UNR92ANG0L

UNR92ANG0L

  • 厂商:

    NAIS(松下)

  • 封装:

    SC89,SOT490

  • 描述:

    UNR92ANG0L

  • 详情介绍
  • 数据手册
  • 价格&库存
UNR92ANG0L 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR92ANG Silicon NPN epitaxial planar type For digital circuits  Package  Optimum for high-density mounting and downsizing of the equipment  Contribute to low power consumption  Code SSMini3-F3  Pin Name 1: Base 2: Emitter 3: Collector M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open) VCEO IC Total power dissipation PT Junction temperature Tj Storage temperature Tstg Unit 50 V 50 V 80 mA 125 mW 125 °C –55 to +125 °C  Marking Symbol: KL  Internal Connection B R1 C R2 E ue Collector current Rating di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Parameter on tin  Electrical Characteristics Ta = 25°C±3°C Symbol Conditions Min Typ Max Unit VCBO IC = 10 mA, IE = 0 50 V VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 mA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 mA VEB = 6 V, IC = 0 0.2 mA 400  0.25 V ce /D Collector-base voltage (Emitter open) isc Parameter Ma int en an Collector-emitter voltage (Base open) Emitter-base cutoff current (Collector open) IEBO Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA Output voltage high-level VOH VCC = 5 V, VB = 0.5 V, RL = 1 kW Output voltage low-level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kW Input resistance R1 Resistance ratio R1 / R2 Transition frequency Note) fT 80 4.9 —30% VCB = 10 V, IE = —2 mA, f = 200 MHz V 4.7 0.2 V +30% kW 0.1  150 MHz Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: October 2007 SJH00257AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). UNR92ANG UNR92ANG_PT-Ta UNR92ANG_VCE(sat)-IC UNR92ANG_IC-VCE IC  VCE VCE(sat)  IC Ta = 25°C Collector current IC (mA) 80 100 50 IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 40 0.1 mA 10 IC / IB = 10 1 Ta = 85°C 10−1 M Di ain sc te on na tin nc ue e/ d Total power dissipation PT (mW) 150 Collector-emitter saturation voltage VCE(sat) (V) PT  Ta 40 80 0 120 Ambient temperature Ta (°C) UNR92ANG_hFE-IC hFE  IC Collector output capacitance (Common base, input open circuited) Cob (pF) Forward current transfer ratio hFE Ta = 85°C 25°C 200 −25°C 100 0 1 10 102 isc ce /D en int Ma Input voltage VIN (V) an VO = 0.2 V Ta = 25°C 10 1 1 10 10 102 UNR92ANG_Cob-VCB UNR92ANG_IO-VIN IO  VIN VO = 5 V Ta = 25°C f = 1 MHz Ta = 25°C 4 1 10−1 2 10−2 0 1 10 102 Collector-base voltage VCB (V) 102 Output current IO (mA) 2 10−2 Collector current IC (mA) 1 10−1 −1 10 12 Collector-emitter voltage VCE (V) on tin UNR92ANG_VIN-IO VIN  IO 8 10 ue Collector current IC (mA) 102 4 Cob  VCB 300 VCE = 10 V 0 O 0 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty n.p bo yp peOutput current I (mA)duct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 25°C −25°C SJH00257AED 10−3 0 0.8 1.6 Input voltage VIN (V) an en ue on tin isc ce /D +0.05 −0.03 1 2 (0.50) (0.50) 1.00 ±0.05 (5°) 0 to 0.10 +0.05 −0.03 ±0.05 di p 0.85 Pl lan nclu ea e 1.60 se pla m0.70 d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo (5°) .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /e(0.45) a n/ tio n. int Ma M Di ain sc te on na tin nc ue e/ d 3 0.375 ±0.05 This product complies with the RoHS Directive (EU 2002/95/EC). UNR92ANG SSMini3-F3 Unit: mm 1.60 −0.03 +0.05 0.26 −0.02 +0.05 SJH00257AED 0.13 −0.02 +0.05 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
UNR92ANG0L
物料型号:UNR92ANG

器件简介: - 符合RoHS指令(EU 2002/95/EC) - 硅NPN外延平面型,适用于高密度安装和设备小型化,有助于降低功耗

引脚分配: - 1: 基极(Base) - 2: 发射极(Emitter) - 3: 集电极(Collector)

参数特性: - 绝对最大额定值包括集电极-基极电压(VCBO) 50V,集电极-发射极电压(VCEO) 50V,集电极电流(IC) 80mA,总功耗(PT) 125mW,结温(Tj) 125°C,存储温度(Tstg) -55至+125°C - 电气特性在Ta = 25°C±3°C条件下,包括不同条件下的VCBO、VCEO、ICBO、ICEO、IEBO、hFE、VCE(sat)、VOH、VOL、R1、R1/R2比率和fT等参数

功能详解: - 提供了关于晶体管的正向电流传输比(hFE)、集电极-发射极饱和电压(VCE(sat))、输出高电平(VOH)、输出低电平(VOL)、输入电阻(R1)、基区宽度调制效应(Cob)、功耗(PT)与环境温度(Ta)的关系等图表

应用信息: - 适用于数字电路,有助于实现设备的高密度安装和小型化,同时降低功耗

封装信息: - 封装类型为SSMini3-F3,包含尺寸和标记符号(KL)等信息
UNR92ANG0L 价格&库存

很抱歉,暂时无法提供与“UNR92ANG0L”相匹配的价格&库存,您可以联系我们找货

免费人工找货