UNR521NG0L

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR521xG Series Silicon NPN epitaxial planar type For digital circuits ■ Package • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing • Code SMini3-F2 • Pin Name 1: Base 2: Emitter 3: Collector ■ Resistance by Part Number di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. M Di ain sc te on na tin nc ue e/ d ■ Features Marking symbol (R1) 8L 47 kΩ 8A 10 kΩ 8B 22 kΩ 8C 47 kΩ 8D 10 kΩ 8E 10 kΩ 8F 4.7 kΩ 8H 22 kΩ 8I 0.51 kΩ 8K 1 kΩ 8M 47 kΩ 8N 47 kΩ 8O 4.7 kΩ 8P 10 kΩ 8Q 4.7 kΩ EL 2.2 kΩ EX 4.7 kΩ EZ 22 kΩ FD 2.2 kΩ FF 4.7 kΩ (R2)  10 kΩ 22 kΩ 47 kΩ 47 kΩ    5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 4.7 kΩ 4.7 kΩ 47 kΩ 47 kΩ 47 kΩ 2.2 kΩ 22 kΩ an ce /D isc on tin ue • UNR5210G • UNR5211G • UNR5212G • UNR5213G • UNR5214G • UNR5215G • UNR5216G • UNR5217G • UNR5218G • UNR5219G • UNR521DG • UNR521EG • UNR521FG • UNR521KG • UNR521LG • UNR521MG • UNR521NG • UNR521TG • UNR521VG • UNR521ZG ■ Internal Connection R1 B C R2 E int en ■ Absolute Maximum Ratings Ta = 25°C Parameter Rating Unit VCBO 50 V Collector-emitter voltage (Base open) VCEO Ma Symbol Collector-base voltage (Emitter open) 50 V 100 mA PT 150 mW Tj 150 °C Tstg −55 to +150 °C Collector current IC Total power dissipation Junction temperature Storage temperature Publication date: June 2007 SJH00218AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). UNR521xG Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 Min 50 Typ Max Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 Emitter-base UNR5210G/5215G/5216G/5217G IEBO VEB = 6 V, IC = 0 0.01 V 0.1 cutoff current UNR5213G 0.1 (Collector UNR5212G/5214G/521DG/ 0.2 open) 521EG/521MG/521NG/521TG UNR521FG/521KG UNR5219G UNR5218G/521LG/521VG Forward UNR521VG current UNR5218G/521KG/521LG hFE transfer UNR5219G/521DG/521FG ratio UNR5211G 1.5 2.0 6 20  60 Collector-emitter saturation voltage 200 80 80 UNR5210G*/5215G*/5216G*/5217G* 400 160 460 IC = 10 mA, IB = 0.3 mA VCE(sat) 0.25 V IC = 10 mA, IB = 1.5 mA UNR521VG VOH ce /D isc on tin ue Output voltage high-level VOL UNR5213G/521KG an en UNR5218G int Input 1.0 60 UNR521NG/521TG Transition frequency VCE = 10 V, IC = 5 mA 0.5 35 UNR5213G/5214G/521MG UNR521EG 0.4 30 UNR521ZG UNR521DG mA 20 UNR5212G/521EG Output voltage low-level µA di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. UNR521ZG UNR5211G Unit V M Di ain sc te on na tin nc ue e/ d Conditions fT R1 4.9 V VCC = 5 V, VB = 2.5 V, RL = 1 kΩ 0.2 V VCC = 5 V, VB = 3.5 V, RL = 1 kΩ VCC = 5 V, VB = 10 V, RL = 1 kΩ VCC = 5 V, VB = 6.0 V, RL = 1 kΩ VCB = 10 V, IE = −2 mA, f = 200 MHz 150 −30% 0.51 MHz +30% kΩ 1.0 Ma resistance UNR5219G VCC = 5 V, VB = 0.5 V, RL = 1 kΩ UNR521MG/521VG 2.2 UNR5216G/521FG/521LG/ 521NG/521ZG 4.7 UNR5211G/5214G/5215G/521KG 10 UNR5212G/5217G/521TG 22 UNR5210G/5213G/521DG/521EG 47 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification 2 Rank Q R S No-rank hFE 160 to 260 210 to 340 290 to 460 160 to 460 SJH00218AED This product complies with the RoHS Directive (EU 2002/95/EC). UNR521xG Series ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C Parameter Symbol Resistance UNR521MG ratio Conditions Min Typ R1/R2 Max Unit  0.047 UNR521NG 0.1 UNR5218G/5219G 0.08 0.10 UNR521ZG 0.12 0.21 UNR5214G 0.17 0.21 M Di ain sc te on na tin nc ue e/ d UNR521TG UNR521FG 0.25 0.47 0.37 0.47 UNR5211G/5212G/5213G/521LG 0.8 1.0 1.2 UNR521KG 1.70 2.13 2.60 1.70 2.14 2.60 3.7 4.7 5.7 UNR521EG UNR521DG 1.0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. UNR521VG 0.57 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT  Ta 200 160 120 80 40 0 40 80 120 160 Ambient temperature Ta (°C) en an IC  VCE 60 IB = 1.0 mA 0.9 mA 0.8 mA Ma int Ta = 25°C Collector current IC (mA) 50 40 30 0.3 mA 0.4 mA 0.5 mA 0.6 mA 0.7 mA 0.1 mA 20 10 0 0 2 4 6 8 10 Collector-emitter voltage VCE 12 (V) Collector-emitter saturation voltage VCE(sat) (V) Characteristics charts of UNR5210G VCE(sat)  IC 102 hFE  IC 400 IC / IB = 10 VCE = 10 V Forward current transfer ratio hFE 0 ce /D isc on tin ue Total power dissipation PT (mW) 240 10 1 Ta = 75°C 25°C 10−1 300 Ta = 75°C 25°C 200 −25°C 100 −25°C 10−2 10−1 1 10 Collector current IC (mA) SJH00218AED 102 0 1 10 102 103 Collector current IC (mA) 3 This product complies with the RoHS Directive (EU 2002/95/EC). UNR521xG Series Cob  VCB IO  VIN 104 f = 1 MHz IE = 0 Ta = 25°C 103 Output current IO (µA) 5 4 102 VO = 0.2 V Ta = 25°C 10 1 M Di ain sc te on na tin nc ue e/ d 3 VIN  IO 102 VO = 5 V Ta = 25°C Input voltage VIN (V) Collector output capacitance C (pF) (Common base, input open circuited) ob 6 2 1 0.4 102 10 0.3 mA 80 0.2 mA 40 8 10 12 Collector-emitter voltage VCE (V) Cob  VCB an int 4 Output current IO (µA) Ma 5 10 −2 10 −1 10 1 25°C 3 2 Ta = 75°C 10 −1 −25˚C 10 −2 10 −1 1 102 10 hFE  IC 400 VCE = 10 V 300 Ta = 75°C 200 25°C −25°C 100 0 102 10 1 Output current IO (mA) IC / IB = 10 1 10 102 103 Collector current IC (mA) Collector current IC (mA) IO  VIN 104 f = 1 MHz IE = 0 Ta = 25°C en 6 102 ce /D isc on tin 0.1 mA 6 1.4 Forward current transfer ratio hFE 0.4 mA Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 0.7 mA 0.6 mA 0.5 mA 4 1.2 ue Ta = 25°C 120 2 1.0 VCE(sat)  IC IB = 1.0 mA 0.9 mA 0.8 mA 0 0.8 Input voltage VIN (V) IC  VCE 160 0 0.6 103 102 10 VIN  IO 102 VO = 5 V Ta = 25°C Input voltage VIN (V) 1 Characteristics charts of UNR5211G Collector output capacitance C (pF) (Common base, input open circuited) ob 10 −1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 10 −1 Collector-base voltage VCB (V) VO = 0.2 V Ta = 25°C 10 1 10 −1 1 0 10 −1 10 Collector-base voltage VCB (V) 4 10 1 102 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00218AED 1.4 10 −2 10 −1 1 10 Output current IO (mA) 102 This product complies with the RoHS Directive (EU 2002/95/EC). UNR521xG Series Characteristics charts of UNR5212G VCE(sat)  IC 0.7 mA 0.6 mA 0.5 mA 0.4 mA hFE  IC 400 IC / IB = 10 VCE = 10 V 10 1 Forward current transfer ratio hFE IB = 1.0 mA 0.9 mA 0.8 mA 120 102 300 Ta = 75°C 200 M Di ain sc te on na tin nc ue e/ d Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC  VCE 160 0.3 mA 0.2 mA 0.1 mA 0 2 4 6 8 10 12 Output current IO (µA) 3 2 1 102 10 en an IC  VCE int Collector current IC (mA) Ma IB = 1.0 mA Ta = 25°C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 120 0.5 mA 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 Collector-emitter voltage VCE 12 (V) Collector-emitter saturation voltage VCE(sat) (V) Characteristics charts of UNR5213G 160 1 10 0.6 0.8 1.0 1.2 1 102 10 hFE  IC 1 Ta = 75°C 10 −1 −25°C 10 Collector current IC (mA) SJH00218AED VO = 0.2 V Ta = 25°C Output current IO (mA) 400 IC / IB = 10 1 VIN  IO 10 −1 10 −2 10 −1 1.4 10 10 −2 10 −1 103 1 VCE(sat)  IC 25°C 102 10 Input voltage VIN (V) 102 10 102 VO = 5 V Ta = 25°C 102 1 0.4 Collector-base voltage VCB (V) −25°C Collector current IC (mA) 103 ue 1 0 102 10 IO  VIN 4 0 10 −1 1 104 f = 1 MHz IE = 0 Ta = 25°C 5 10 −2 10 −1 ce /D isc on tin Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 25°C 100 Collector current IC (mA) Collector-emitter voltage VCE (V) 6 −25°C Input voltage VIN (V) 0 10 −1 102 VCE = 10 V Forward current transfer ratio hFE 40 Ta = 75°C 25°C di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 80 Ta = 75°C 300 25°C −25°C 200 100 0 1 10 102 103 Collector current IC (mA) 5 This product complies with the RoHS Directive (EU 2002/95/EC). UNR521xG Series IO  VIN Output current IO (µA) 4 3 102 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN  IO 104 102 VO = 0.2 V Ta = 25°C 10 1 M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 6 2 1 0.4 102 10 1.0 1.2 1.4 10 −2 10 −1 Ta = 25°C IB = 1.0 mA 120 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 40 0.2 mA IC / IB = 10 10 1 Ta = 75°C 25°C 10 −1 4 6 8 10 12 Collector-emitter voltage VCE (V) Cob  VCB an int 4 Output current IO (µA) Ma 5 3 2 Ta = 75°C 200 25°C −25°C 100 102 10 1 10 102 103 Collector current IC (mA) Collector current IC (mA) IO  VIN 104 f = 1 MHz IE = 0 Ta = 25°C en 6 VCE = 10 V 300 0 1 103 102 10 VIN  IO 102 VO = 5 V Ta = 25°C Input voltage VIN (V) 2 hFE  IC −25°C 10 −2 10 −1 ce /D isc on tin 0 102 10 400 ue 0.1 mA 102 1 Output current IO (mA) VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) IC  VCE Collector current IC (mA) 0.8 Input voltage VIN (V) 160 0 0.6 Forward current transfer ratio hFE 1 Characteristics charts of UNR5214G Collector output capacitance C (pF) (Common base, input open circuited) ob 10 −1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 10-1 Collector-base voltage VCB (V) VO = 0.2 V Ta = 25°C 10 1 10 −1 1 0 10 −1 1 10 Collector-base voltage VCB (V) 6 10 1 102 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00218AED 1.4 10 −2 10 −1 1 10 Output current IO (mA) 102 This product complies with the RoHS Directive (EU 2002/95/EC). UNR521xG Series Characteristics charts of UNR5215G VCE(sat)  IC 0.7 mA 0.6 mA 0.5 mA 0.4 mA hFE  IC 400 IC / IB = 10 VCE = 10 V 10 300 Ta = 75°C M Di ain sc te on na tin nc ue e/ d Collector current IC (mA) 120 102 Forward current transfer ratio hFE Ta = 25°C IB = 1.0 mA 0.9 mA 0.8 mA Collector-emitter saturation voltage VCE(sat) (V) IC  VCE 160 0.3 mA 0.2 mA 40 0.1 mA 2 4 6 8 10 10 −1 12 Output current IO (µA) 4 3 2 1 1 102 10 Characteristics charts of UNR5216G int Collector current IC (mA) Ma Ta = 25°C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 120 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) en an IC  VCE 160 1 10 0.6 0.8 1.0 1.2 103 VIN  IO 10 −1 10 −2 10 −1 1.4 VO = 0.2 V Ta = 25°C 1 1 102 10 Output current IO (mA) VCE(sat)  IC hFE  IC 400 IC / IB = 10 10 1 Ta = 75°C 25°C 10 −1 102 10 Input voltage VIN (V) 102 10 102 VO = 5 V Ta = 25°C 102 1 0.4 Collector-base voltage VCB (V) −25°C Collector current IC (mA) 103 ue 0 10 −1 0 102 10 IO  VIN f = 1 MHz IE = 0 Ta = 25°C 5 1 104 ce /D isc on tin Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 25°C 100 Collector current IC (mA) Collector-emitter voltage VCE (V) 6 200 −25°C 10 −2 Input voltage VIN (V) 0 Ta = 75°C 25°C 10 −1 VCE = 10 V Forward current transfer ratio hFE 0 1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 80 Ta = 75°C 300 25°C −25°C 200 100 −25°C 10 −2 10 −1 1 10 Collector current IC (mA) SJH00218AED 102 0 1 10 102 103 Collector current IC (mA) 7 This product complies with the RoHS Directive (EU 2002/95/EC). UNR521xG Series IO  VIN Output current IO (µA) 4 3 102 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN  IO 104 102 VO = 0.2 V Ta = 25°C 10 1 M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 6 2 1 0.4 102 10 0.4 mA 0.3 mA 0.2 mA 40 20 102 1 4 6 8 10 12 Collector-emitter voltage VCE (V) Cob  VCB 4 Output current IO (µA) Ma 5 f = 1 MHz IE = 0 Ta = 25°C 3 2 102 10 hFE  IC 400 Ta = 75°C 25°C 10 −1 VCE = 10 V 300 200 Ta = 75°C 25°C −25°C 100 −25°C 10 −2 10 −1 1 0 102 10 1 Collector current IC (mA) 10 102 103 Collector current IC (mA) IO  VIN 104 an int en 6 1 Output current IO (mA) 10 ce /D isc on tin 0 2 10 −2 10 −1 1.4 IC / IB = 10 ue 0.1 mA 0 1.2 103 102 10 VIN  IO 102 VO = 5 V Ta = 25°C Input voltage VIN (V) Collector current IC (mA) 80 Collector-emitter saturation voltage VCE(sat) (V) T = 25°C 60 1.0 VCE(sat)  IC a IB =1 .0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 100 0.8 Input voltage VIN (V) IC  VCE 120 0.6 Forward current transfer ratio hFE 1 Characteristics charts of UNR5217G Collector output capacitance C (pF) (Common base, input open circuited) ob 10 −1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 10 −1 Collector-base voltage VCB (V) VO = 0.2 V Ta = 25°C 10 1 10 −1 1 0 10 −1 1 10 Collector-base voltage VCB (V) 8 10 1 102 1 0.4 0.6 0.8 1.0 1.2 Input voltage VIN (V) SJH00218AED 1.4 10 −2 10 −1 1 10 Output current IO (mA) 102 This product complies with the RoHS Directive (EU 2002/95/EC). UNR521xG Series Characteristics charts of UNR5218G IC  VCE VCE(sat)  IC IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 160 IC / IB = 10 VCE = 10 V 10 120 Ta = 75°C M Di ain sc te on na tin nc ue e/ d Collector current IC (mA) 200 hFE  IC 160 Forward current transfer ratio hFE Ta = 25°C 102 Collector-emitter saturation voltage VCE(sat) (V) 240 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 40 0.2 mA 0.1 mA 2 4 6 8 10 Collector-emitter voltage VCE 10 −1 10 −2 10 −1 12 (V) Output current IO (µA) 2 1 102 10 en an IC  VCE Ma int Collector current IC (mA) Ta = 25°C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 160 120 0.5 mA 0.4 mA 0.3 mA 80 40 0.2 mA 0.1 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) Characteristics charts of UNR5219G 200 1 0.8 1.0 1.2 VO = 0.2 V Ta = 25°C 10−1 10−2 10−1 1.4 1 102 10 Output current IO (mA) hFE  IC 160 IC / IB = 10 10 1 10 −2 10 −1 VIN  IO 1 VCE(sat)  IC Ta = 75°C 25°C 10 −1 103 10 Input voltage VIN (V) 102 102 102 VO = 5 V Ta = 25°C 0.6 10 Collector current IC (mA) 10 1 0.4 Collector-base voltage VCB (V) 240 0 102 10 102 ue 1 1 103 ce /D isc on tin Collector output capacitance C (pF) (Common base, input open circuited) ob 3 0 10-1 40 IO  VIN 4 25°C −25°C −25°C 104 f = 1 MHz IE = 0 Ta = 25°C 5 80 Collector current IC (mA) Cob  VCB 6 25°C Input voltage VIN (V) 0 Ta = 75°C VCE = 10 V Forward current transfer ratio hFE 0 1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 120 120 Ta = 75°C 80 25°C −25°C 40 −25°C 0 1 10 Collector current IC (mA) SJH00218AED 102 1 10 102 103 Collector current IC (mA) 9 This product complies with the RoHS Directive (EU 2002/95/EC). UNR521xG Series IO  VIN 104 f = 1 MHz IE = 0 Ta = 25°C 4 3 Input voltage VIN (V) 103 Output current IO (µA) 5 VIN  IO 102 VO = 5 V Ta = 25°C 102 VO = 0.2 V Ta = 25°C 10 1 M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 6 2 1 0.4 102 10 1.0 1.2 10 −2 10 −1 1.4 Ta = 25°C 0.9 mA 0.8 mA 0.5 mA 0.7 mA 0.4 mA 25 0.6 mA 0.3 mA IB = 1.0 mA 20 15 0.2 mA 0.1 mA 10 IC / IB = 10 10 1 Ta = 75°C 25°C 10 −1 −25°C 4 6 8 10 12 Collector-emitter voltage VCE (V) Cob  VCB int en f = 1 MHz IE = 0 Ta = 25°C 4 Output current IO (µA) Ma 5 3 2 25°C −25°C 80 40 102 10 Ta = 75°C 120 0 1 1 10 102 103 Collector current IC (mA) Collector current IC (mA) IO  VIN 104 an 6 10 −2 10 −1 hFE  IC VCE = 10 V 103 102 10 VIN  IO 102 VO = 5 V Ta = 25°C Input voltage VIN (V) 2 ce /D isc on tin 0 102 10 160 ue 5 102 1 Output current IO (mA) VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) IC  VCE 30 Collector current IC (mA) 0.8 Input voltage VIN (V) Characteristics charts of UNR521DG 0 0.6 Forward current transfer ratio hFE 1 Collector-base voltage VCB (V) Collector output capacitance C (pF) (Common base, input open circuited) ob 10 −1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 10 −1 VO = 0.2 V Ta = 25°C 10 1 10 −1 1 0 10 −1 1 10 Collector-base voltage VCB (V) 10 10 1 102 1 1.5 2.0 2.5 3.0 3.5 Input voltage VIN (V) SJH00218AED 4.0 10 −2 10 −1 1 10 Output current IO (mA) 102 This product complies with the RoHS Directive (EU 2002/95/EC). UNR521xG Series Characteristics charts of UNR521EG VCE(sat)  IC 40 0.3 mA 0.2 mA 0.4 mA 0.5 mA 0.1 mA hFE  IC 160 IC / IB = 10 VCE = 10 V 10 1 Ta = 75°C 120 25°C −25°C M Di ain sc te on na tin nc ue e/ d Collector current IC (mA) 50 102 Forward current transfer ratio hFE IB = 1.0 mA 0.7 mA Ta = 25°C 0.9 mA 0.6 mA 0.8 mA Collector-emitter saturation voltage VCE(sat) (V) IC  VCE 60 20 10 2 4 6 8 10 12 Output current IO (µA) 4 3 2 1 102 10 10 Collector-base voltage VCB (V) Characteristics charts of UNR521FG int Ma 200 Collector current IC (mA) Ta = 25°C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 160 120 IB = 1.0 mA 0.5 mA 80 0.4 mA 0.3 mA 40 0.2 mA 0.1 mA 0 0 2 4 6 8 10 Collector-emitter voltage VCE 12 (V) Collector-emitter saturation voltage VCE(sat) (V) en an IC  VCE 240 2.0 2.5 3.0 VIN  IO 3.5 10 −1 10 −2 10 −1 4.0 VO = 0.2 V Ta = 25°C 1 1 10 102 Output current IO (mA) VCE(sat)  IC hFE  IC 160 IC / IB = 10 10 Ta = 75°C 1 103 10 Input voltage VIN (V) 102 102 102 VO = 5 V Ta = 25°C 102 1 1.5 10 Collector current IC (mA) 103 ue 1 1 IO  VIN f = 1MHz IE = 0 Ta = 25°C 0 10 −1 0 102 10 104 ce /D isc on tin Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 5 1 Collector current IC (mA) Collector-emitter voltage VCE (V) 6 40 −25°C 10 −2 10 −1 Input voltage VIN (V) 0 25°C 10 −1 VCE = 10 V Forward current transfer ratio hFE 0 Ta = 75°C 80 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 30 25°C 10 −1 120 Ta = 75°C 80 25°C −25°C 40 −25°C 10 −2 10 −1 1 10 Collector current IC (mA) SJH00218AED 102 0 1 10 102 103 Collector current IC (mA) 11 This product complies with the RoHS Directive (EU 2002/95/EC). UNR521xG Series IO  VIN f = 1 MHz IE = 0 Ta = 25°C 3 Input voltage VIN (V) 4 102 VO = 5 V Ta = 25°C 103 Output current IO (µA) 5 VIN  IO 104 102 VO = 0.2 V Ta = 25°C 10 1 M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 6 2 1 0.4 102 10 IB = 1.2 mA 120 1.0 mA 0.8 mA 80 0.6 mA 0.4 mA 40 6 8 10 Collector-emitter voltage VCE 12 (V) an Cob  VCB f = 1 MHz IE = 0 Ta = 25°C int 4 Input voltage VIN (V) Ma 5 3 2 10 1 25°C Ta = 75°C 10 −1 −25°C 10 −2 1 10 1 10 Collector-base voltage VCB (V) 102 102 103 Collector current IC (mA) VO = 0.2 V Ta = 25°C 10 1 10 −1 1 10 Output current IO (mA) SJH00218AED 102 10 hFE  IC 240 VCE = 10 V 200 160 Ta = 75°C 120 25°C 80 −25°C 40 0 1 10 102 Collector current IC (mA) VIN  IO 10 −2 10 −1 1 Output current IO (mA) 1 0 10 −2 10 −1 1.4 IC / IB = 10 102 en 6 102 ce /D isc on tin 0.2 mA Collector-emitter saturation voltage VCE(sat) (V) 160 4 1.2 ue Collector current IC (mA) 200 2 1.0 VCE(sat)  IC Ta = 25°C 0 0.8 Input voltage VIN (V) IC  VCE 240 0 0.6 Forward current transfer ratio hFE 1 Characteristics charts of UNR521KG Collector output capacitance C (pF) (Common base, input open circuited) ob 10 −1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 10 −1 Collector-base voltage VCB (V) 12 10 1 102 103 This product complies with the RoHS Directive (EU 2002/95/EC). UNR521xG Series Characteristics charts of UNR521LG VCE(sat)  IC 160 IB = 1.0 mA 0.8 mA 120 hFE  IC 240 IC / IB = 10 10 VCE = 10 V 200 Ta = 75°C 160 120 M Di ain sc te on na tin nc ue e/ d Collector current IC (mA) 200 102 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC  VCE 240 0.4 mA 40 0.2 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) 10 −2 1 Input voltage VIN (V) 2 1 Characteristics charts of UNR521MG int Ma IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA Collector current IC (mA) 0.5 mA 0.4 mA 0.3 mA 120 80 0.2 mA 40 0 Ta = 25°C 0.1 mA 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) en an IC  VCE 160 102 0 103 1 10 102 103 Collector current IC (mA) 1 10 −1 10 −2 10 −1 Collector-base voltage VCB (V) 200 10 10 ue 102 10 240 40 VO = 0.2 V Ta = 25°C ce /D isc on tin Collector output capacitance C (pF) (Common base, input open circuited) ob 3 1 −25°C VIN  IO 4 0 −25°C 102 f = 1 MHz IE = 0 Ta = 25°C 5 25°C 10 −1 25°C 80 Collector current IC (mA) Cob  VCB 6 Ta = 75°C 1 102 10 Output current IO (mA) VCE(sat)  IC 10 hFE  IC IC / IB = 10 1 Ta = 75°C 25°C 10 −1 −25˚C 10 −2 10 −3 500 Forward current transfer ratio hFE 80 1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0.6 mA 1 10 102 Collector current IC (mA) SJH00218AED 103 VCE = 10 V 400 300 Ta = 75°C 25°C 200 −25°C 100 0 1 10 102 103 Collector current IC (mA) 13 This product complies with the RoHS Directive (EU 2002/95/EC). UNR521xG Series IO  VIN 104 f = 1 MHz IE = 0 Ta = 25°C VIN  IO 102 VO = 5 V Ta = 25°C VO = 0.2 V Ta = 25°C 4 3 Input voltage VIN (V) Output current IO (µA) 103 102 10 1 M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 5 2 0.4 0.8 1.0 1.2 1.4 Ta = 25°C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 120 80 0.3 mA 0.2 mA 40 IC / IB = 10 1 Ta = 75°C 10 −1 25°C 4 6 8 10 12 Collector-emitter voltage VCE (V) an Cob  VCB f = 1 MHz IE = 0 Ta = 25°C int 4 Output current IO (µA) Ma 5 1 102 10 3 2 VCE = 10 V 400 Ta = 75°C 320 25°C 240 −25°C 160 80 0 103 1 Collector current IC (mA) 10 102 103 Collector current IC (mA) IO  VIN 104 en 6 10 −2 103 102 10 VIN  IO 102 VO = 5 V Ta = 25°C Input voltage VIN (V) 2 hFE  IC −25°C ce /D isc on tin 0 102 10 480 ue 0.1 mA 10 1 Output current IO (mA) VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) IC  VCE Collector current IC (mA) 0.6 Input voltage VIN (V) 160 0 10 −2 10 −1 1 102 10 Forward current transfer ratio hFE 1 Characteristics charts of UNR521NG Collector output capacitance C (pF) (Common base, input open circuited) ob 10 −1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 10 −1 Collector-base voltage VCB (V) VO = 0.2 V Ta = 25°C 10 1 10 −1 1 0 1 10 Collector-base voltage VCB (V) 14 10 1 102 1 0.4 0.6 0.8 1 1.2 Input voltage VIN (V) SJH00218AED 1.4 10 −2 10 −1 1 10 Output current IO (mA) 102 This product complies with the RoHS Directive (EU 2002/95/EC). UNR521xG Series Characteristics charts of UNR521TG VCE(sat)  IC hFE  IC 480 IC / IB = 10 Forward current transfer ratio hFE IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 120 10 1 VCE = 10 V 400 Ta = 75°C 320 25°C M Di ain sc te on na tin nc ue e/ d Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC  VCE 160 0.3 mA 0.2 mA 40 0.1 mA 2 4 6 8 10 12 Output current IO (µA) 3 2 1 102 10 Characteristics charts of UNR521VG int Collector current IC (mA) Ma Ta = 25°C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 80 0.6 mA 0.5 mA 40 0.4 mA 0 0 2 4 6 8 0.3 mA 0.2 mA 10 12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) en an IC  VCE 120 0 103 1 102 0.8 1 1.2 1 10 −1 10 −2 10 −1 1.4 240 IC / IB = 10 Ta = 75°C 25°C −25°C 1 10 102 Collector current IC (mA) SJH00218AED 10 102 hFE  IC 1 10 −2 1 Output current IO (mA) VCE(sat)  IC 10 −1 VO = 0.2 V Ta = 25°C 10 Input voltage VIN (V) 10 103 VIN  IO 102 10 0.6 102 10 Collector current IC (mA) 103 1 0.4 Collector-base voltage VCB (V) 160 102 10 VO = 5 V Ta = 25°C ue 1 80 IO  VIN 4 0 1 104 f = 1 MHz IE = 0 Ta = 25°C 5 10 −2 ce /D isc on tin Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB −25°C 160 Collector current IC (mA) Collector-emitter voltage VCE (V) 6 −25°C Input voltage VIN (V) 0 25°C Forward current transfer ratio hFE 0 Ta = 75°C 10 −1 240 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 80 103 VCE = 10 V 200 160 Ta = 75°C 120 25°C 80 −25°C 40 0 1 10 102 103 Collector current IC (mA) 15 This product complies with the RoHS Directive (EU 2002/95/EC). UNR521xG Series IO  VIN Output current IO (µA) 4 3 102 VO = 5 V Ta = 25°C 103 Input voltage VIN (V) f = 1 MHz IE = 0 Ta = 25°C 5 VIN  IO 104 102 VO = 0.2 V Ta = 25°C 10 1 M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 6 2 1 0.4 102 10 1 1.2 10 −2 10 −1 1.4 Ta = 25°C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 120 80 0.3 mA 0.2 mA 40 IC / IB = 10 1 Ta = 75°C 10 −1 25°C −25°C 4 6 8 10 12 Collector-emitter voltage VCE (V) Cob  VCB an f = 1 MHz IE = 0 Ta = 25°C int 4 Output current IO (µA) Ma 5 1 102 10 3 2 hFE  IC Ta = 75°C 320 240 25°C −25°C 160 80 0 103 VCE = 10 V 400 1 10 102 103 Collector current IC (mA) Collector current IC (mA) IO  VIN 104 en 6 10 −2 103 102 10 VIN  IO 102 VO = 5 V Ta = 25°C Input voltage VIN (V) 2 ce /D isc on tin 0 102 10 480 ue 0.1 mA 10 1 Output current IO (mA) VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) IC  VCE Collector current IC (mA) 0.8 Input voltage VIN (V) 160 0 0.6 Forward current transfer ratio hFE 1 Characteristics charts of UNR521ZG Collector output capacitance C (pF) (Common base, input open circuited) ob 10 −1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 Collector-base voltage VCB (V) VO = 0.2 V Ta = 25°C 10 1 10 −1 1 0 1 10 Collector-base voltage VCB (V) 16 10 1 102 1 0.4 0.6 0.8 1 1.2 Input voltage VIN (V) SJH00218AED 1.4 10 −2 10 −1 1 10 Output current IO (mA) 102 +0.05 ±0.050 0.30 −0.02 3 2 (0.65) 0.13 −0.02 1.30 ±0.10 ea 0.90 ±0.10 ±0.10 pla nc 2.10 ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan win(5°)g ww wi co on ce c fo .se ng ntin tin ty e ty ur 0.425 mi UR ue ued pe pe Pro d L co du n.p abo typ type ct life an ut e d as lat cy on es cle t i c.c in sta (0.49) o.j for ge p/e ma . n/ tio n. 1.25 ±0.10 2.00 ±0.20 Pl di ue isc on tin (5°) /D (0.65) (0.89) ce an 1 0 to 0.10 en int Ma M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). SMini3-F2 Unit: mm +0.05 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.