BSS138K

Pb Free Product http://www.ncepower.com BSS138K NCE N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=4.5V RDS(ON) < 2Ω @ VGS=10V ESD Rating：HBM 2500V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Application ●Direct Logic-Level Interface: TTL/CMOS ●Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. ●Battery Operated Systems ●Solid-State Relays Marking and pin Assignment SOT-23 top view Package Marking And Ordering Information Device Marking 138K Device BSS138K Device Package SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 50 ±20 0.22 0.88 0.35 -55 To 150 Unit V V A A W ℃ 350 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=50V,VGS=0V Min 50 Typ Max Unit V 1 μA Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 Pb Free Product http://www.ncepower.com Gate-Body Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VSD IS VGS=0V,IS=0.22A td(on) tr td(off) tf Qg VDS=25V,ID=0.2A, VGS=10V VDD=30V,ID=0.22A VGS=10V,RGEN=6Ω Clss Coss Crss VDS=25V,VGS=0V, F=1.0MHz VGS(th) RDS(ON) gFS VDS=VGS,ID=250μA VGS=4.5V, ID=0.2A VGS=10V, ID=0.22A VDS=10V,ID=0.2A 0.2 0.6 IGSS VGS=±20V,VDS=0V BSS138K ±10 0.9 1.2 1.1 1.2 3 2 uA V Ω Ω S 30 15 6 5 5 60 35 2.4 PF PF PF nS nS nS nS nC 1.3 0.22 V A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 Pb Free Product http://www.ncepower.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Rl D G S Vout td(on) ton tr 90% BSS138K toff tf 90% td(off) Vin Vgs Rgen VOUT 10% INVERTED 10% 90% VIN 10% 50% 50% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms ID- Drain Current (A) Vds Drain-Source Voltage (V) ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 3 Output CHARACTERISTICS Figure 4 Transfer Characteristics Rdson On-Resistance(Ω) Rdson On-Resistance(Ω) ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 5 Drain-Source On-Resistance Figure 6 Rdson vs Vgs Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.0 Pb Free Product http://www.ncepower.com BSS138K Is- Reverse Drain Current (mA) Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Vds Source-Drain Voltage (V) Figure 7 Gate Charge Figure 8 Source-DrainDiode Forward Normalized On-Resistance TJ-Junction Temperature(℃) ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 9 Drain-Source On-Resistance Figure 10 Safe Operation Area C Capacitance (pF) Vds Drain-Source Voltage (V) Figure 11 Capacitance vs Vds Wuxi NCE Power Semiconductor Co., Ltd Page 4 v1.0 Pb Free Product http://www.ncepower.com BSS138K r(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 12 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 Pb Free Product http://www.ncepower.com BSS138K SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Symbol A A1 A2 b c D E E1 e e1 L L1 θ NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Wuxi NCE Power Semiconductor Co., Ltd Page 6 v1.0 Pb Free Product http://www.ncepower.com ATTENTION: ■ BSS138K ■ ■ ■ ■ ■ ■ ■ ■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications. NCE power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein. Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use. This catalog provides information as of Sep, 2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Semiconductor Co., Ltd Page 7 v1.0