UP04215G0L

UP04215G0L

  • 厂商:

    NAIS(松下)

  • 封装:

    SOT-563

  • 描述:

    UP04215G0L

  • 数据手册
  • 价格&库存
UP04215G0L 数据手册
This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP04215G Silicon NPN epitaxial planar type For switching/digital circuits  Package  Two elements incorporated into one package (Transistors with built-in resistor)  Reduction of the mounting area and assembly cost by one half  Code SSMini6-F2  Pin Name 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) M Di ain sc te on na tin nc ue e/ d  Features  Basic Part Number  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n.  UNR2210 × 2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V IC 100 mA PT 125 mW Tj 125 °C Tstg –55 to +125 °C Collector current Total power dissipation Junction temperature Storage temperature  Electrical Characteristics Ta = 25°C±3°C Parameter 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) Symbol  Marking Symbol: 8T  Internal Connection Conditions Min (C1) (B2) (E2) 6 5 4 R1 10 kΩ Tr1 R1 10 kΩ Tr2 1 2 3 (E1) (B1) (C2) Typ Max Unit VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO Collector-emitter cutoff current (Base open) ICEO isc on tin ue Collector-base voltage (Emitter open) IEBO Forward current transfer ratio hFE an ce /D Emitter-base cutoff current (Collector open) Ma int Output voltage high-level en Collector-emitter saturation voltage VCE(sat) VOH Output voltage low-level VOL Input resistance R1 Transition frequency fT VCB = 50 V, IE = 0 0.1 µA VCE = 50 V, IB = 0 0.5 µA VEB = 6 V, IC = 0 0.01 mA 460  0.25 V VCE = 10 V, IC = 5 mA 160 IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ 4.9 VCC = 5 V, VB = 2.5 V, RL = 1 kΩ –30% VCB = 10 V, IE = –2 mA, f = 200 MHz 10 150 V 0.2 V +30% kΩ MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: November 2007 SJJ00410AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). UP04215G IC  VCE VCE(sat)  IC Ta = 25°C 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA Collector current IC (mA) 125 100 75 50 0.3 mA 80 0.2 mA 40 0.1 mA 1 IC / IB = 10 Ta = 75°C 0.1 25°C M Di ain sc te on na tin nc ue e/ d Total power dissipation PT (mW) IB = 1.0 mA 120 Collector-emitter saturation voltage VCE(sat) (V) PT  Ta 150 25 80 120 Ambient temperature Ta (°C) hFE  IC Forward current transfer ratio hFE 25°C 300 −25°C 200 100 0 1 10 100 1 000 en int Ma Input voltage VIN (V) an ce /D VO = 0.2 V Ta = 25°C 1 1 4 6 10 10 12 0.01 1 10 10 100 1 000 Collector current IC (mA) IO  VIN VO = 5 V Ta = 25°C f = 1 MHz Ta = 25°C 10 1 1 0 10 20 30 Collector-base voltage VCB (V) 100 Output current IO (mA) 2 8 100 on tin isc VIN  IO 0.1 2 Collector-emitter voltage VCE (V) ue Collector current IC (mA) 10 0 Cob  VCB VCE = 10 V Ta = 75°C 400 0 160 O 40 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty n.p bo yp peOutput current I (mA)duct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 −25°C SJJ00410AED 0 1 2 Input voltage VIN (V) an en ue on tin isc ce /D ±0.05 6 5 4 1 2 3 (0.5) (0.5) 1.00 ±0.05 (5°) 0.13 −0.02 ±0.05 ±0.05 di p Pl lan nclu 0 to 0.05 ea 1.20 ed de se 0.55 pla m m s 1.60 v ne ain ain foll i htt sit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro (5°) co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / (0.27) n . int Ma M Di ain sc te on na tin nc ue e/ d 1.60 ±0.05 +0.05 0.20 −0.02 0.20 ±0.05 This product complies with the RoHS Directive (EU 2002/95/EC). UP04215G SSMini6-F2 Unit: mm +0.05 SJJ00410AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
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