UNR52A8G0L

UNR52A8G0L

  • 厂商:

    NAIS(松下)

  • 封装:

    SC-85

  • 描述:

    UNR52A8G0L

  • 数据手册
  • 价格&库存
UNR52A8G0L 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR52A8G Silicon NPN epitaxial planar type For digital circuits  Package  Costs can be reduced through downsizing of the equipment and reduction of the number of parts.  SMini type package allowing easy automatic insertion through tape packing  Code SMini3-F2  Pin Name 1: Base 2: Emitter 3: Collector M Di ain sc te on na tin nc ue e/ d  Features Parameter Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open) VCEO Collector current IC Total power dissipation PT Junction temperature Tj Storage temperature Tstg  Electrical Characteristics Ta = 25°C±3°C Rating Unit 50 V 50 V 80 mA 150 mW 150 °C –55 to +150 °C Symbol ue Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n.  Absolute Maximum Ratings Ta = 25°C  Internal Connection Conditions B R1 (0.51 kΩ) C R2 (5.1 kΩ) E Min Typ Max Unit VCBO IC = 10 mA, IE = 0 50 V VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 mA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 mA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 2.0 mA int en an isc ce /D Collector-emitter voltage (Base open) on tin Collector-base voltage (Emitter open)  Marking Symbol: HF Ma Forward current transfer ratio Collector-emitter saturation voltage hFE VCE(sat) VCE = 10 V, IC = 5 mA 20 IC = 10 mA, IB = 0.3 mA Output voltage high-level VOH Output voltage low-level VOL Input resistance R1 –30% Resistance ratio R1 / R2 0.08 Transition frequency Note) fT VCC = 5 V, VB = 0.5 V, RL = 1 kW 0.25 4.9 VCC = 5 V, VB = 2.5 V, RL = 1 kW VCB = 10 V, IE = –2 mA, f = 200 MHz  V V 0.2 V 0.51 +30% kW 0.10 0.12  150 MHz Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: August 2008 SJH00289AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). UNR52A8G IC  VCE 240 Collector current IC (mA) IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 80 0.5 mA 160 Ta = 25°C 0.4 mA 0.3 mA 40 0.2 mA 10 IC / IB = 10 1 10−1 Ta = 85°C M Di ain sc te on na tin nc ue e/ d 80 VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) PT  Ta Total power dissipation PT (mW) UNR52A8G_VCE(sat)-IC UNR52A8G_IC-VCE UNR52A8G_PT-Ta 40 80 120 0 160 Ambient temperature Ta (°C) UNR52A8G_hFE-IC 300 Forward current transfer ratio hFE VCE = 10 V 200 Ta = 85°C 25°C 100 0 −25°C 1 10 102 isc VIN  IO en int Ma Input voltage VIN (V) an ce /D VO = 0.2 V Ta = 25°C 1 1 10 10 102 UNR52A8G_Cob-VCB UNR52A8G_IO-VIN IO  VIN VO = 5 V Ta = 25°C f = 1 MHz Ta = 25°C 4 1 10−1 2 10−2 0 1 10 102 Collector-base voltage VCB (V) 102 Output current IO (mA) 2 10−2 Collector current IC (mA) 1 10−1 −1 10 12 Collector-emitter voltage VCE (V) on tin UNR52A8G_VIN-IO 10 8 10 ue Collector current IC (mA) 102 4 Cob  VCB Collector output capacitance (Common base, input open circuited) Cob (pF) hFE  IC 0 O 0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty n.p bo yp peOutput current I (mA)duct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 25°C −25°C SJH00289AED 10−3 0 0.8 1.6 Input voltage VIN (V) an en (5°) ue on tin isc ce /D ±0.10 3 1 2 (0.65) (0.65) 1.30 ±0.10 0 to 0.10 ±0.10 (0.89) ±0.10 di p 1.25 Pl lan nclu ea e 0.90 se 2.10 pla m d m des v f ne ain ain oll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo (5°) .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge r (0.49) .jp . /en mat i o / n. int Ma M Di ain sc te on na tin nc ue e/ d 0.30 −0.02 +0.05 0.425 ±0.050 This product complies with the RoHS Directive (EU 2002/95/EC). UNR52A8G SMini3-F2 Unit: mm 2.00 ±0.20 SJH00289AED 0.13 −0.02 +0.05 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
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