This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
UP03383
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
Unit: mm
+0.05
(0.30)
1
2
3
(0.50) (0.50)
1.00±0.05
(0.20)
5˚
di
p
Pl
lan nclu
ea
e
se
pla m d m des
ne ain ain foll
htt visit
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
o
/
n.
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
1.20±0.05
■ Features
1.60±0.05
4
M
Di ain
sc te
on na
tin nc
ue e/
d
5
0.10±0.02
0.20 –0.02
(0.20)
For digital circuits
1.60±0.05
■ Basic Part Number
5˚
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
VCBO
50
V
Collector-emitter voltage
(Base open)
VCEO
50
V
100
mA
Collector current
Tr2
Collector-base voltage
(Emitter open)
VCBO
−50
V
Collector-emitter voltage
(Base open)
VCEO
−50
V
Collector current
IC
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
Ma
int
en
an
ce
/D
isc
on
tin
Overall
IC
Publication date: December 2003
−100
mA
125
mW
125
°C
−55 to +125
°C
ue
Tr1
SJJ00255BED
1: Emitter (Tr1)
2: Base (Tr1)
3: Emitter (Tr2)
0 to 0.02
■ Absolute Maximum Ratings Ta = 25°C
0.10 max
0.55±0.05
Display at No.1 lead
• UNR2213 + UNR211F
4: Collector (Tr2)
5: Collector (Tr1)
Base (Tr2)
SSMini5-F2 Package
Marking Symbol: DV
Internal Connection
5
4
R1
Tr1
Tr2
R2
1
R1 R2
2
3
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP03383
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr1
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
Min
50
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.1
mA
hFE
VCE = 10 V, IC = 5 mA
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat)
VOH
Output voltage low-level
VOL
Unit
V
V
µA
80
IC = 10 mA, IB = 0.3 mA
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Max
0.25
4.9
V
V
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
di
p
Pl
lan nclu
ea
e
se
pla m d m des
ne ain ain foll
htt visit
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
o
/
n.
Output voltage high-level
Typ
0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
Conditions
0.2
V
Input resistance
R1
−30%
47
+30%
kΩ
Resistance ratio
R1 / R 2
0.8
1.0
1.2
Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
• Tr2
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−50
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
− 0.1
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −6 V, IC = 0
−1.0
mA
hFE
VCE = −10 V, IC = −5 mA
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat)
Conditions
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
VOL
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
ue
VOH
Output voltage low-level
ce
/D
isc
on
tin
R1 / R 2
Transition frequency
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
Max
Unit
V
V
µA
30
− 0.25
V
− 0.2
V
+30%
kΩ
−4.9
−30%
R1
Resistance ratio
Typ
IC = −10 mA, IB = − 0.3 mA
Output voltage high-level
Input resistance
Min
V
4.7
0.47
80
MHz
an
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
en
Common characteristics chart
int
PT Ta
Total power dissipation PT (mW)
Ma
150
125
100
75
50
25
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
SJJ00255BED
This product complies with the RoHS Directive (EU 2002/95/EC).
UP03383
Characteristics charts of Tr1
VCE(sat) IC
80
0.3 mA
hFE IC
320
IC / IB = 10
VCE = 10 V
1
Ta = 75°C
240
25°C
160
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector current IC (mA)
0.7 mA
0.6 mA
0.5 mA
0.4 mA
10
Forward current transfer ratio hFE
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
120
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
40
0.1 mA
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
25°C
0.01
0.1
1
10
30
40
1
0.1
int
en
an
Collector-base voltage VCB (V)
0
4
8
Input voltage VIN (V)
SJJ00255BED
10
100
1 000
VIN IO
100
10
ce
/D
isc
on
tin
20
1
Collector current IC (mA)
VO = 5 V
Ta = 25°C
ue
Output current IO (mA)
f = 1 MHz
Ta = 25°C
10
0
0.1
100
IO VIN
100
Ma
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
0
80
Collector current IC (mA)
10
1
−25°C
Input voltage VIN (V)
0
Ta = 75°C
0.1
−25°C
di
p
Pl
lan nclu
ea
e
se
pla m d m des
ne ain ain foll
htt visit
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
o
/
n.
0.2 mA
12
VO = 0.2 V
Ta = 25°C
10
1
0.1
0.1
1
10
100
Output current IO (mA)
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UP03383
Characteristics charts of Tr2
VCE(sat) IC
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
−80
− 0.5 mA
hFE IC
−200
IC / IB = 10
VCE = −10 V
Ta = 75°C
− 0.1
Ta = 75°C
−160
25°C
−120
−25°C
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector current IC (mA)
−120
−1
Forward current transfer ratio hFE
Ta = 25°C
IB = −1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
− 0.3 mA
−40
− 0.2 mA
− 0.1 mA
0
−2
−4
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
− 0.01
−1
Output current IO (mA)
−20
−30
Ma
int
en
an
Collector-base voltage VCB (V)
4
−100
0
−1
−1 000
−40
VO = −5 V
Ta = 25°C
−1
− 0.1
− 0.4
− 0.8
−1.2
Input voltage VIN (V)
SJJ00255BED
−10
−100
−1 000
Collector current IC (mA)
−10
ue
−10
−40
IO VIN
f = 1 MHz
Ta = 25°C
0
−10
−100
10
1
−80
Collector current IC (mA)
ce
/D
isc
on
tin
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
25°C
−1.6
VIN IO
−100
Input voltage VIN (V)
0
−25°C
di
p
Pl
lan nclu
ea
e
se
pla m d m des
ne ain ain foll
htt visit
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
o
/
n.
− 0.4 mA
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
−1
−10
Output current IO (mA)
−100
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
M
Di ain
sc te
on na
tin nc
ue e/
d
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
d
pla inc
ne lud
se
pla m d m es
v
ne ain ain foll
htt isit
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
o
/
n.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
ea
Ma
int
en
an
ce
/D
isc
on
tin
ue
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
