
ce
/D
isc
on
tin
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
5
80
Collector current IC (mA)
Collector-emitter voltage VCE (V)
6
−25°C
− 0.1
− 0.01
−1
–12
Ta = 75°C
25°C
di
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− 0.8 mA
−10
Ta = 75°C
−1
25°C
−25°C
− 0.1
− 0.01
−1
−10
−100
Collector current IC (mA)
SJH00018DED
−1 000
VCE = −10 V
25°C
160
−25°C
120
80
40
0
−1
−10
−100
−1 000
Collector current IC (mA)
13
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR411x Series
IO VIN
VIN IO
−1 000
f = 1 MHz
Ta = 25°C
VO = −5 V
Ta = 25°C
Input voltage VIN (V)
Output current IO (mA)
−100
−100
−10
VO = − 0.2 V
Ta = 25°C
−10
−1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
10
−20
−30
− 0.1
−40
Collector-base voltage VCB (V)
− 0.5 mA
−80
− 0.4 mA
− 0.3 mA
−60
−40
− 0.2 mA
−20
− 0.1 mA
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
an
int
en
f = 1 MHz
Ta = 25°C
1
0
−10
−20
−40
25°C
−25°C
IC / IB = 10
− 0.01
− 0.1
−1
−10
−100
hFE IC
100
50
−1.5
−2.0
Input voltage VIN (V)
SJH00018DED
−10
−100
−1 000
Collector current IC (mA)
VO = −5 V
Ta = 25°C
−1.0
−25°C
150
IO VIN
− 0.5
25°C
200
Collector current IC (mA)
0
VCE = −10 V
Ta = 75°C
250
0
−1
−100
−10
−1
−10
Output current IO (mA)
Ta = 75°C
− 0.1
Output current IO (mA)
−30
Collector-base voltage VCB (V)
14
− 0.01
−1
300
−100
Ma
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
10
−2.5
−2.5
VIN IO
−100
Input voltage VIN (V)
−4
−2.0
−1
ce
/D
isc
on
tin
Collector current IC (mA)
−100
−2
−1.5
Forward current transfer ratio hFE
IB = −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
0
−1.0
VCE(sat) IC
−120
0
− 0.5
ue
IC VCE
Ta = 25°C
0
Input voltage VIN (V)
Characteristics charts of UNR411N
−140
− 0.1
di
p
Pl
lan nclu
ea
e
se
pla m d m des
ne ain ain foll
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d te t o
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.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
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Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
