UNRF2A300A

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNRF2A3 Silicon NPN epitaxial planar type Unit: mm 3 M Di ain sc te on na tin nc ue e/ d 2 • Reduction of assembly cost and package size with 1006 type mold leadless package is possible • Maximum package height (0.4 mm) contributes to develop thinner equipments 1 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V 80 mA 100 mW 125 °C −55 to +125 °C Total power dissipation PT Junction temperature Tj Storage temperature Tstg 0.25±0.05 1 0.50±0.05 Parameter IC 0.25±0.05 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ■ Absolute Maximum Ratings Ta = 25°C Collector current 0.39+0.01 −0.03 1.00±0.05 0.15±0.05 0.05±0.03 0.35±0.01 ■ Features 0.60±0.05 For digital circuits 3 2 0.05±0.03 0.65±0.01 1: Base 2: Emitter 3: Collector ML3-N2 Package Marking Symbol: 1W Internal Connection R1 (47 kΩ) B R2 (47 kΩ) C E Parameter ce /D isc on tin ue ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) VCB = 50 V, IE = 0 0.1 µA ICEO VCE = 50 V, IB = 0 0.5 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.1 mA hFE VCE = 10 V, IC = 5 mA Ma int en an ICBO Collector-emitter cutoff current (Base open) Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.3 mA Output voltage high-level VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = 5 V, VB = 3.5 V, RL = 1 kΩ Input resistance R1 Resistance ratio R1 / R 2 Transition frequency fT  80 0.25 4.9 −30% 0.8 VCB = 10 V, IE = −2 mA, f = 200 MHz V V 0.2 V 47 +30% kΩ 1.0 1.2 150  MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: May 2005 SJH00059CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). UNRF2A3 IC  VCE IB = 1.0 mA 0.9 mA 0.8 mA Collector current IC (mA) 100 80 60 VCE(sat)  IC 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 60 0.2 mA 40 10 1 85°C M Di ain sc te on na tin nc ue e/ d Total power dissipation PT (mW) 80 Collector-emitter saturation voltage VCE(sat) (V) PT  Ta 120 40 0.1 mA 20 20 40 80 0 120 Ambient temperature Ta (°C) Ta = 85°C 25°C 250 −25°C 200 150 100 50 0 1 10 100 VIN  IO int en an VO = 0.2 V Ta = 25°C Ma Input voltage VIN (V) 10 6 10 ce /D isc on tin Collector current IC (mA) 100 4 1 1 0 10 20 10 30 Collector-base voltage VCB (V) 100 Output current IO (mA) 2 10 12 IC / IB = 10 SJH00059CED 1 10 IO  VIN 10 40 100 Collector current IC (mA) f = 1 MHz Ta = 25°C 1 0.1 0.1 8 Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob Forward current transfer ratio hFE VCE = 10 V 2 0.01 0.1 Collector-emitter voltage VCE (V) hFE  IC 300 0 Output current IO (mA) 0 ue 0 25°C di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Ta = 25°C Ta = −25°C 0.1 VO = 5 V Ta = 25°C 1 0.1 0.01 0 1 2 Input voltage VIN (V) Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.