This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
UP03390G
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For digital circuits
Package
Two elements incorporated into one package (Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
Code
SSMini5-F3
Pin Name
1: Emitter (Tr1)
2: Base (Tr1)
3: Emitter (Tr2)
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Features
Basic Part Number
Absolute Maximum Ratings Ta = 25°C
Parameter
Tr1
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
IC
100
mA
Collector-base voltage (Emitter open)
VCBO
–50
V
Collector-emitter voltage (Base open)
VCEO
–50
V
IC
–100
mA
PT
125
mW
Tj
125
°C
Tstg
–55 to +125
°C
Collector current
Tr2
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Marking Symbol: EX
Internal Connection
(C1,B2)
5
(C2)
4
R1
10 kΩ
Tr1
R2
47 kΩ
Tr2
R2
47 kΩ
R1
47 kΩ
1
(E1)
2
(B1)
3
(E2)
on
tin
ue
Electrical Characteristics Ta = 25°C±3°C
4: Collector (Tr2)
5: Collector (Tr1)
Base (Tr2)
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UNR1114 + UNR1213
Tr1
Symbol
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Parameter
Conditions
Min
Typ
Max
Unit
VCBO
IC = 10 µA, IE = 0
50
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.1
mA
Forward current transfer ratio
hFE
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Collector-base voltage (Emitter open)
Collector-emitter saturation voltage
VCE(sat)
VCE = 10 V, IC = 5 mA
80
IC = 10 mA, IB = 0.3 mA
0.25
Output voltage high-level
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
Input resistance
R1
–30%
Resistance ratio
R1 / R2
0.8
Transition frequency
fT
VCB = 10 V, IE = –2 mA, f = 200 MHz
4.9
V
V
0.2
V
47
+30%
kΩ
1.0
1.2
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2007
SJJ00371AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP03390G
Electrical Characteristics (Continued) Ta = 25°C±3°C
Tr2
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 µA, IE = 0
–50
V
Collector-emitter voltage (Base open)
VCEO
IC = –2 mA, IB = 0
–50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –50 V, IE = 0
– 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = –50 V, IB = 0
– 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = –6 V, IC = 0
– 0.2
mA
Forward current transfer ratio
hFE
VCE = –10 V, IC = –5 mA
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80
Collector-emitter saturation voltage
VCE(sat)
IC = –10 mA, IB = – 0.3 mA
VOH
VCC = –5 V, VB = – 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = –5 V, VB = –2.5 V, RL = 1 kΩ
Input resistance
R1
Resistance ratio
R1 / R2
fT
– 0.25
–4.9
VCB = –10 V, IE = 1 mA, f = 200 MHz
ue
on
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– 0.2
V
–30%
10
+30%
kΩ
0.17
0.21
0.25
80
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
SJJ00371AED
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Output voltage high-level
Transition frequency
MHz
This product complies with the RoHS Directive (EU 2002/95/EC).
UP03390G
Common characteristics chart
PT Ta
120
100
80
60
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Total power dissipation PT (mW)
140
40
40
80
120
Ambient temperature Ta (°C)
Characteristics charts of Tr1
IC VCE
140
IB = 1.0 mA
Ta = 25°C
0.9 mA
0.8 mA
0.7 mA
120
Collector current IC (mA)
VCE(sat) IC
0.6 mA
0.5 mA
100
102
25°C
−25°C
150
Ta = 85°C
100
0
2
4
6
8
10
25°C
10−2
0.1 mA
20
10−3
0.1
12
1
isc
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2
f = 1 MHz
Ta = 25°C
10
0
100
IO VIN
102
100
VIN IO
10
VO = 5 V
Ta = 25°C
VO = 0.2 V
Ta = 25°C
IN
104
O
1
10
Collector current IC (mA)
5
10
1.5
1
Collector current IC (mA)
ce
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Cob VCB
2.5
−25°C
50
Collector-emitter voltage VCE (V)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Ta = 85°C
200
10−1
0.2 mA
40
0
1
0.3 mA
60
300
VCE = 10 V
250
0.4 mA
80
IC / IB = 10
10
hFE IC
350
FE
0
CE(sat)
0
on
tinCollector-emitter saturation voltage V (V)
Output current I (mA)
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Forward
current
transfer
ratio
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Input voltage V (V)
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20
1
103
0.5
0
0
10
20
30
Collector-base voltage VCB (V)
40
10−2
0
0.5
1.0
1.5
Input voltage VIN (V)
SJJ00371AED
2.0
102
10−3
10−2
10−1
Output current IO (mA)
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UP03390G
Characteristics charts of Tr2
VCE(sat) IC
Collector current IC (mA)
−120
−100
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
− 0.4 mA
−80
− 0.3 mA
−60
hFE IC
300
IC / IB = 10
VCE = −10 V
Ta = 85°C
−1
− 0.1
Ta = 85°C
25°C
200
−25°C
100
M
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− 0.2 mA
−10
Forward current transfer ratio hFE
IB = −1.0 mA
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
−140
− 0.1 mA
−20
−2
0
−4
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
Output current IO (mA)
−10
−20
−30
−40
Ma
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isc
Collector-base voltage VCB (V)
4
VO = −5 V
Ta = 25°C
−100
−1
−10
−100
−1 000
Collector current IC (mA)
VIN IO
VO = − 0.2 V
Ta = 25°C
−10
−10
−1
−1
ue
0
0
− 0.1
−100
IO VIN
−100
10
1
−10
−1
Collector current IC (mA)
− 0.1
− 0.5
on
tin
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
− 0.01
− 0.1
IN
0
−25°C
25°C
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−40
−1.0
−1.5
Input voltage VIN (V)
SJJ00371AED
−2.0
− 0.1
−1
−10
Output current IO (mA)
−100
an
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(5°)
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on
tin
isc
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/D
1
+0.05
2
3
(0.5)
(0.5)
1.00 ±0.05
±0.05
±0.05
±0.05
5
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1.60
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0.20 −0.02
+0.05
0.20 ±0.05
This product complies with the RoHS Directive (EU 2002/95/EC).
UP03390G
SSMini5-F3
Unit: mm
4
0.13 −0.02
SJJ00371AED
5
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
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isc
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
