UP01213G0L

UP01213G0L

  • 厂商:

    NAIS(松下)

  • 封装:

    SOT665

  • 描述:

    UP01213G0L

  • 数据手册
  • 价格&库存
UP01213G0L 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP01213G Silicon NPN epitaxial planar type For digital circuits ■ Package • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half • Code SSMini5-F3 • Pin Name 1: Base (Tr1) 2: Emitter 3: Base (Tr2) ■ Basic Part Number • UNR1213 × 2 ■ Marking Symbol: 9L ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO Collector current IC Total power dissipation PT Junction temperature Tj Storage temperature Tstg 4: Collector (Tr2) 5: Collector (Tr1) di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. M Di ain sc te on na tin nc ue e/ d ■ Features 50 V 100 mA 125 mW 125 °C −55 to +125 °C ■ Internal Connection (C1) 5 (C2) 4 Tr1 Tr2 R1 (47 kΩ) R1 (47 kΩ) R2 R2 (47 kΩ) (47 kΩ) 1 (B1) 2 (E) Min Typ 3 (B2) Symbol ce /D isc on tin Parameter ue ■ Electrical Characteristics Ta = 25°C ± 3°C Conditions Max Unit VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 µA IEBO VEB = 6 V, IC = 0 0.1 mA hFE VCE = 10 V, IC = 5 mA en an Collector-base voltage (Emitter open) int Emitter-base cutoff current (Collector open) Ma Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.3 mA Output voltage high-level VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = 5 V, VB = 3.5 V, RL = 1 kΩ Input resistance R1 Resistance ratio R1 / R 2 Transition frequency fT  80 0.25 4.9 −30% 0.8 VCB = 10 V, IE = −2 mA, f = 200 MHz V V 0.2 V 47 +30% kΩ 1.0 1.2 150  MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: September 2007 SJJ00364AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). UP01213G 120 Collector current IC (mA) 120 100 80 60 Ta = 25°C VCE(sat)  IC IB = 1.0 mA 0.9 mA 0.8 mA 0.6 mA 0.5 mA 100 0.4 mA 0.7 mA 80 0.3 mA 60 0.2 mA Collector-emitter saturation voltage VCE(sat) (V) IC  VCE 140 100 IC / IB = 10 10 1 0.1 M Di ain sc te on na tin nc ue e/ d Total power dissipation PT (mW) PT  Ta 140 40 0.1 mA 20 80 0 120 Ambient temperature Ta (°C) 25°C 250 −25°C 150 100 50 0 1 10 100 an en int Ma 2 6 8 10 12 0.001 0.1 0 2 10 4 6 8 Input voltage VIN (V) SJJ00364AED 10 100 VIN  IO 100 1 0.1 1 Collector current IC (mA) VO = 5 V Ta = 25°C 10 ce /D isc on tin Collector current IC (mA) 100 Output current IO (mA) Ta = 85°C 200 4 IO  VIN VCE = 10 V 300 2 Collector-emitter voltage VCE (V) hFE  IC 350 0 Input voltage VIN (V) 40 ue 0 −25°C 25°C 0.01 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 20 0 Forward current transfer ratio hFE 40 Ta = 85°C VO = 0.2 V Ta = 25°C 10 1 0.1 1 10 Output current IO (mA) 100 (5°) ue ±0.05 0.20 −0.02 5 4 1 2 3 (0.5) (0.5) 1.00 ±0.05 ±0.05 ±0.05 1.60 ±0.05 ±0.05 +0.05 0.13 −0.02 di p Pl 0 to 0.05 lan nclu ea 1.20 ed de se 0.55 p 1.60 lan ma ma s fo htt visit i ed nt int llo p:/ fo e d /w llo is disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty (5°)ur mi UR ue ued pe pe Pro co L a d t ty du 0.20 n.p bo yp pe ct e life an ut d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at (0.27) i o / n. ce /D isc on tin an en int Ma M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). UP01213G SSMini5-F3 Unit: mm +0.05 SJJ00364AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
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