UP0121M00L

UP0121M00L

  • 厂商:

    NAIS(松下)

  • 封装:

    SOT665

  • 描述:

    UP0121M00L

  • 数据手册
  • 价格&库存
UP0121M00L 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP0121M Silicon NPN epitaxial planar type For switching circuits For digital circuits Unit: mm +0.05 0.20 –0.02 (0.30) (0.20) 5° 1 1.20±0.05 M Di ain sc te on na tin nc ue e/ d  Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)  SSMini type package, reduction of the mounting area and assembly cost 2 3 (0.50) (0.50) (0.20)  Features 0.10±0.02 4 1.60±0.05 5 1.00±0.05 1.60±0.05  Basic Part Number  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open) VCEO IC Total power dissipation PT Junction temperature Tj Storage temperature Tstg Unit 50 V 50 V 100 mA 125 mW 125 °C –55 to +125 °C 1: Base (Tr1) 2: Emitter 3: Base (Tr2) Internal Connection on tin isc  Electrical Characteristics Ta = 25°C±3°C ce /D Parameter Conditions (C1) 5 (C2) 4 Tr1 Tr2 R2 R2 47 kΩ 47 kΩ R1 R1 2.2 kΩ 2.2 kΩ 1 2 3 (B1) (E) (B2) Min Typ Max Unit VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA VCE = 50 V, IB = 0 0.5 µA VEB = 6 V, IC = 0 0.2 mA Ma int en an Collector-base voltage (Emitter open) Symbol 4: Collector (Tr2) 5: Collector (Tr1) SSMini5-F2 Package Marking Symbol: EM ue Collector current Rating 0 to 0.02 5° 0.10 max 0.55±0.05 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Display at No.1 lead  UNR221M × 2 Collector-emitter cutoff current (Base open) ICEO Emitter-base cutoff current (Collector open) IEBO Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA Output voltage high-level VOH VCC = 5 V, VB = 0.5 V, RL = 1 kkΩ Ω Output voltage low-level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kkΩ Ω Input resistance R1 Resistance ratio R1 / R2 Transition frequency fT 80 0.25 4.9 −30% VCB = 10 V, IE = —2 mA, f = 200 MHz  V V 2.2 0.2 V +30% k kΩ 0.047  150 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: June 2005 SJJ00330AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). UP0121M UP0121M_VCE(sat)-IC UP0121M_IC-VCE UP0121M_PT-Ta IC  VCE VCE(sat)  IC Collector current IC (mA) 120 80 40 IB = 1.0 mA 200 0.9 mA 0.8 mA 0.7 mA 0.6 mA 100 0.5 mA 0.4 mA 10 IC /IB = 30 1 Ta = 85°C 10−1 M Di ain sc te on na tin nc ue e/ d Total power dissipation PT (mW) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) PT  Ta 0.3 mA 40 80 0 120 Ambient temperature Ta (°C) UP0121M_ hFE-IC Forward current transfer ratio hFE VCE = 10 V 200 Ta = 85°C 25°C 100 0 10−1 −25°C 1 10 102 103 en int Ma Input voltage VIN (V) an ce /D isc VIN  IO 1 10−1 10 1 102 10 102 103 UP0121M_IO-VIN 10 102 f = 1 MHz Ta = 25°C IO  VIN VO = 5 V Ta = 25°C 10 1 10−1 1 0 10 20 30 Collector-base voltage VCB (V) 103 Output current IO (mA) 2 10−2 UP0121M_Cob-VCB VO = 0.2 V Ta = 25°C 1 12 Collector current IC (mA) on tin UP0121M_VIN-IO 10−1 8 Collector-emitter voltage VCE (V) ue Collector current IC (mA) 10 4 Cob  VCB Collector output capacitance (Common base, input open circuited) Cob (pF) hFE  IC 0.2 mA 0 O 0 −25°C di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty n.p bo yp peOutput current I (mA)duct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 25°C SJJ00330AED 40 10−1 0 1 2 Input voltage VIN (V) Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
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