This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNRF2A1
Silicon NPN epitaxial planar type
Unit: mm
3
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2
• Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package
0.6 mm × 1.0 mm (height 0.39 mm)
1
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
80
mA
100
mW
125
°C
−55 to +125
°C
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
0.25±0.05
1
0.50±0.05
Parameter
IC
0.25±0.05
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■ Absolute Maximum Ratings Ta = 25°C
Collector current
0.39+0.01
−0.03
1.00±0.05
0.15±0.05
0.05±0.03
0.35±0.01
■ Features
0.60±0.05
For digital circuits
3
0.65±0.01
2
0.05±0.03
1: Base
2: Emitter
3: Collector
ML3-N2 Package
Marking Symbol: 1T
Internal Connection
R1 (10 kΩ)
B
R2
(10 kΩ)
C
E
Parameter
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■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
50
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Collector-base cutoff current (Emitter open)
VCB = 50 V, IE = 0
0.1
µA
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.5
mA
hFE
VCE = 10 V, IC = 5 mA
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ICBO
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 0.3 mA
Output voltage high level
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Output voltage low level
VOL
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
Input resistance
R1
Resistance ratio
R1 / R 2
Transition frequency
fT
35
0.25
4.9
−30%
0.8
VCB = 10 V, IE = −2 mA, f = 200 MHz
V
V
0.2
V
10
+30%
kΩ
1.0
1.2
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2005
SJH00070BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNRF2A1
IC VCE
80
Collector current IC (mA)
80
60
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
60
50
0.2 mA
40
10
1
Ta = 85°C
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Total power dissipation PT (mW)
0.9 mA
70 0.8 mA
100
VCE(sat) IC
IB = 1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
PT Ta
120
40
20
30
20
0.1 mA
10
0
40
60
80
100 120 140
Ambient temperature Ta (°C)
Forward current transfer ratio hFE
Ta = 85°C
25°C
150
100
−25°C
50
0
1
10
100
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Collector current IC (mA)
VIN IO
100
int
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Input voltage VIN (V)
en
an
VO = 0.2 V
Ta = 25°C
10
1
0.1
1
2
4
6
10
12
0.01
1
10
IC / IB = 10
1
10
100
IO VIN
VO = 5 V
Ta = 25°C
f = 1 MHz
Ta = 25°C
10
1
0.1
0
10
20
30
Collector-base voltage VCB (V)
100
SJH00070BED
40
1 000
Collector current IC (mA)
100
10
Output current IO (mA)
2
8
Cob VCB
VCE = 10 V
200
25°C
Collector-emitter voltage VCE (V)
hFE IC
250
0
Output current IO (mA)
20
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
0
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0
−25°C
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Ta = 25°C
0.1
0
0.5
1.0
1.5
2.0
Input voltage VIN (V)
2.5
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
