This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
UP0421x Series
Silicon NPN epitaxial planar type
Unit : mm
0.20+0.05
–0.02
(0.30)
4
M
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d
■ Features
1
2
3
(0.50)(0.50)
1.00±0.05
1.60±0.05
5˚
(0.20)
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
(0.20)
5
1.20±0.05
6
1.60±0.05
For switching/digital circuits
0.10±0.02
(R2)
10 kΩ
47 kΩ
47 kΩ
5˚
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
VCEO
50
V
100
mA
125
mW
125
°C
−55 to +125
°C
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
R1
4
R2
Tr1
Tr2
R2
1
R1
2
3
Ma
int
en
an
ce
/D
isc
on
tin
ue
IC
5
6
Parameter
Collector current
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F1 Package
Internal Connection
■ Absolute Maximum Ratings Ta = 25°C
Collector-emitter voltage (Base open)
0.10 max.
(R1)
47 kΩ
10 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
0.55±0.05
Marking Symbol
8Z
9V
8S
BR
8T
8U
0 to 0.02
• UP04210
• UP04211
• UP04213
• UP04214
• UP04215
• UP04216
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Display at No.1 lead
■ Resistance by Part Number
Publication date: December 2003
SJJ00002BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP0421x Series
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
50
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
ICEO
VCE = 50 V, IB = 0
0.5
µA
IEBO
VEB = 6 V, IC = 0
0.01
mA
Collector-emitter cutoff current (Base open)
UP04210/4215/4216
Min
Typ
Max
V
cutoff current UP04211
0.5
(Collector open) UP04213
0.1
UP04214
UP04213/4214
hFE
VCE = 10 V, IC = 5 mA
µA
0.2
160
460
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Forward current UP04210/4215/4216
transfer ratio UP04211
Unit
V
0.1
M
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tin nc
ue e/
d
Emitter-base
Conditions
35
80
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 0.3 mA
Output voltage high-level
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
0.25
4.9
V
V
0.2
V
+30%
kΩ
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
UP04213
Input
resistance
UP04210/4213
Resistance
ratio
UP04211/4213
−30%
R1
UP04211/4214/4215
UP04216
R1 / R 2
UP04214
Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
47
10
4.7
0.8
1.0
1.2
0.17
0.21
0.25
150
MHz
ce
/D
isc
on
tin
ue
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
en
an
PT Ta
Ma
Total power dissipation PT (mW)
int
150
125
100
75
50
25
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
SJJ00002BED
This product complies with the RoHS Directive (EU 2002/95/EC).
UP0421x Series
Characteristics charts of UP04210
80
hFE IC
300
IC / IB = 10
1
VCE = 10 V
Ta = 75°C
25°C
200
M
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d
0.3 mA
10
Forward current transfer ratio hFE
Ta = 25°C
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
IB = 1.0 mA
Collector current IC (mA)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
120
40
0.1 mA
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
IO VIN
0.01
0.1
en
an
IC VCE
int
Ma
Collector current IC (mA)
Ta = 25°C
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
Collector-emitter saturation voltage VCE(sat) (V)
Characteristics charts of UP04211
IB = 1.0 mA
0
0.1
100
1
10
1 000
100
Collector current IC (mA)
VO = 0.2 V
Ta = 25°C
10
1
0.1
2
Input voltage VIN (V)
120
10
VIN IO
Input voltage VIN (V)
1
100
Collector current IC (mA)
1
ce
/D
isc
on
tin
0
1
100
VO = 5 V
Ta = 25°C
1
0.1
−25˚C
ue
Output current IO (mA)
10
25°C
10
100
Output current IO (mA)
VCE(sat) IC
1
hFE IC
IC / IB = 10
Ta = 75°C
0.1
25°C
−25˚C
0.01
1
10
VCE = 10 V
Forward current transfer ratio hFE
0
Ta = 75°C
0.1
−25°C
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0.2 mA
100
Collector current IC (mA)
SJJ00002BED
1 000
200
Ta = 75°C
25°C
−25°C
100
0
1
10
100
1 000
Collector current IC (mA)
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UP0421x Series
IO VIN
VIN IO
100
1
10
VO = 5 V
Ta = 25°C
10
Input voltage VIN (V)
Output current IO (mA)
f = 1 MHz
Ta = 25°C
1
VO = 0.2 V
Ta = 25°C
1
M
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Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
10
20
0.01
1.0
30
Collector-base voltage VCB (V)
IC VCE
80
0.3 mA
0.2 mA
40
6
8
10
12
an
int
en
f = 1 MHz
Ta = 25°C
10
20
Output current IO (mA)
30
Collector-base voltage VCB (V)
4
40
hFE IC
Ta = 75°C
240
25°C
160
−25°C
80
25°C
1
10
0
0.1
100
IO VIN
10
1
8
Input voltage VIN (V)
SJJ00002BED
10
100
1 000
VIN IO
100
VO = 5 V
Ta = 25°C
4
1
Collector current IC (mA)
Collector current IC (mA)
0
100
VCE = 10 V
−25°C
0.01
0.1
10
320
Ta = 75°C
0.1
0.1
0
1
Output current IO (mA)
1
100
Ma
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
10
0.1
0.1
2.0
IC / IB = 10
ce
/D
isc
on
tin
4
Collector-emitter voltage VCE (V)
1
10
ue
0.1 mA
2
1.8
Input voltage VIN (V)
Collector current IC (mA)
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0
1.6
VCE(sat) IC
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0
1.4
Input voltage VIN (V)
Characteristics charts of UP04213
120
1.2
Forward current transfer ratio hFE
10
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0
Collector-emitter saturation voltage VCE(sat) (V)
0.1
0.1
12
VO = 0.2 V
Ta = 25°C
10
1
0.1
0.1
1
10
Output current IO (mA)
100
This product complies with the RoHS Directive (EU 2002/95/EC).
UP0421x Series
Characteristics charts of UP04214
VCE(sat) IC
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
hFE IC
300
IC / IB = 10
Ta = 75°C
0.1
VCE = 10 V
Ta = 75°C
25°C
200
M
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tin nc
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d
Collector current IC (mA)
120 IB = 1.0 mA
1
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
0.1 mA
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
Output current IO (mA)
int
Ma
Collector current IC (mA)
en
an
IC VCE
Ta = 25°C
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
80
0.2 mA
40
0.1 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
Collector-emitter saturation voltage VCE(sat) (V)
Characteristics charts of UP04215
IB = 1.0 mA
0
0.1
1 000
1
10
100
1 000
Collector current IC (mA)
Collector current IC (mA)
VIN IO
10
VO = 5 V
Ta = 25°C
10
1
VO = 0.2 V
Ta = 25°C
1
0.1
0.01
20
Collector-base voltage VCB (V)
120
100
ue
10
10
100
f = 1 MHz
Ta = 25°C
0
100
IO VIN
10
1
1
0
ce
/D
isc
on
tin
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
0.01
Input voltage VIN (V)
0
1
0.1
0.1
2
100
VCE(sat) IC
hFE IC
IC / IB = 10
Ta = 75°C
0.1
25°C
−25˚C
10
100
Collector current IC (mA)
SJJ00002BED
1 000
VCE = 10 V
Ta = 75°C
400
1
10
Output current IO (mA)
1
0.01
1
Input voltage VIN (V)
Forward current transfer ratio hFE
0
−25˚C
−25°C
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0.2 mA
40
25°C
25°C
300
−25°C
200
100
0
1
10
100
1 000
Collector current IC (mA)
5
This product complies with the RoHS Directive (EU 2002/95/EC).
UP0421x Series
IO VIN
100
Input voltage VIN (V)
Output current IO (mA)
f = 1 MHz
Ta = 25°C
VIN IO
10
VO = 5 V
Ta = 25°C
10
VO = 0.2 V
Ta = 25°C
1
1
30
Collector-base voltage VCB (V)
Characteristics charts of UP04216
IC VCE
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
Collector current IC (mA)
120
0.4 mA
80
0.3 mA
0.2 mA
40
0.1 mA
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
an
en
int
f = 1 MHz
Ta = 25°C
1
0.1
0
10
20
30
Collector-base voltage VCB (V)
6
2
VCE(sat) IC
hFE IC
IC / IB = 10
Ta = 75°C
25°C
−25˚C
1
10
25°C
−25°C
200
100
0
0.1
100
1
10
VO = 5 V
Ta = 25°C
1
0.8
1.2
Input voltage VIN (V)
SJJ00002BED
10
100
1 000
Collector current IC (mA)
IO VIN
10
VCE = 10 V
Ta = 75°C
300
Collector current IC (mA)
0.1
0.4
100
Output current IO (mA)
0.1
0.01
0.1
10
1
Input voltage VIN (V)
100
Output current IO (mA)
Ma
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
10
1
1
ce
/D
isc
on
tin
0
0.1
0
Forward current transfer ratio hFE
20
Input voltage VIN (V)
10
Collector-emitter saturation voltage VCE(sat) (V)
0
ue
1
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M
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Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
10
VIN IO
VO = 0.2 V
Ta = 25°C
1
0.1
0.1
1
10
Output current IO (mA)
100
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
M
Di ain
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ue e/
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
d
pla inc
ne lud
se
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
ea
Ma
int
en
an
ce
/D
isc
on
tin
ue
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.