NCE01P18K

厂商：
NCEPOWER(无锡新洁能)
封装：
TO252
描述：
MOS管 P-Channel VDS=100V VGS=±20V ID=18A RDS(ON)=120mΩ@4.5V TO252

数据手册：

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数据手册
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NCE01P18K 数据手册

Pb Free Product NCE01P18K http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-18A Schematic diagram RDS(ON)

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