UP0421500L

UP0421500L

  • 厂商:

    NAIS(松下)

  • 封装:

    SOT-563

  • 描述:

    UP0421500L

  • 数据手册
  • 价格&库存
UP0421500L 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP0421x Series Silicon NPN epitaxial planar type Unit : mm 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d ■ Features 1 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 5˚ (0.20) • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half (0.20) 5 1.20±0.05 6 1.60±0.05 For switching/digital circuits 0.10±0.02 (R2)  10 kΩ 47 kΩ 47 kΩ   5˚ 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V VCEO 50 V 100 mA 125 mW 125 °C −55 to +125 °C Total power dissipation PT Junction temperature Tj Storage temperature Tstg R1 4 R2 Tr1 Tr2 R2 1 R1 2 3 Ma int en an ce /D isc on tin ue IC 5 6 Parameter Collector current 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) SSMini6-F1 Package Internal Connection ■ Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage (Base open) 0.10 max. (R1) 47 kΩ 10 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 0.55±0.05 Marking Symbol 8Z 9V 8S BR 8T 8U 0 to 0.02 • UP04210 • UP04211 • UP04213 • UP04214 • UP04215 • UP04216 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Display at No.1 lead ■ Resistance by Part Number Publication date: December 2003 SJJ00002BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). UP0421x Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 ICEO VCE = 50 V, IB = 0 0.5 µA IEBO VEB = 6 V, IC = 0 0.01 mA Collector-emitter cutoff current (Base open) UP04210/4215/4216 Min Typ Max V cutoff current UP04211 0.5 (Collector open) UP04213 0.1 UP04214 UP04213/4214 hFE VCE = 10 V, IC = 5 mA µA 0.2 160 460  di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Forward current UP04210/4215/4216 transfer ratio UP04211 Unit V 0.1 M Di ain sc te on na tin nc ue e/ d Emitter-base Conditions 35 80 Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.3 mA Output voltage high-level VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ Output voltage low-level VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ 0.25 4.9 V V 0.2 V +30% kΩ  VCC = 5 V, VB = 3.5 V, RL = 1 kΩ UP04213 Input resistance UP04210/4213 Resistance ratio UP04211/4213 −30% R1 UP04211/4214/4215 UP04216 R1 / R 2 UP04214 Transition frequency fT VCB = 10 V, IE = −2 mA, f = 200 MHz 47 10 4.7 0.8 1.0 1.2 0.17 0.21 0.25 150 MHz ce /D isc on tin ue Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart en an PT  Ta Ma Total power dissipation PT (mW) int 150 125 100 75 50 25 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00002BED This product complies with the RoHS Directive (EU 2002/95/EC). UP0421x Series Characteristics charts of UP04210 80 hFE  IC 300 IC / IB = 10 1 VCE = 10 V Ta = 75°C 25°C 200 M Di ain sc te on na tin nc ue e/ d 0.3 mA 10 Forward current transfer ratio hFE Ta = 25°C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA IB = 1.0 mA Collector current IC (mA) VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) IC  VCE 120 40 0.1 mA 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) IO  VIN 0.01 0.1 en an IC  VCE int Ma Collector current IC (mA) Ta = 25°C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) Characteristics charts of UP04211 IB = 1.0 mA 0 0.1 100 1 10 1 000 100 Collector current IC (mA) VO = 0.2 V Ta = 25°C 10 1 0.1 2 Input voltage VIN (V) 120 10 VIN  IO Input voltage VIN (V) 1 100 Collector current IC (mA) 1 ce /D isc on tin 0 1 100 VO = 5 V Ta = 25°C 1 0.1 −25˚C ue Output current IO (mA) 10 25°C 10 100 Output current IO (mA) VCE(sat)  IC 1 hFE  IC IC / IB = 10 Ta = 75°C 0.1 25°C −25˚C 0.01 1 10 VCE = 10 V Forward current transfer ratio hFE 0 Ta = 75°C 0.1 −25°C di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0.2 mA 100 Collector current IC (mA) SJJ00002BED 1 000 200 Ta = 75°C 25°C −25°C 100 0 1 10 100 1 000 Collector current IC (mA) 3 This product complies with the RoHS Directive (EU 2002/95/EC). UP0421x Series IO  VIN VIN  IO 100 1 10 VO = 5 V Ta = 25°C 10 Input voltage VIN (V) Output current IO (mA) f = 1 MHz Ta = 25°C 1 VO = 0.2 V Ta = 25°C 1 M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 10 20 0.01 1.0 30 Collector-base voltage VCB (V) IC  VCE 80 0.3 mA 0.2 mA 40 6 8 10 12 an int en f = 1 MHz Ta = 25°C 10 20 Output current IO (mA) 30 Collector-base voltage VCB (V) 4 40 hFE  IC Ta = 75°C 240 25°C 160 −25°C 80 25°C 1 10 0 0.1 100 IO  VIN 10 1 8 Input voltage VIN (V) SJJ00002BED 10 100 1 000 VIN  IO 100 VO = 5 V Ta = 25°C 4 1 Collector current IC (mA) Collector current IC (mA) 0 100 VCE = 10 V −25°C 0.01 0.1 10 320 Ta = 75°C 0.1 0.1 0 1 Output current IO (mA) 1 100 Ma Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 10 0.1 0.1 2.0 IC / IB = 10 ce /D isc on tin 4 Collector-emitter voltage VCE (V) 1 10 ue 0.1 mA 2 1.8 Input voltage VIN (V) Collector current IC (mA) Ta = 25°C IB = 1.0 mA 0.9 mA 0.8 mA 0 1.6 VCE(sat)  IC 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0 1.4 Input voltage VIN (V) Characteristics charts of UP04213 120 1.2 Forward current transfer ratio hFE 10 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 Collector-emitter saturation voltage VCE(sat) (V) 0.1 0.1 12 VO = 0.2 V Ta = 25°C 10 1 0.1 0.1 1 10 Output current IO (mA) 100 This product complies with the RoHS Directive (EU 2002/95/EC). UP0421x Series Characteristics charts of UP04214 VCE(sat)  IC 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 80 0.3 mA hFE  IC 300 IC / IB = 10 Ta = 75°C 0.1 VCE = 10 V Ta = 75°C 25°C 200 M Di ain sc te on na tin nc ue e/ d Collector current IC (mA) 120 IB = 1.0 mA 1 Forward current transfer ratio hFE Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC  VCE 0.1 mA 2 4 6 8 10 12 Collector-emitter voltage VCE (V) Output current IO (mA) int Ma Collector current IC (mA) en an IC  VCE Ta = 25°C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 80 0.2 mA 40 0.1 mA 0 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE(sat) (V) Characteristics charts of UP04215 IB = 1.0 mA 0 0.1 1 000 1 10 100 1 000 Collector current IC (mA) Collector current IC (mA) VIN  IO 10 VO = 5 V Ta = 25°C 10 1 VO = 0.2 V Ta = 25°C 1 0.1 0.01 20 Collector-base voltage VCB (V) 120 100 ue 10 10 100 f = 1 MHz Ta = 25°C 0 100 IO  VIN 10 1 1 0 ce /D isc on tin Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 0.01 Input voltage VIN (V) 0 1 0.1 0.1 2 100 VCE(sat)  IC hFE  IC IC / IB = 10 Ta = 75°C 0.1 25°C −25˚C 10 100 Collector current IC (mA) SJJ00002BED 1 000 VCE = 10 V Ta = 75°C 400 1 10 Output current IO (mA) 1 0.01 1 Input voltage VIN (V) Forward current transfer ratio hFE 0 −25˚C −25°C di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0.2 mA 40 25°C 25°C 300 −25°C 200 100 0 1 10 100 1 000 Collector current IC (mA) 5 This product complies with the RoHS Directive (EU 2002/95/EC). UP0421x Series IO  VIN 100 Input voltage VIN (V) Output current IO (mA) f = 1 MHz Ta = 25°C VIN  IO 10 VO = 5 V Ta = 25°C 10 VO = 0.2 V Ta = 25°C 1 1 30 Collector-base voltage VCB (V) Characteristics charts of UP04216 IC  VCE Ta = 25°C IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA Collector current IC (mA) 120 0.4 mA 80 0.3 mA 0.2 mA 40 0.1 mA 0 2 4 6 8 10 12 Collector-emitter voltage VCE (V) an en int f = 1 MHz Ta = 25°C 1 0.1 0 10 20 30 Collector-base voltage VCB (V) 6 2 VCE(sat)  IC hFE  IC IC / IB = 10 Ta = 75°C 25°C −25˚C 1 10 25°C −25°C 200 100 0 0.1 100 1 10 VO = 5 V Ta = 25°C 1 0.8 1.2 Input voltage VIN (V) SJJ00002BED 10 100 1 000 Collector current IC (mA) IO  VIN 10 VCE = 10 V Ta = 75°C 300 Collector current IC (mA) 0.1 0.4 100 Output current IO (mA) 0.1 0.01 0.1 10 1 Input voltage VIN (V) 100 Output current IO (mA) Ma Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 10 1 1 ce /D isc on tin 0 0.1 0 Forward current transfer ratio hFE 20 Input voltage VIN (V) 10 Collector-emitter saturation voltage VCE(sat) (V) 0 ue 1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. M Di ain sc te on na tin nc ue e/ d Collector output capacitance C (pF) (Common base, input open circuited) ob Cob  VCB 10 VIN  IO VO = 0.2 V Ta = 25°C 1 0.1 0.1 1 10 Output current IO (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
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