This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
UP04313
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
4
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■ Features
■ Basic Part Number
Rating
Unit
VCBO
50
V
Collector-emitter voltage
(Base open)
VCEO
50
V
100
mA
VCBO
−50
V
Collector-emitter voltage
(Base open)
VCEO
−50
V
Collector current
IC
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
−100
mA
125
mW
125
°C
−55 to +125
°C
ue
Overall
Collector-base voltage
(Emitter open)
ce
/D
isc
on
tin
Tr2
IC
(0.20)
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
0.55±0.05
0.10 max.
Symbol
Collector-base voltage
(Emitter open)
Collector current
5˚
0 to 0.02
5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
2
3
(0.50)(0.50)
1.00±0.05
1.60±0.05
Display at No.1 lead
• UNR2213 + UNR2113
Tr1
1
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• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
0.10±0.02
(0.20)
5
1.20±0.05
6
Unit: mm
0.20+0.05
–0.02
(0.30)
1.60±0.05
For switching/digital circuits
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F1 Package
Marking Symbol: BZ
Internal Connection
6
5
4
Tr1
1
Tr2
2
3
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr1
an
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VCBO
IC = 10 µA, IE = 0
50
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.1
mA
Forward current transfer ratio
hFE
VCE = 10 V, IC = 5 mA
Ma
int
en
Collector-base voltage (Emitter open)
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 0.3 mA
Output voltage high-level
VOH
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = 5 V, VB = 3.5 V, RL = 1 kΩ
Input resistance
R1
Resistance ratio
R1/R2
Transition frequency
fT
80
0.25
4.9
−30%
0.8
VCB = 10 V, IE = −2 mA, f = 200 MHz
V
V
0.2
V
47
+30%
kΩ
1.0
1.2
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2003
SJJ00248BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP04313
■ Electrical Characteristics (continued) Ta = 25°C ± 3°C
• Tr2
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
Conditions
Min
−50
Typ
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −6 V, IC = 0
− 0.1
mA
hFE
VCE = −10 V, IC = −5 mA
Collector-emitter saturation voltage
V
− 0.1
VOH
Output voltage low-level
VOL
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
− 0.25
V
− 0.2
V
−4.9
V
VCC = −5 V, VB = −3.5 V, RL = 1 kΩ
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Output voltage high-level
µA
80
IC = −10 mA, IB = − 0.3 mA
VCE(sat)
Unit
V
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Forward current transfer ratio
Max
Input resistance
R1
−30%
47
+30%
kΩ
Resistance ratio
R1/R2
0.8
1.0
1.2
Transition frequency
VCB = −10 V, IE = 1 mA, f = 200 MHz
fT
80
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
120
100
80
60
ue
40
0
20
40
60
80
100 120 140
an
Ambient temperature Ta (°C)
en
Characteristics charts of Tr1
Ma
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
120
Collector current IC (mA)
VCE(sat) IC
int
IC VCE
140
0.7 mA
0.6 mA
0.5 mA
0.4 mA
100
80
0.3 mA
60
0.2 mA
40
0.1 mA
20
0
0
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
2
10
hFE IC
IC / IB = 10
320
VCE = 10 V
280
Forward current transfer ratio hFE
0
Collector-emitter saturation voltage VCE(sat) (V)
20
ce
/D
isc
on
tin
Total power dissipation PT (mW)
140
1
0.1
Ta = 75°C
−25°C
Ta = 75°C
240
25°C
200
160
−25°C
120
80
40
25°C
0.01
0.1
1
10
Collector current IC (mA)
SJJ00248BED
100
0
0.1
1
10
100
Collector current IC (mA)
1 000
This product complies with the RoHS Directive (EU 2002/95/EC).
UP04313
IO VIN
VIN IO
100
Input voltage VIN (V)
f = 1 MHz
Ta = 25°C
Output current IO (mA)
100
VO = 5 V
Ta = 25°C
10
VO = 0.2 V
Ta = 25°C
10
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Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
10
30
40
Collector-base voltage VCB (V)
IC VCE
Ta = 25°C
− 0.7 mA
− 0.6 mA
−100
− 0.5 mA
−80
− 0.4 mA
−60
− 0.3 mA
−40
− 0.2 mA
−20
0
−2
−4
−6
−8
−10
−12
Cob VCB
f = 1 MHz
Ta = 25°C
Ma
int
en
an
10
IC
0
−5
−10 −15 −20 −25 −30 −35
Collector-base voltage VCB (V)
10
100
hFE IC
250
Ta = 75°C
− 0.1
1
Output current IO (mA)
−25°C
VCE = −10 V
Ta = 75°C
200
25°C
150
−25°C
100
50
25°C
− 0.01
−1
−10
Collector current IC (mA)
VO = − 5 V
Ta = 25°C
−1
−1.4
−1.8
Input voltage VIN (V)
SJJ00248BED
−10
−100
−1 000
Collector current IC (mA)
IO VIN
−10
− 0.01
−1.0
0
−1
−100
− 0.1
1
0.1
0.1
12
−1
ue
− 0.1 mA
Collector-emitter voltage VCE (V)
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
8
VCE(sat)
−10 V = −10 V
CE
ce
/D
isc
on
tin
0
4
−2.2
VIN IO
−100
Input voltage VIN (V)
Collector current IC (mA)
IB = −1.0 mA
− 0.9 mA
− 0.8 mA
−120
0
Input voltage VIN (V)
Characteristics charts of Tr2
−140
0.1
Forward current transfer ratio hFE
20
1
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10
Collector-emitter saturation voltage VCE(sat) (V)
0
Output current IO (mA)
1
1
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
− 0.1
−1
−10
−100
Output current IO (mA)
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
