This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
XP04311
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
M
Di ain
sc te
on na
tin nc
ue e/
d
For digital circuits
■ Package
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
• Code
SMini6-G1
• Pin Name
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
■ Basic Part Number
• UNR2211 + UNR2111
di
p
Pl
lan nclu
ea
e
se
pla m d m des
ne ain ain foll
htt visit
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
o
/
n.
■ Features
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Rating
Unit
Collector-base voltage
(Emitter open)
VCBO
50
V
Collector-emitter voltage
(Base open)
VCEO
50
V
100
mA
Collector current
Tr2
Collector-base voltage
(Emitter open)
VCBO
−50
V
Collector-emitter voltage
(Base open)
VCEO
−50
V
−100
mA
150
mW
150
°C
−55 to +150
°C
IC
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
an
en
int
Ma
Publication date: May 2009
■ Internal Connection
SJJ00176CED
5
4
Tr1
1
Collector current
ce
/D
isc
on
tin
Overall
■ Marking Symbol: 7X
6
IC
ue
Tr1
Symbol
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
Tr2
2
3
1
This product complies with the RoHS Directive (EU 2002/95/EC).
XP04311
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr1
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = 10 µA, IE = 0
Min
50
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.5
mA
hFE
VCE = 10 V, IC = 5 mA
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat)
VOH
Output voltage low-level
VOL
Unit
V
V
µA
35
IC = 10 mA, IB = 0.3 mA
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
Max
0.25
4.9
V
V
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
di
p
Pl
lan nclu
ea
e
se
pla m d m des
ne ain ain foll
htt visit
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
o
/
n.
Output voltage high-level
Typ
0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
Conditions
0.2
V
Input resistance
R1
−30%
10
+30%
kΩ
Resistance ratio
R1 / R 2
0.8
1.0
1.2
Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
• Tr2
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−50
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
− 0.5
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = −6 V, IC = 0
− 0.5
mA
hFE
VCE = −10 V, IC = −5 mA
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat)
Conditions
VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ
VOL
VCC = −5 V, VB = −2.5 V, RL = 1 kΩ
ue
VOH
Output voltage low-level
Transition frequency
Max
Unit
V
V
− 0.1
µA
35
− 0.25
V
− 0.2
V
−4.9
V
R1
−30%
10
+30%
kΩ
R1 / R 2
0.8
1.0
1.2
ce
/D
isc
on
tin
Resistance ratio
Typ
IC = −10 mA, IB = − 0.3 mA
Output voltage high-level
Input resistance
Min
fT
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
an
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
en
Common characteristics chart
int
PT Ta
Total power dissipation PT (mW)
Ma
250
200
150
100
50
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
SJJ00176CED
This product complies with the RoHS Directive (EU 2002/95/EC).
XP04311
Characteristics charts of Tr1
VCE(sat) IC
0.4 mA
0.3 mA
80
hFE IC
400
IC / IB = 10
VCE = 10 V
10
1
300
Ta = 75°C
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector current IC (mA)
0.7 mA
0.6 mA
0.5 mA
120
100
Forward current transfer ratio hFE
Ta = 25°C
IB = 1.0 mA
0.9 mA
0.8 mA
Collector-emitter saturation voltage VCE(sat) (V)
IC VCE
160
40
0.1 mA
2
4
6
8
10
12
Collector-emitter voltage VCE (V)
4
3
2
1
10
an
Collector-base voltage VCB (V)
en
1
10
104
0
100
1
100
100
1 000
VIN IO
100
VO = 5 V
Ta = 25°C
102
VO = 0.2 V
Ta = 25°C
10
1
0.1
10
1
0.4
10
Collector current IC (mA)
103
ce
/D
isc
on
tin
1
int
0
0.1
0.01
0.1
Collector current IC (mA)
Output current IO (µA)
5
25°C
−25°C
100
IO VIN
f = 1 MHz
IE = 0
Ta = 25°C
Ma
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
−25˚C
Input voltage VIN (V)
0
Ta = 75°C
0.1
ue
0
25°C
di
p
Pl
lan nclu
ea
e
se
pla m d m des
ne ain ain foll
htt visit
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
o
/
n.
0.2 mA
200
0.6
0.8
1.0
1.2
Input voltage VIN (V)
SJJ00176CED
1.4
0.01
0.1
1
10
100
Output current IO (mA)
3
This product complies with the RoHS Directive (EU 2002/95/EC).
XP04311
Characteristics charts of Tr2
IC VCE
VCE(sat) IC
− 0.9 mA
− 0.8 mA
− 0.7 mA
− 0.6 mA
− 0.5 mA
−80
IC / IB = 10
−10
−1
25°C
120
−25°C
80
− 0.3 mA
−40
− 0.2 mA
− 0.1 mA
−4
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
3
2
1
−1
−10
−100
Ma
int
en
an
Collector-base voltage VCB (V)
4
−1
−10
0
−1
−100
Collector current IC (mA)
–104
Output current IO (µA)
4
0
− 0.1
40
VO = −5 V
Ta = 25°C
−103
−102
−10
−1
− 0.4
− 0.6
− 0.8
−1.0
−1.2
Input voltage VIN (V)
SJJ00176CED
−10
−100
−1 000
Collector current IC (mA)
IO VIN
f = 1 MHz
IE = 0
Ta = 25°C
5
− 0.01
− 0.1
ce
/D
isc
on
tin
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Cob VCB
6
−25°C
−1.4
VIN IO
−100
Input voltage VIN (V)
−2
0
− 0.1
ue
0
Ta = 75°C
25°C
di
p
Pl
lan nclu
ea
e
se
pla m d m des
ne ain ain foll
htt visit
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
o
/
n.
− 0.4 mA
Ta = 75°C
VCE = −10 V
M
Di ain
sc te
on na
tin nc
ue e/
d
Collector current IC (mA)
−120
hFE IC
160
Forward current transfer ratio hFE
Ta = 25°C
IB = −1.0 mA
Collector-emitter saturation voltage VCE(sat) (V)
−100
−160
VO = − 0.2 V
Ta = 25°C
−10
−1
− 0.1
− 0.01
− 0.1
−1
−10
Output current IO (mA)
−100
10°
ue
±0.10
0.12 −0.02
6
5
1
2
(0.65)
(0.65)
2.0 ±0.1
1.3 ±0.1
4
3
+0.2
−0.1
±0.1
(0.425)
SMini6-G1
0.2 ±0.05
SJJ00176CED
±0.1
±0.1
di
p
Pl0.1
0 to
lan nclu
ea
1.25
ed de
se 0.9 p
l m m s
2.1
htt visit 0.9 ane ain ain follo
d te t
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe 5° Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
0.2
.
/en at
i
o
/
n.
ce
/D
isc
on
tin
an
en
int
Ma
M
Di ain
sc te
on na
tin nc
ue e/
d
This product complies with the RoHS Directive (EU 2002/95/EC).
XP04311
Unit: mm
+0.05
5
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
M
Di ain
sc te
on na
tin nc
ue e/
d
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
d
pla inc
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
d
/w llo is isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
/ on
.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
Pl
ea
Ma
int
en
an
ce
/D
isc
on
tin
ue
20080805
