This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Silicon NPN epitaxial planar type
For digital circuits
■ Package
• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
• SS-Mini type package, allowing automatic insertion through tape
packing.
• Code
SSMini3-F3
• Pin Name
1: Base
2: Emitter
3: Collector
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■ Features
■ Resistance by Part Number
Marking Symbol (R1)
8L
47 kΩ
8A
10 kΩ
8B
22 kΩ
8C
47 kΩ
8D
10 kΩ
8E
10 kΩ
8F
4.7 kΩ
8H
22 kΩ
8I
0.51 kΩ
8K
1 kΩ
8X
100 kΩ
8Y
100 kΩ
8Z
8M
47 kΩ
8N
47 kΩ
8O
4.7 kΩ
8P
10 kΩ
8Q
4.7 kΩ
EL
2.2 kΩ
EX
4.7 kΩ
EZ
22 kΩ
FD
2.2 kΩ
(R2)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
100 kΩ
47 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
int
en
an
ce
/D
isc
on
tin
ue
• UNR9210G
• UNR9211G
• UNR9212G
• UNR9213G
• UNR9214G
• UNR9215G
• UNR9216G
• UNR9217G
• UNR9218G
• UNR9219G
• UNR921AG
• UNR921BG
• UNR921CG
• UNR921DG
• UNR921EG
• UNR921FG
• UNR921KG
• UNR921LG
• UNR921MG
• UNR921NG
• UNR921TG
• UNR921VG
■ Internal Connection
R1
B
C
R2
E
Ma
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation
PT
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Publication date: July 2008
SJH00241BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
Conditions
Min
50
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
Collector-base cut-off current (Emitter open)
ICBO
VCB = 50 V, IE = 0
Typ
Max
Unit
V
V
0.1
µA
ICEO
VCE = 50 V, IB = 0
0.5
µA
UNR9210G/9215G/
9216G/9217G/921BG
IEBO
VEB = 6 V, IC = 0
0.01
mA
cut-off
UNR9213G/921AG
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector-emitter cut-off current (Base open)
Emitterbase
0.1
0.2
open)
0.5
UNR9211G
UNR921FG/921KG
UNR9219G
UNR9218G/921CG/921LG/921VG
Forward
UNR921VG
current
UNR9218G/921KG/921LG
hFE
transfer
UNR9219G/921DG/921FG
ratio
UNR9211G
20
60
80
UNR9210G/9215G/
9216G/9217G/921BG
Collector-emitter saturation voltage
VCE(sat)
80
400
160
460
IC = 10 mA, IB = 0.3 mA
0.25
V
IC = 10 mA, IB = 1.5 mA
UNR921VG
VOH
Output voltage low-level
VOL
ce
/D
isc
on
tin
ue
Output voltage high-level
UNR9213G/921BG/921KG
an
en
int
Transition frequency
UNR9218G
Ma
Input
6
35
UNR921NG/921TG
UNR921AG
1.5
2.0
30
UNR9213G/9214G/
921AG/921CG/921MG
UNR921EG
VCE = 10 V, IC = 5 mA
1.0
20
UNR9212G/921EG
UNR921DG
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current
UNR9212G/9214G/921DG/
(Collector 921EG/921MG/921NG/921TG
resistance UNR9219G
UNR921MG/921VG
UNR9216G/921FG/921LG/921NG
fT
R1
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
4.9
V
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
0.2
V
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
VCC = 5 V, VB = 10 V, RL = 1 kΩ
VCC = 5 V, VB = 6 V, RL = 1 kΩ
VCC = 5 V, VB = 5 V, RL = 1 kΩ
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
−30%
0.51
MHz
+30%
kΩ
1
2.2
4.7
UNR9211G/9214G/9215G/921KG
10
UNR9212G/9217G/921TG
22
UNR9210G/9213G/921DG/921EG
47
UNR921AG/921BG
100
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
SJH00241BED
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
Parameter
Symbol
Emitter-base resistance UNR921CG
R2
Rasistance UNR921MG
Min
Typ
Max
Unit
−30%
47
+30%
kΩ
R1/R2
0.047
UNR921NG
0.1
UNR9218G/9219G
0.08
0.10
0.12
UNR9214G
0.17
0.21
0.25
M
Di ain
sc te
on na
tin nc
ue e/
d
ratio
Conditions
UNR921TG
UNR921FG
0.47
0.8
1.0
UNR921AG/921VG
UNR921EG
UNR921DG
0.57
1.0
1.2
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UNR9211G/9212G/9213G/921LG
UNR921KG
0.47
0.37
1.70
2.13
2.60
1.70
2.14
2.60
3.7
4.7
5.7
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
125
100
75
50
25
0
40
80
120
160
Ambient temperature Ta (°C)
en
an
IC VCE
60
50
Collector current IC (mA)
Ta = 25°C
Ma
int
IB = 1.0 mA
0.9 mA
0.8 mA
40
30
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.1 mA
20
10
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
Collector-emitter saturation voltage VCE(sat) (V)
Characteristics charts of UNR9210G
VCE(sat) IC
102
hFE IC
400
IC / IB = 10
VCE = 10 V
Forward current transfer ratio hFE
0
ce
/D
isc
on
tin
ue
Total power dissipation PT (mW)
150
10
1
Ta = 75°C
25°C
10 −1
300
Ta = 75°C
25°C
200
−25°C
100
−25°C
10 −2
10 −1
0
1
10
Collector current IC (mA)
SJH00241BED
102
1
10
102
103
Collector current IC (mA)
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
IO VIN
Output current IO (µA)
4
3
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
5
VIN IO
104
102
VO = 0.2 V
Ta = 25°C
10
1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob VCB
6
2
1
0.4
102
10
Ta = 25°C
0.4 mA
0.3 mA
0.2 mA
40
10 −2
10 −1
1.4
102
1
25°C
2
4
6
8
10
12
Ta = 75°C
10 −1
−25˚C
Collector-emitter voltage VCE (V)
an
Cob VCB
int
en
6
f = 1 MHz
IE = 0
Ta = 25°C
Output current IO (µA)
4
1
3
2
hFE IC
VCE = 10 V
300
Ta = 75°C
200
25°C
−25°C
100
0
102
10
1
Collector current IC (mA)
10
102
103
Collector current IC (mA)
IO VIN
104
Ma
5
10 −2
10 −1
102
10
400
IC / IB = 10
10
ce
/D
isc
on
tin
0
1
Output current IO (mA)
ue
0.1 mA
0
1.2
103
102
10
VIN IO
102
VO = 5 V
Ta = 25°C
Input voltage VIN (V)
Collector current IC (mA)
0.7 mA
0.6 mA
0.5 mA
80
1.0
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
160
120
0.8
Input voltage VIN (V)
Characteristics charts of UNR9211G
IB = 1.0 mA
0.9 mA
0.8 mA
0.6
Forward current transfer ratio hFE
1
Collector-base voltage VCB (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
10 −1
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0
10 −1
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
10
Collector-base voltage VCB (V)
4
10
1
102
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00241BED
1.4
10 −2
10 −1
1
10
Output current IO (mA)
102
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Characteristics charts of UNR9212G
VCE(sat) IC
0.7 mA
0.6 mA
0.5 mA
0.4 mA
hFE IC
400
IC / IB = 10
VCE = 10 V
Forward current transfer ratio hFE
IB = 1.0 mA
0.9 mA
0.8 mA
120
102
10
300
Ta = 75°C
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
160
0.3 mA
0.2 mA
40
0.1 mA
2
4
6
8
10
12
10 −1
−25°C
10 −2
10 −1
Output current IO (µA)
4
3
2
1
0
10 −1
102
10
10
Characteristics charts of UNR9213G
int
Collector current IC (mA)
Ma
IB = 1.0 mA
Ta = 25°C
0.9 mA
0.8 mA
0.7 mA
0.6 mA
120
0.5 mA
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
Collector-emitter voltage VCE
12
(V)
Collector-emitter saturation voltage VCE(sat) (V)
en
an
IC VCE
160
0.6
0.8
1.0
10
1.2
VIN IO
1
10 −1
10 −2
10 −1
1.4
VO = 0.2 V
Ta = 25°C
1
hFE IC
400
IC / IB = 10
10
1
Ta = 75°C
10 −1
−25°C
10 −2
10 −1
1
10
Collector current IC (mA)
SJH00241BED
102
10
Output current IO (mA)
VCE(sat) IC
25°C
103
10
Input voltage VIN (V)
102
102
102
VO = 5 V
Ta = 25°C
102
1
0.4
Collector-base voltage VCB (V)
−25°C
Collector current IC (mA)
103
ce
/D
isc
on
tin
1
1
IO VIN
f = 1 MHz
IE = 0
Ta = 25°C
25°C
100
0
102
10
104
ue
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob VCB
5
200
Collector current IC (mA)
Collector-emitter voltage VCE (V)
6
1
Input voltage VIN (V)
0
Ta = 75°C
25°C
102
VCE = 10 V
Forward current transfer ratio hFE
0
1
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80
Ta = 75°C
300
25°C
−25°C
200
100
0
1
10
102
103
Collector current IC (mA)
5
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
IO VIN
104
Output current IO (µA)
5
4
3
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
VIN IO
102
VO = 5 V
Ta = 25°C
102
VO = 0.2 V
Ta = 25°C
10
1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob VCB
6
2
1
0.4
102
10
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
IB = 1.0 mA
120
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
40
0.2 mA
102
8
10
12
1
Ta = 75°C
an
en
int
1
f = 1 MHz
IE = 0
Ta = 25°C
Output current IO (µA)
3
2
VCE = 10 V
300
Ta = 75°C
200
25°C
−25°C
100
0
102
10
1
10
102
103
Collector current IC (mA)
Collector current IC (mA)
IO VIN
104
Ma
4
hFE IC
−25°C
Cob VCB
5
25°C
10 −1
10 −1
Collector-emitter voltage VCE (V)
6
102
10
400
IC / IB = 10
10 −2
1
Output current IO (mA)
10
ce
/D
isc
on
tin
6
10 −2
10 −1
1.4
ue
0.1 mA
4
1.2
VCE(sat) IC
Ta = 25°C
2
1.0
Forward current transfer ratio hFE
IC VCE
160
0
0.8
Input voltage VIN (V)
Characteristics charts of UNR9214G
0
0.6
103
102
10
VIN IO
102
VO = 5 V
Ta = 25°C
Input voltage VIN (V)
1
Collector-base voltage VCB (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
10 −1
di
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0
10 −1
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
10
Collector-base voltage VCB (V)
6
10
1
102
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00241BED
1.4
10 −2
10 −1
1
10
Output current IO (mA)
102
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Characteristics charts of UNR9215G
VCE(sat) IC
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
hFE IC
400
IC / IB = 10
VCE = 10 V
10
300
Ta = 75°C
200
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector current IC (mA)
120
102
Forward current transfer ratio hFE
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
160
0.2 mA
0.1 mA
0
2
4
6
8
10
12
10 −1
10
Collector-emitter voltage VCE (V)
Output current IO (µA)
2
1
102
Collector current IC (mA)
Ma
int
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
Collector-emitter voltage VCE
12
(V)
Collector-emitter saturation voltage VCE(sat) (V)
en
an
IC VCE
80
10
VO = 5 V
Ta = 25°C
0.6
0.8
1.0
1.2
VIN IO
10 −1
10 −2
10 −1
1.4
VO = 0.2 V
Ta = 25°C
1
1
102
10
Output current IO (mA)
VCE(sat) IC
hFE IC
400
IC / IB = 10
10
1
Ta = 75°C
25°C
10 −1
103
10
Input voltage VIN (V)
102
102
102
10
1
0.4
Characteristics charts of UNR9216G
120
1
Collector current IC (mA)
102
ce
/D
isc
on
tin
10
Collector-base voltage VCB (V)
160
102
10
103
ue
Collector output capacitance
(Common base, input open circuited) Cob (pF)
3
1
1
IO VIN
4
0
10 −1
0
10 −1
104
f = 1 MHz
IE = 0
Ta = 25°C
5
−25°C
100
Collector current IC (mA)
Cob VCB
6
25°C
−25°C
−2
Input voltage VIN (V)
0
Ta = 75°C
25°C
VCE = 10 V
Forward current transfer ratio hFE
40
1
di
p
Pl
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ea
e
se
pla m d m des
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co L a d t ty
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0.3 mA
Ta = 75°C
300
25°C
−25°C
200
100
−25°C
10 −2
10 −1
0
1
10
Collector current IC (mA)
SJH00241BED
102
1
10
102
103
Collector current IC (mA)
7
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
Cob VCB
IO VIN
Output current IO (µA)
5
VIN IO
104
f = 1 MHz
IE = 0
Ta = 25°C
4
103
102
VO = 0.2 V
Ta = 25°C
10
1
M
Di ain
sc te
on na
tin nc
ue e/
d
3
102
VO = 5 V
Ta = 25°C
Input voltage VIN (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
6
2
10 −1
1
0.4
102
10
Collector-base voltage VCB (V)
T = 25°C
a
IB =1 .0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
40
20
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
an
Cob VCB
int
en
6
1
10
f = 1 MHz
IE = 0
Ta = 25°C
3
2
102
10
hFE IC
400
Ta = 75°C
25°C
−1
VCE = 10 V
300
200
Ta = 75°C
25°C
−25°C
100
−25°C
10 −2
10 −1
Output current IO (µA)
4
1
Output current IO (mA)
IC / IB = 10
1
0
102
10
1
Collector current IC (mA)
10
102
103
Collector current IC (mA)
IO VIN
104
Ma
5
10 −2
10 −1
1.4
10
ce
/D
isc
on
tin
0
Collector output capacitance
(Common base, input open circuited) Cob (pF)
102
ue
0.1 mA
0
1.2
VO = 5 V
Ta = 25°C
103
102
10
VIN IO
102
Input voltage VIN (V)
Collector current IC (mA)
80
60
1.0
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
100
0.8
Input voltage VIN (V)
Characteristics charts of UNR9217G
120
0.6
Forward current transfer ratio hFE
1
di
p
Pl
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co L a d t ty
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life
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cy
on es
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0
10 −1
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
10
Collector-base voltage VCB (V)
8
10
1
102
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00241BED
1.4
10 −2
10 − −1
1
10
Output current IO (mA)
102
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Characteristics charts of UNR9218G
VCE(sat) IC
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
160
120
hFE IC
160
IC / IB = 10
VCE = 10 V
10
1
120
Ta = 75°C
80
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector current IC (mA)
200
102
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
240
80
0.3 mA
40
0.2 mA
0.1 mA
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
Output current IO (µA)
4
3
2
1
0
10 −1
1
102
10
Ma
int
Collector current IC (mA)
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
120
0.5 mA
0.4 mA
0.3 mA
80
40
0.2 mA
0.1 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
Collector-emitter saturation voltage VCE(sat) (V)
en
an
IC VCE
160
0
102
10
1
10
0.8
1.0
1.2
VIN IO
10 −1
10 −2
10 −1
1.4
VO = 0.2 V
Ta = 25°C
1
1
10
102
Output current IO (mA)
VCE(sat) IC
hFE IC
160
IC / IB = 10
10
1
Ta = 75°C
25°C
10 −1
103
10
Input voltage VIN (V)
102
102
102
VO = 5 V
Ta = 25°C
0.6
10
Collector current IC (mA)
102
1
0.4
Characteristics charts of UNR9219G
200
1
103
ce
/D
isc
on
tin
Collector-base voltage VCB (V)
240
−25°C
IO VIN
ue
Collector output capacitance
(Common base, input open circuited) Cob (pF)
5
10 −2
10 −1
104
f = 1 MHz
IE = 0
Ta = 25°C
25°C
−25°C
40
Collector current IC (mA)
Cob VCB
6
10
Input voltage VIN (V)
0
25°C
−1
VCE = 10 V
Forward current transfer ratio hFE
0
Ta = 75°C
di
p
Pl
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life
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cy
on es
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0.6 mA
0.5 mA
0.4 mA
120
Ta = 75°C
80
25°C
−25°C
40
−25°C
10 −2
10 −1
0
1
10
Collector current IC (mA)
SJH00241BED
102
1
10
102
103
Collector current IC (mA)
9
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
IO VIN
104
Output current IO (µA)
5
4
3
VIN IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
102
VO = 0.2 V
Ta = 25°C
10
1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob VCB
6
2
1
0.4
102
Characteristics charts of UNR921AG
Ta = 25°C
IB = 0.5 mA
0.4 mA
0.3 mA
80
0.2 mA
40
10 −2
10 −1
1.4
0
2
4
6
8
10
VCE(sat) IC
hFE IC
VCE = 10 V
Ta = 75°C
25°C
−25°C
10 −2
10 −1
an
en
int
Output current IO (mA)
Ma
1
20
Collector-base voltage VCB (V)
25°C
−25°C
200
100
1
10
102
103
Collector current IC (mA)
Collector current IC (mA)
IO VIN
VIN IO
102
VO = 5 V
Ta = 25°C
1
10 −1
10 −2
10
Ta = 75°C
300
0
10 −1
102
10
10
f = 1 MHz
Ta = 25°C
0
102
10
Output current IO (mA)
10 −1
Cob VCB
10
1
Input voltage VIN (V)
400
Collector-emitter voltage VCE (V)
1
1.2
IC / IB = 10
ce
/D
isc
on
tin
0
1.0
ue
0.1 mA
1
0.8
Input voltage VIN (V)
Collector current IC (mA)
120
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
0.6
Forward current transfer ratio hFE
10
di
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Pl
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co L a d t ty
du
n.p bo yp pe
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life
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cy
on es
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co fo
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1
Collector-base voltage VCB (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
10 −1
1
0
10 −1
10
10
VO = 0.2 V
Ta = 25°C
10
1
0
1
2
Input voltage VIN (V)
SJH00241BED
3
1
10
Output current IO (mA)
102
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Characteristics charts of UNR921BG
VCE(sat) IC
Ta = 25°C
IB = 0.5 mA
0.4 mA
80
0.3 mA
hFE IC
IC / IB = 10
VCE = 10 V
400
1
Ta = 75°C
25°C
300
−25°C
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector current IC (mA)
100
10
Forward current transfer ratio hFE
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
120
0.2 mA
40
0.1 mA
20
2
4
6
8
10
10 −2
10 −1
30
40
Collector-base voltage VCB
(V)
10 −1
0.4
Characteristics charts of UNR921CG
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
Ma
120
Collector current IC (mA)
Ta = 25°C
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
Collector-emitter voltage VCE (V)
Collector-emitter saturation voltage VCE(sat) (V)
int
en
an
IC VCE
IB = 1.0 mA
1
10
1.2
10
1
10 −1
10 −1
1.6
VO = 0.2 V
Ta = 25°C
1
10
Input voltage VIN (V)
Output current IO (mA)
VCE(sat) IC
hFE IC
1
IC / IB = 10
25°C
−25°C
300
Collector current IC (mA)
SJH00241BED
102
Ta = 75°C
25°C
200
−25°C
100
0
10
102
VCE = 10 V
Ta = 75°C
10 −1
10 −2
1
103
VIN IO
102
VO = 5 V
Ta = 25°C
0.8
102
Collector current IC (mA)
1
ue
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Output current IO (mA)
20
0
102
10
IO VIN
ce
/D
isc
on
tin
10
1
10
f = 1 MHz
Ta = 25°C
0
100
Collector current IC (mA)
Cob VCB
1
200
−25°C
Collector-emitter voltage VCE (V)
10
Ta = 75°C
Input voltage VIN (V)
0
25°C
Forward current transfer ratio hFE
0
10 −1
di
p
Pl
lan nclu
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pla m d m des
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co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
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cy
on es
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sta
co fo
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60
1
10
102
103
Collector current IC (mA)
11
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
IO VIN
10
VO = 0.2 V
Ta = 25°C
VO = 5 V
Ta = 25°C
Input voltage VIN (V)
Output current IO (mA)
f = 1 MHz
Ta = 25°C
VIN IO
10
102
10
1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob VCB
102
10
20
30
0
Collector-base voltage VCB (V)
20
15
0.2 mA
0.1 mA
10
102
VCE = 10 V
10
1
Ta = 75°C
25°C
ue
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
Cob VCB
int
en
an
6
4
Output current IO (µA)
Ma
5
10 −2
10 −1
3
2
25°C
−25°C
120
80
40
0
1
102
10
1
10
102
103
Collector current IC (mA)
Collector current IC (mA)
IO VIN
104
f = 1 MHz
IE = 0
Ta = 25°C
Ta = 75°C
−25°C
ce
/D
isc
on
tin
0
hFE IC
160
IC / IB = 10
10 −1
102
10
Output current IO (mA)
VIN IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
Collector current IC (mA)
Ta = 25°C
0.9 mA
0.8 mA 0.5 mA
0.4 mA
0.7 mA
25
0.3 mA
0.6 mA
IB = 1.0 mA
5
Collector output capacitance
(Common base, input open circuited) Cob (pF)
1
0.8
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
30
102
10
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
0
10 −1
1
10
Collector-base voltage VCB (V)
12
0.4
Input voltage VIN (V)
Characteristics charts of UNR921DG
0
10 −1
10 −1
40
Forward current transfer ratio hFE
0
di
p
Pl
lan nclu
ea
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se
pla m d m des
ne ain ain foll
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d te t o
p:/ fo
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.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
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1
1
102
1
1.5
2.0
2.5
3.0
3.5
Input voltage VIN (V)
SJH00241BED
4.0
10 −2
10 −1
1
10
Output current IO (mA)
102
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Characteristics charts of UNR921EG
VCE(sat) IC
40
0.3 mA 0.2 mA
0.4 mA
0.5 mA
0.1 mA
10
hFE IC
160
IC / IB = 10
VCE = 10 V
10
Ta = 75°C
120
25°C
−25°C
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector current IC (mA)
50
2
Forward current transfer ratio hFE
IB = 1.0 mA 0.7 mA
Ta = 25°C
0.9 mA
0.6 mA
0.8 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
60
20
10
2
4
6
8
10
Collector-emitter voltage VCE
12
(V)
Output current IO (µA)
2
1
102
en
an
IC VCE
Ma
int
Collector current IC (mA)
Ta = 25°C
0.9 mA
0.8 mA
0.7 mA
0.6 mA
160
120
IB = 1.0 mA
0.5 mA
80
0.4 mA
0.3 mA
40
0.2 mA
0.1 mA
0
0
2
4
6
8
10
Collector-emitter voltage VCE
12
(V)
Collector-emitter saturation voltage VCE(sat) (V)
Characteristics charts of UNR921FG
200
1
VO = 5 V
Ta = 25°C
2.0
2.5
3.0
3.5
VIN IO
10 −1
10 −2
10 −1
4.0
VO = 0.2 V
Ta = 25°C
1
1
102
10
Output current IO (mA)
VCE(sat) IC
hFE IC
160
IC / IB = 10
10
Ta = 75°C
1
103
10
Input voltage VIN (V)
102
102
102
10
1
1.5
10
Collector current IC (mA)
102
ce
/D
isc
on
tin
10
Collector-base voltage VCB (V)
240
102
10
103
ue
Collector output capacitance
(Common base, input open circuited) Cob (pF)
3
1
0
1
IO VIN
4
0
10 −1
40
−25°C
10 −2
10 −1
104
f = 1MHz
IE = 0
Ta = 25°C
5
80
Collector current IC (mA)
Cob VCB
6
25°C
10 −1
Input voltage VIN (V)
0
Ta = 75°C
VCE = 10 V
Forward current transfer ratio hFE
0
1
di
p
Pl
lan nclu
ea
e
se
pla m d m des
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d te t o
p:/ fo
/w llo dis disc nan enan wing
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.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
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30
25°C
10 −1
120
Ta = 75°C
80
25°C
−25°C
40
−25°C
10 −2
10 −1
0
1
10
Collector current IC (mA)
SJH00241BED
102
1
10
102
103
Collector current IC (mA)
13
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
IO VIN
104
Output current IO (µA)
5
4
3
103
Input voltage VIN (V)
f = 1 MHz
IE = 0
Ta = 25°C
VIN IO
102
VO = 5 V
Ta = 25°C
102
VO = 0.2 V
Ta = 25°C
10
1
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Cob VCB
6
2
1
0.4
102
10
Collector current IC (mA)
200
160
IB = 1.2 mA
1.0 mA
0.8 mA
0.6 mA
0.4 mA
40
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
Cob VCB
en
an
6
Input voltage VIN (V)
4
1.4
3
2
10
1
10 −1
25°C
Ta = 75°C
−25°C
10 −2
1
102
1
10
Collector-base voltage VCB (V)
102
103
VIN IO
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
10
Output current IO (mA)
SJH00241BED
hFE IC
VCE = 10 V
200
160
Ta = 75°C
120
25°C
80
−25°C
40
1
10
102
Collector current IC (mA)
Collector current IC (mA)
10 −2
10 −1
102
10
240
0
10
1
Output current IO (mA)
1
0
10 −2
10 −1
IC / IB = 10
102
f = 1 MHz
IE = 0
Ta = 25°C
Ma
int
5
102
ce
/D
isc
on
tin
0.2 mA
0
1.2
ue
Ta = 25°C
80
1.0
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
120
0.8
Input voltage VIN (V)
Characteristics charts of UNR921KG
240
0.6
Forward current transfer ratio hFE
1
Collector-base voltage VCB (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
10 −1
di
p
Pl
lan nclu
ea
e
se
pla m d m des
ne ain ain foll
htt visit
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
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/
n.
0
10 −1
14
10
1
102
103
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Characteristics charts of UNR921LG
VCE(sat) IC
160
IB = 1.0 mA
0.8 mA
120
240
IC / IB = 10
10
1
VCE = 10 V
200
Ta = 75°C
160
120
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector current IC (mA)
200
hFE IC
102
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
240
0.4 mA
40
0.2 mA
0
0
2
4
6
8
10
12
Input voltage VIN (V)
1
102
Ma
int
Collector current IC (mA)
0.5 mA
0.4 mA
0.3 mA
0.2 mA
40
0
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
80
0.1 mA
0
2
4
6
8
1
10
102
103
Collector current IC (mA)
10 −1
10
Collector-emitter voltage VCE
12
(V)
Collector-emitter saturation voltage VCE(sat) (V)
en
an
IC VCE
120
0
103
1
10 −2
10 −1
Characteristics charts of UNR921MG
160
102
10
ce
/D
isc
on
tin
10
Collector-base voltage VCB (V)
200
10
VO = 0.2 V
Ta = 25°C
ue
Collector output capacitance
(Common base, input open circuited) Cob (pF)
2
240
40
VIN IO
3
1
10 −2
102
f = 1 MHz
IE = 0
Ta = 25°C
4
0
−25°C
−25°C
80
Collector current IC (mA)
Cob VCB
5
25°C
10 −1
1
Collector-emitter voltage VCE (V)
6
Ta = 75°C
1
102
10
Output current IO (mA)
VCE(sat) IC
10
hFE IC
IC / IB = 10
1
Ta = 75°C
25°C
10 −1
−25˚C
10
−2
10 −3
500
Forward current transfer ratio hFE
80
25°C
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SJH00241BED
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400
300
Ta = 75°C
25°C
200
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100
0
1
10
102
103
Collector current IC (mA)
15
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
Transistors with built-in Resistor
IO VIN
104
VIN IO
102
VO = 5 V
Ta = 25°C
f = 1 MHz
IE = 0
Ta = 25°C
VO = 0.2 V
Ta = 25°C
3
2
103
10
Input voltage VIN (V)
Output current IO (µA)
4
102
1
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Collector output capacitance
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Cob VCB
5
0.4
0.8
1.0
1.2
1.4
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
120
80
0.3 mA
0.2 mA
40
10
IC / IB = 10
1
Ta = 75°C
10 −1
25°C
6
8
10
12
10 −2
1
Collector-emitter voltage VCE (V)
Cob VCB
an
6
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Output current IO (µA)
4
3
2
VCE = 10 V
400
Ta = 75°C
320
25°C
240
−25°C
160
80
0
103
1
Collector current IC (mA)
10
102
103
Collector current IC (mA)
IO VIN
104
f = 1 MHz
IE = 0
Ta = 25°C
Ma
5
102
10
VIN IO
102
VO = 5 V
Ta = 25°C
103
Input voltage VIN (V)
4
hFE IC
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0.1 mA
0
1
Output current IO (mA)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
160
Collector current IC (mA)
0.6
Input voltage VIN (V)
Characteristics charts of UNR921NG
0
10 −2
10 −1
1
102
10
Forward current transfer ratio hFE
1
Collector-base voltage VCB (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
10 −1
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0
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Ta = 25°C
10
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1
0
1
10
Collector-base voltage VCB (V)
16
10
1
102
1
0.4
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJH00241BED
1.4
10 −2
10 −1
1
10
Output current IO (mA)
102
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Characteristics charts of UNR921TG
VCE(sat) IC
80
hFE IC
400
IC / IB = 10
Forward current transfer ratio hFE
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
120
103
Ta = 75°C
102
VCE = 10 V
Ta = 75°C
300
25°C
M
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Collector current IC (mA)
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (mV)
IC VCE
160
0.2 mA
40
0.1 mA
0
2
4
6
8
10
Cob VCB
−25°C
100
10
1
0
10 −1
102
10
102
1
102
10
Collector current IC (mA)
IO VIN
4
VIN IO
102
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
10
3
Output current IO (mA)
2
1
1
10 −1
10
1
10 −2
102
10
10 −3
0.25
Collector-base voltage VCB (V)
Characteristics charts of UNR921VG
int
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Ta = 25°C
IB = 1.0 mA
120
0.9 mA
0.8 mA
0.7 mA
80
0.6 mA
0.5 mA
40
0.4 mA
0
0.3 mA
0.2 mA
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
Collector-emitter saturation voltage VCE(sat) (V)
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160
0.75
10 −1
10 −3
1.25
VCE(sat) IC
10
Ta = 75°C
25°C
102
Collector current IC (mA)
SJH00241BED
10
102
103
VCE = 10 V
200
160
Ta = 75°C
120
25°C
80
−25°C
40
0
10
1
240
IC / IB = 10
−25°C
10 −2
1
10 −1
hFE IC
1
10 −1
10 −2
Output current IO (mA)
Input voltage VIN (V)
Forward current transfer ratio hFE
1
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Collector output capacitance
(Common base, input open circuited) Cob (pF)
200
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
−25°C
Input voltage VIN (V)
0
25°C
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Collector current IC (mA)
17
18
4
3
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0
Output current IO (µA)
5
f = 1 MHz
IE = 0
Ta = 25°C
1
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Collector-base voltage VCB (V)
103
102
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Input voltage VIN (V)
6
Input voltage VIN (V)
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UNR921xG Series
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
Cob VCB
104
IO VIN
102
0.6
0.8
1.0
SJH00241BED
VIN IO
VO = 5 V
Ta = 25°C
10
1.2
1.4
10 −2
10 −1
VO = 0.2 V
Ta = 25°C
10
1
10 −1
1
Output current IO (mA)
1
10
102
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+0.05
−0.03
3
(0.50)
±0.05
0.26 −0.02
+0.05
1
2
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1.00 ±0.05
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−0.03
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Transistors with built-in Resistor
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
SSMini3-F3
Unit: mm
1.60 −0.03
+0.05
SJH00241BED
0.13 −0.02
+0.05
19
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
M
Di ain
sc te
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
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Ma
int
en
an
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
