NCE11N65

NCE11N65,NCE11N65F Pb-Free Product NCE N-Channel Enhancement Mode Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. VDS RDS(ON) ID 650 380 11 V mΩ A Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested Application ● ● ● Power factor correction（PFC） Switched mode power supplies(SMPS) Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device NCE11N65 NCE11N65F Device Package TO-220 TO-220F Marking NCE11N65 TO-220 Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V） VDS Gate-Source Voltage (VDS=0V) VGS Continuous Drain Current at Tc=25°C ID (DC) Continuous Drain Current at Tc=100°C ID (DC) (Note 1) IDM (pluse) Pulsed drain current Table 1. Drain Source voltage slope, VDS = 480 V, ID = 11 A, Tj = 125 °C Maximum Power Dissipation(Tc=25℃) Derate above 25°C (Note2) TO-220F Unit V V 11* 7* 33* A A A NCE11N65 NCE11N65F 650 ±30 11 7 33 50 125 1 340 11 33 0.26 dv/dt V/ns W W/°C PD EAS IAR Single pulse avalanche energy Avalanche current (Note 1) mJ A Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 NCE11N65,NCE11N65F Pb-Free Product Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) EAR 0.6 -55...+150 mJ °C Operating Junction and Storage Temperature Range * limited by maximum junction temperature TJ,TSTG Table 2. Thermal Characteristic Parameter Symbol RthJC RthJA NCE11N65 1 62 NCE11N65F 3.8 80 Unit °C /W °C /W Thermal Resistance，Junction-to-Case（Maximum） Thermal Resistance，Junction-to-Ambient （Maximum） Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition BVDSS IDSS IDSS IGSS VGS(th) RDS(ON) gFS Clss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf ISD ISDM VSD trr Qrr VDD=380V,ID=11A, RG=6.8Ω,VGS=10V VGS=0V ID=250μA VDS=650V,VGS=0V VDS=650V,VGS=0V VGS=±30V,VDS=0V VDS=VGS,ID=250μA VGS=10V, ID=5.5A VDS = 20V, ID = 5A VDS=100V,VGS=0V, F=1.0MHz Min 650 Typ Max Unit V On/off states Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current(Tc=25℃) Zero Gate Voltage Drain Current(Tc=125℃) Gate-Body Leakage Current Gate Threshold Voltage Drain-Source On-State Resistance Dynamic Characteristics Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching times Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Source- Drain Diode Characteristics Source-drain current(Body Diode) Pulsed Source-drain current(Body Diode) Forward on voltage Reverse Recovery Time Reverse Recovery Charge 2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω TC=25°C Tj=25°C,ISD=11A,VGS=0V Tj=25°C,IF=11A,di/dt=100A/μs 1 400 6 20 60 1.3 A A V nS nC 10 5 44 5 70 9 nS nS nS nS 8.5 1350 55 4.5 43 5.5 22 60 S PF PF PF nC nC nC 1 100 ±100 2.5 3 340 3.5 380 μA μA nA V mΩ VDS=480V,ID=11A, VGS=10V Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 NCE11N65,NCE11N65F Pb-Free Product TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves) Figure1. Safe operating area for NCE11N65 Figure2. Safe operating area for NCE11N65F Figure3. Source-Drain Diode Forward Voltage Figure4. Output characteristics Figure5. Transfer characteristics Figure6. Static drain-source on resistance Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.0 NCE11N65,NCE11N65F Pb-Free Product Figure7. RDS(ON) vs Junction Temperature Figure8. BVDSS vs Junction Temperature Figure9. Maximum ID vs Junction Temperature Figure10. Gate charge waveforms Figure10. Capacitance Figure11. Transient Thermal Impedance for NCE11N65 Wuxi NCE Power Semiconductor Co., Ltd Page 4 v1.0 NCE11N65,NCE11N65F Pb-Free Product Figure11. Transient Thermal Impedance for NCE11N65F Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 NCE11N65,NCE11N65F Pb-Free Product Test circuit  1）Gate charge test circuit & Waveform 2）Switch Time Test Circuit： 3）Unclamped Inductive Switching Test Circuit & Waveforms Wuxi NCE Power Semiconductor Co., Ltd Page 6 v1.0 NCE11N65,NCE11N65F Pb-Free Product TO-220-3L Package Information Symbol A A1 b b1 c c1 D E E1 e e1 F H h L L1 V I Φ Dimensions In Millimeters Min. 4.470 2.520 0.710 1.170 0.330 1.200 10.010 8.500 12.060 2.540 TYP. 4.980 2.590 8.440 REF. 0.000 13.400 3.560 6.060 REF. 6.600 REF. 3.735 3.935 0.300 13.800 3.960 5.180 2.890 Max. 4.670 2.820 0.910 1.370 0.650 1.400 10.350 8.900 12.460 Dimensions In Inches Min. 0.176 0.099 0.028 0.046 0.013 0.047 0.394 0.335 0.475 0.100 TYP. 0.196 0.102 0.332 REF. 0.000 0.528 0.140 0.239 REF. 0.260 REF. 0.147 0.155 0.012 0.543 0.156 0.204 0.114 Max. 0.184 0.111 0.036 0.054 0.026 0.055 0.407 0.350 0.491 Wuxi NCE Power Semiconductor Co., Ltd Page 7 v1.0 NCE11N65,NCE11N65F Pb-Free Product TO-220F Package Information Symbol A A1 A2 A3 b b1 b2 c D E e F Dimensions In Millimeters Min. 4.300 1.300REF 2.800 2.500 0.500 1.100 1.500 0.500 9.960 14.800 2.540TYP. 2.700REF 3.500REF 0.800REF 0.500REF 28.000 1.700 1.900 28.400 1.900 2.100 3.200 2.900 0.750 1.350 1.750 0.750 10.360 15.200 Max. 4.700 Dimensions In Inches Min. 0.169 0.051REF 0.110 0.098 0.020 0.043 0.059 0.020 0.392 0.583 0.100TYP 0.106REF 0.138REF 0.031REF 0.020REF 1.102 0.067 0.075 1.118 0.075 0.083 0.126 0.114 0.030 0.053 0.069 0.030 0.408 0.598 Max. 0.185 Φ h1 h2 L L1 L2 Wuxi NCE Power Semiconductor Co., Ltd Page 8 v1.0 NCE11N65,NCE11N65F Pb-Free Product ATTENTION: ■ Any and all NCE products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE representative nearest you before using any NCE products described or contained herein in such applications. NCE assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE products described or contained herein. Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all NCE products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE Power Semiconductor CO.,LTD. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product that you intend to use. This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice. ■ ■ ■ ■ ■ ■ ■ ■ Wuxi NCE Power Semiconductor Co., Ltd Page 9 v1.0