NCE10TD60BD

PbFreeProduct NCE10TD60BD 600V, 10A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology Offering ⚫ Very low VCE(sat) ⚫ High speed switching ⚫ Positive temperature coefficient in VCE(sat) ⚫ Very tight parameter distribution ⚫ High ruggedness, temperature stable behavior Schematic diagram Application ⚫ Air Condition ⚫ Inverters ⚫ Motor drives Package Marking and Ordering Information Device Device Package Device Marking NCE10TD60BD TO-263 NCE10TD60BD TO-263 Absolute Maximum Ratings (TC=25°C unless otherwise noted) Parameter Symbol Value Units VCES Collector-Emitter Voltage 600 V VGES Gate- Emitter Voltage ±30 V Collector Current 20 A Collector Current @TC = 100 °C 10 A Pulsed Collector Current，tp limited by Tjmax 30 A - turn off safe operating area，VCE=600V，Tj=150°C 30 A IF Diode Continuous Forward Current @TC = 100 °C 10 A IFM Diode Maximum Forward Current 30 A Power Dissipation @ TC = 25°C 83 W Power Dissipation @TC = 100°C 41.5 W -55 to +175 °C 260 °C 5 us IC ICplus PD TJ,Tstg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering tsc Short circuit withstand time VGE=15 V, VCC≤400V, Allowed number of short circuits