This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
UP04314
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
0.20+0.05
–0.02
(0.30)
4
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■ Features
■ Basic Part Number
Rating
Unit
VCBO
50
V
Collector-emitter voltage
(Base open)
VCEO
50
V
100
mA
VCBO
−50
V
Collector-emitter voltage
(Base open)
VCEO
−50
V
Collector current
IC
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
Ma
int
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/D
isc
on
tin
Overall
Collector-base voltage
(Emitter open)
Publication date: December 2003
−100
mA
125
mW
125
°C
−55 to +125
°C
ue
Tr2
IC
SJJ00240BED
(0.20)
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
0.55±0.05
0.10 max.
Symbol
Collector-base voltage
(Emitter open)
Collector current
5˚
0 to 0.02
5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
2
3
(0.50)(0.50)
1.00±0.05
1.60±0.05
Display at No.1 lead
• UNR2214 + UNR2114
Tr1
1
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• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
(0.20)
5
1.20±0.05
6
Unit: mm
0.10±0.02
1.60±0.05
For switching/digital circuits
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F1 Package
Marking Symbol: CA
Internal Connection
6
5
4
Tr1
1
Tr2
2
3
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP04314
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr1
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
Min
50
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.2
mA
hFE
VCE = 10 V, IC = 5 mA
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat)
VOH
Output voltage low-level
VOL
Unit
V
V
µA
80
IC = 10 mA, IB = 0.3 mA
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Max
0.25
4.9
V
V
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
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Output voltage high-level
Typ
0.1
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Conditions
0.2
V
Input resistance
R1
−30%
10
+30%
kΩ
Resistance ratio
R1 / R 2
0.17
0.21
0.25
Transition frequency
fT
• Tr2
VCB = 10 V, IE = −2 mA, f = 200 MHz
Parameter
Symbol
VCBO
IC = −10 µA, IE = 0
−50
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
− 0.1
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −6 V, IC = 0
− 0.2
mA
hFE
VCE = −10 V, IC = −5 mA
Collector-emitter saturation voltage
VCE(sat)
VOH
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
Output voltage low-level
VOL
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
ce
/D
isc
on
tin
ue
R1
Resistance ratio
R1 / R 2
Transition frequency
fT
Typ
VCB = −10 V, IE = 1 mA, f = 200 MHz
Max
Unit
V
V
µA
80
IC = −10 mA, IB = − 0.3 mA
Output voltage high-level
Input resistance
Min
MHz
Collector-base voltage (Emitter open)
Forward current transfer ratio
Conditions
150
− 0.25
V
− 0.2
V
−4.9
V
−30%
10
+30%
kΩ
0.17
0.21
0.25
80
MHz
an
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
en
Common characteristics chart
int
PT Ta
Total power dissipation PT (mW)
Ma
150
125
100
75
50
25
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
SJJ00240BED
This product complies with the RoHS Directive (EU 2002/95/EC).
UP04314
Characteristics charts of Tr1
VCE(sat) IC
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
hFE IC
400
IC / IB = 10
VCE = 10 V
10
300
Ta = 75°C
M
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Collector current IC (mA)
IB = 1.0 mA
120
100
Forward current transfer ratio hFE
Ta = 25°C
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
160
0.3 mA
0.2 mA
0.1 mA
0
4
8
12
Collector-emitter voltage VCE (V)
4
3
2
1
10
an
Collector-base voltage VCB (V)
en
1
10
104
0
100
100
−25°C
1
100
1 000
10
VIN IO
100
VO = 5 V
Ta = 25°C
102
1
0.4
10
Collector current IC (mA)
103
ce
/D
isc
on
tin
1
int
0
0.1
0.01
0.1
Collector current IC (mA)
Output current IO (µA)
5
25°C
100
IO VIN
f = 1 MHz
IE = 0
Ta = 25°C
Ma
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
200
−25°C
ue
0
Ta = 75°C
25°C
0.1
Input voltage VIN (V)
40
1
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80
VO = 0.2 V
Ta = 25°C
10
1
0.1
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJJ00240BED
1.4
0.01
0.1
1
10
100
Output current IO (mA)
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UP04314
Characteristics charts of Tr2
IC VCE
VCE(sat) IC
Ta = 25°C
IB = −1.0 mA
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
−80
− 0.4 mA
hFE IC
400
IC / IB = 10
VCE = −10 V
−10
−1
300
Ta = 75°C
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Collector current IC (mA)
−120
Collector-emitter saturation voltage VCE(sat) (V)
−100
Forward current transfer ratio hFE
−160
− 0.2 mA
− 0.1 mA
−4
0
−8
Collector-emitter voltage VCE
−12
(V)
4
3
2
1
0
− 0.1
−1
−10
−100
Ma
int
en
an
Collector-base voltage VCB (V)
4
−10
−104
Output current IO (µA)
5
−1
0
−1
−100
VO = −5 V
Ta = 25°C
−103
−100
−1 000
VIN IO
−1 000
VO = − 0.2 V
Ta = 25°C
−100
−102
−10
−1
− 0.4
−10
Collector current IC (mA)
IO VIN
f = 1 MHz
IE = 0
Ta = 25°C
−25°C
100
Collector current IC (mA)
ce
/D
isc
on
tin
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
25°C
−25°C
− 0.01
− 0.1
ue
0
25°C
− 0.1
Input voltage VIN (V)
−40
Ta = 75°C
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− 0.3 mA
200
− 0.6
− 0.8
−1.0
−1.2
Input voltage VIN (V)
SJJ00240BED
−1.4
−10
−1
− 0.1
− 0.1
−1
−10
Output current IO (mA)
−100
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
M
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
ea
Ma
int
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ce
/D
isc
on
tin
ue
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
